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| New Product Si2337DS Vishay Siliconix P-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 80 rDS(on) () 0.270 at VGS = - 10 V 0.303 at VGS = - 6 V ID (A)a - 2.2 - 2.1 Qg (Typ) 7 FEATURES * TrenchFET(R) Power MOSFET RoHS COMPLIANT TO-236 (SOT-23) S G 1 3 S 2 D G Top View Si2337DS (E7)* *Marking Code Ordering Information: SI2337DS-T1-E3 (Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C Continuous Drain Current (TJ = 150 C) TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 C TA = 25 C L = 0.1 mH TC = 25 C Maximum Power Dissipation TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit - 80 20 - 2.2 - 1.75 - 1.2b, c - 0.96b, c -7 - 2.1 - 0.63b, c 11 6.0 2.5 1.6 0.76b, c 0.48b, c - 50 to 150 260 W mJ A Unit V C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 sec. d. Maximum under Steady State conditions is 166 C/W. Document Number: 73533 S-71597-Rev. C, 30-Jul-07 www.vishay.com 1 t 10 sec Steady State Symbol RthJA RthJF Typical 120 40 Maximum 166 50 Unit C/W New Product Si2337DS Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = - 250 A ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 20 V VDS = - 80 V, VGS = 0 V VDS = - 80 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = - 10 V VGS = - 10 V, ID = - 1.2 A VGS = - 6 V, ID = - 1.1 A VDS = - 15 V, ID = - 1.2 A Min - 80 Typ Max Unit V - 35.8 5.45 -2 -4 100 -1 - 10 -7 0.216 0.242 4.3 0.270 0.303 mV/C V nA A A S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 500 VDS = - 40 V, VGS = 0 V, f = 1 MHz VDS = - 40 V, VGS = - 10 V, ID = - 1.2 A VDS = - 40 V, VGS = - 6 V, ID = - 1.2 A f = 1 MHz VDD = - 40 V, RL = 42 ID - 0.96 A, VGEN = - 10 V, Rg = 1 40 25 11 7 2.1 3.2 4.8 10 15 20 15 15 VDD = - 40 V, RL = 42 ID - 0.96 A, VGEN = - 6 V, Rg = 1 18 20 12 TC = 25 C IS = 0.63 A - 0.8 30 IF = 0.63 A, di/dt = 100 A/s, TJ = 25 C 45 25 5 15 23 30 23 23 27 30 18 - 2.1 -7 - 1.2 45 70 ns 17.0 11.0 nC pF A V ns nC ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73533 S-71597-Rev. C, 30-Jul-07 New Product Si2337DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 7 VGS = 10 thru 6 V 6 I D - Drain Current (A) 7 6 I D - Drain Current (A) 5 4 3 2 1 0 0.00 VGS = 5 V 5 4 3 2 TA = - 55 C TA = 25 C TA = 125 C VGS = 4 V 1 0 0.0 1.00 2.00 3.00 4.00 1.0 2.0 3.0 4.0 5.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.30 700 600 rDS(on) - On-Resistance () C - Capacitance (pF) 0.25 VGS = 6 V 500 400 300 200 Crss 100 0.10 0 1 2 3 4 5 6 7 0 0 10 Transfer Characteristics Ciss 0.20 VGS = 10 V 0.15 Coss 20 30 40 50 60 70 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID =1.2 A 8 rDS(on) - On-Resistance (Normalized) VDS = 40 V 6 VDS = 64 V 4 1.6 1.4 1.2 1.0 0.8 0.6 0 0 2 4 6 8 10 12 0.4 - 50 2.0 1.8 ID = 1.2 A Capacitance V GS - Gate-to-Source Voltage (V) VGS = 10 V VGS = 6 V 2 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge Document Number: 73533 S-71597-Rev. C, 30-Jul-07 On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si2337DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20.0 rDS(on) - Drain-to-Source On-Resistance () 0.6 ID = 1.2 A 0.5 TA = 125 C 10.0 I S - Source Current (A) TJ = 150 C 0.4 TJ = 25 C 1.0 0.3 TA = 25 C 0.2 0.1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.1 3 4 5 6 7 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 3.6 3.4 3.2 VGS(th) (V) 3.0 2.8 2.6 2.4 2.2 2.0 - 50 ID = 250 A Power (W) 16 14 12 10 8 6 4 2 On-Resistance vs. Gate-to-Source Voltage - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 1000 TJ - Temperature (C) Threshold Voltage 100 Single Pulse Power, Junction-to-Ambient 10 I D - Drain Current (A) *Limited by rDS(on) 1 ms 1 10 ms 100 ms 0.1 1s 0.01 TA = 25 C Single Pulse 10 s dc 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73533 S-71597-Rev. C, 30-Jul-07 New Product Si2337DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2.8 2.4 2.0 ID - Drain Current (A) 1.5 Power 1.6 1.2 0.8 0.5 0.4 0.0 0 25 50 75 100 125 150 0.0 25 50 75 100 125 150 2.5 2.0 1.0 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* 10 Power Derating IC - Peak Avalanche Current (A) TA 1 1.0E-6 L IA BV - V DD 10.0E-6 100.0E-6 1.0E-3 10.0E-3 TA - Time In Avalanche (sec) Single Pulse Avalanche Capability *The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73533 S-71597-Rev. C, 30-Jul-07 www.vishay.com 5 New Product Si2337DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 3. TJM - T A = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73533. www.vishay.com 6 Document Number: 73533 S-71597-Rev. C, 30-Jul-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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