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| SSM9971 Elektronische Bauelemente 5A, 60V,RDS(ON) 50m[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSM9971 provide the designer with the best combination of fast switching,low on-resistance, cost-effectiveness and ruggedized device design. SOT-223 Features * Simple Drive Requirement * Low On-Resistance REF. D Date Code 9971 G A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 G D S Millimeter Min. Max. 13TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @10V Continuous Drain Current, VGS @10V Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 60 25 5.0 3.2 30 2.7 0.02 Unit V V A A A W W / oC o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Max. Symbol Rthj-a Ratings 45 Unit o C/W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSM9971 Elektronische Bauelemente o 5A, 60V,RDS(ON) 50m[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=70 C) Static Drain-Source On-Resistance 2 o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 60 _ Typ. _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=25V VDS=60V,VGS=0 VDS=48V,VGS=0 VGS=10V, ID=5A VGS=4.5V, ID=2 .5A o 0.06 _ _ _ _ _ _ _ 1.0 _ _ _ _ 3.0 100 1 25 50 60 _ _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m [ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 32.5 4.9 8.8 9.6 10 30 5.5 1658 156 109 7 nC ID=5A VDS=48V VGS= 10V _ _ _ _ _ _ _ VDD=30V ID=5A nS VGS=10V RG=3.3[ RD=6[ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=10 V, ID=5A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time Reverse Recovery Change Symbol VSD Trr Min. _ _ Typ. _ Max. 1.2 _ _ Unit V nS nC Test Condition IS=1.6A, VGS=0V. IS=5 A, VGS=0V. dl/dt=100A/us 29.2 48 Qrr _ Notes: 1. Pulse width limited by Max. junction temperature. 300us, dutycycleO2%. 2.Pulse widthO 2 o 3.Surface mounted on 1 in copper pad of FR4 board;120 C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SSM9971 Elektronische Bauelemente 5A, 60V,RDS(ON) 50m[ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature http://www.SeCoSGmbH.com/ Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SSM9971 Elektronische Bauelemente 5A, 60V,RDS(ON) 50m[ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10ms 120 : /W DC Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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