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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT54 DESCRIPTION *High Voltage *High Speed Switching *High Power Dissipation APPLICATIONS *Designed for switching mode power supply and electronic ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCES VCER VCEO VEBO IC ICM IBM PC Tj Tstg PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage RBE100 Collector-Emitter Voltage Emitter-Base Voltage VALUE 800 UNIT V Collector Current-Continuous Collector Current-Peak Base Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range w w scs .i w 800 430 6 8 10 4 100 150 -55~150 .cn mi e V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUT54 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0, L= 125mH IC= 0.5mA; IB= 0, RBE100 B 430 V V(BR)CER Collector-Emitter Breakdown Voltage 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 2.0 1.0 2.0 45 V ICES Collector Cutoff Current VCE= 800V; VBE= 0 VCE= 800V; VBE= 0; TC=150 hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product Switching Times ;Resistive Load toff Turn-off Time w w scs .i w IC= 1A; VCE= 5V IC= 4A; VCE= 5V IC= 0.5A; VCE= 10V .cn mi e 20 5.5 mA 10 MHz 4.0 IC=4A; IB1=-IB2=1.25A; tp=20s s tf Fall Time 1.0 s isc Websitewww.iscsemi.cn |
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