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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5871 2N5872 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO PARAMETER CONDITIONS 2N5871 Collector-base voltage 2N5872 VCEO VEBO IC PD Tj Tstg ANG INCH Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature 2N5871 2N5872 EMIC ES Open emitter Open base Open collector TC=25ae OND TOR UC VALUE -60 -80 -60 -80 -5 -7 115 150 -65~200 ae ae UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5871 2N5872 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N5871 VCEO(SUS) Collector-emitter sustaining voltage 2N5872 VCEsat VBEsat ICBO Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current 2N5871 ICEO Collector cut-off current 2N5872 IC=-5A;IB=-0.5A IC=-5A; IB=-0.5A VCB=ratedVCBO; IB=0 VCE=-30V; IB=0 -2.0 VCE=-40V; IB=0 VEB=-5V; IC=0 mA IC=-0.1A ;IB=0 -80 -1.0 -1.5 -1.0 V V mA CONDITIONS MIN -60 V TYP. MAX UNIT SYMBOL IEBO hFE fT Emitter cut-off current DC current gain Trainsistion frequency IN ANG CH EMIC ES IC=-2.5A ; VCE=-4V IC=-0.5A ; VCE=-10V DUC ON 20 4 TOR -1.0 100 mA MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5871 2N5872 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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