 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SKIM909GD066HD Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 360 V VGE 15 V VCES 600 V VGES tpsc Tj Inverse diode IF Ts = 25 C Ts = 70 C Tj = 150 C Tj = 175 C Ts = 25 C Ts = 70 C 600 899 715 900 1800 -20 ... 20 6 -40 ... 175 670 521 600 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 1200 4320 -40 ... 175 700 -40 ... 125 AC sinus 50 Hz, t = 1 min 2500 V A A A A V s C A A A A A C A C V Conditions Values Unit SKiM(R) 93 Trench IGBT Modules SKIM909GD066HD Tj = 175 C IFnom Features * IGBT 3 Trench Gate Technology * Solderless sinter technology * VCE(sat) with positive temperature coefficient * Low inductance case * Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate * Pressure contact technology for thermal contacts and electrical contacts * High short circuit capability, self limiting to 6 x IC * Integrated temperature sensor IFRM IFSM Tj Module It(RMS) Tstg Visol Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-s) IC = 900 A VGE = 15 V chiplevel Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C VGE = 15 V Tj = 25 C Tj = 150 C 5 Tj = 25 C Tj = 150 C f = 1 MHz f = 1 MHz f = 1 MHz 55.44 3.456 1.644 7200 0.3 Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C 570 160 36 1290 90 88 0.078 1.45 1.70 0.9 0.85 0.6 0.9 5.8 0.1 1.85 2.10 1 0.9 0.9 1.3 6.5 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Typical Applications * Automotive inverter * High reliability AC inverter wind * High reliability AC inverter drives VGE=VCE, IC = 14.4 mA VGE = 0 V VCE = 600 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 300 V IC = 900 A RG on = 3 RG off = 3 di/dton = 5100 A/s di/dtoff = 9000 A/s per IGBT GD (c) by SEMIKRON Rev. 2 - 05.10.2009 1 SKIM909GD066HD Characteristics Symbol Conditions Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C rF Tj = 25 C Tj = 150 C IF = 900 A Tj = 150 C di/dtoff = 4800 A/s T = 150 C j VGE = -15 V Tj = 150 C VCC = 300 V per diode min. typ. 1.6 1.7 1 0.85 0.7 0.9 500 118 29 max. 1.8 1.9 1.1 0.95 0.8 1.1 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 900 A VGE = 0 V chip VF0 SKiM(R) 93 Trench IGBT Modules SKIM909GD066HD IRRM Qrr Err Rth(j-s) Module LCE RCC'+EE' 0.135 10 15 K/W nH m m terminal-chip to heat sink (M4) Ts = 25 C Ts = 125 C 2.5 to terminals (M6) 3 0.3 0.5 4 5 1100 Features * IGBT 3 Trench Gate Technology * Solderless sinter technology * VCE(sat) with positive temperature coefficient * Low inductance case * Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate * Pressure contact technology for thermal contacts and electrical contacts * High short circuit capability, self limiting to 6 x IC * Integrated temperature sensor Ms Mt w Nm Nm Nm g K Temperature sensor R100 B100/125 TSensor = 100 C (R25 = 5 k) R(T) = R100exp[B100/125(1/T-1/373)]; T[K]; 339 4096 Typical Applications * Automotive inverter * High reliability AC inverter wind * High reliability AC inverter drives GD 2 Rev. 2 - 05.10.2009 (c) by SEMIKRON SKIM909GD066HD Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 2 - 05.10.2009 3 SKIM909GD066HD Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 2 - 05.10.2009 (c) by SEMIKRON SKIM909GD066HD SKIM(R) 93 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 2 - 05.10.2009 5 |
Price & Availability of SKIM909GD066HD
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |