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| JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6360 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 120 100 7 12 24 4 150 150 -65~200 ae ae UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ae /W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2N6360 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdwon voltage IC=0.2A ;IB=0 100 V VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=0.6A 1.4 V VCEsat-2 Collector-emitter saturation voltage IC=12A; IB=2.4A 4.0 V VBE Base-emitter on voltage IC=6A ; VCE=4V 2.2 V ICEO Collector cut-off current VCE=100V; IB=0 VCE=120V; VBE(off)=1.5V TC=150ae VEB=7V; IC=0 2.0 2.0 10.0 5.0 mA ICEX Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=6A ; VCE=4V 15 hFE-2 DC current gain IC=12A ; VCE=4V 5 fT Transition freuqency IC=1A ; VCE=4V 0.2 MHz 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6360 Fig.2 outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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