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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
PMD17K100
DESCRIPTION *High DC current gain *Collector-Emitter Sustaining VoltageVCEO(SUS)= -100V(Min) *Complement to type PMD16K100
APPLICATIONS *Designed for general purpose amplifier and low frequency switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL VCBO VCEO VEBO IC ICP IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
VALUE -100
UNIT V
Collector Current -Continuous Collector Current-Peak Base Current
w
ww
scs .i
-100 -5.0 -20 -40 -0.5 200 150 -65~200
.cn mi e
V V A A A
PC Tj Tstg
Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature
W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER ThermalResistance, Junction to Case MAX 0.875 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
PMD17K100
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= -100Ma; IB= 0
B
-100
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -10A; IB= -40mA
-2.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -10A; IB= -40mA
-2.8
V
VBE(on)
Base-Emitter On Voltage
IC= -10A; VCE= -3V VCE= -100V; RBE= 1K VCE= -100V; RBE= 1K, TC=150 VEB= -5V; IC= 0
-2.8 -1.0 -5.0 -2.0
V
ICER
Collector Cutoff current
mA
IEBO
Emitter Cut-off current
hFE
DC Current Gain
fT
Current-Gain--Bandwidth Product
COB
Output Capacitance
w w
scs .i w
IC= -10A; VCE= -3V
IC= -7A; VCE= -3V, f= 1kHz
.cn mi e
mA
800
20000
4
MHz
IE= 0; VCB= -10V; ftest= 1.0MHz
400
pF
isc Websitewww.iscsemi.cn
2

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Price & Availability of PMD17K100

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD17K100 07R8808	Solid State Devices Inc (SSDI)	Bjt, Pnp, -100V, To-3; Transistor Polarity:Pnp; No. Of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:200°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V; Power Dissipation:225W Rohs Compliant: Yes \|Solid State PMD17K100	1: USD4.09	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD17K100 2383-PMD17K100-ND	Solid State Inc	TRANS PNP DARL 100V 20A TO3		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD17K100 70911438	Solid State Manufacturing	NPN-SILICON 20Amp Darlington TO-3 \| Solid State Manufacturing PMD17K100	10: USD4.13 50: USD3.92 100: USD3.72 200: USD3.51	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD17K100	TDK-Lambda Corporation		176: USD2.5715 87: USD2.7177 41: USD2.9271 14: USD3.136 5: USD4.0768 1: USD6.272	215

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD17K100		Bipolar Junction Transistor, Darlington, PNP Type, TO-3	6: USD3.75 2: USD5 1: USD7.5	9
PMD17K100	TDK-Lambda Corporation	Bipolar Junction Transistor, Darlington, PNP Type, TO-3	6: USD3.75 2: USD5 1: USD7.5	8
PMD17K100	TDK-Lambda Corporation	Bipolar Junction Transistor, Darlington, PNP Type, TO-3	129: USD3.64 49: USD3.92 1: USD8.4	172

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD-17K-100	Solid State Devices Inc (SSDI)			128

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