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SS6612 High-Efficiency Synchronous Step-up DC/DC Converter with Selectable Current Limit FEATURES High efficiency (93% with VIN=2.4V, VOUT= 3.3V, IOUT=200mA) Output current up to 500mA. (VIN=2.4V, at VOUT=3.3V, CLSEL=OUT) Quiescent supply current of 20A Power-saving shutdown mode (0.1A typical). Internal synchronous rectifier (no external diode required). Selectable current limit for reduced ripple. Low-noise, anti-ringing feature. On-chip low-battery detector. Low-battery hysteresis. Space-saving package: MSOP-10 DESCRIPTION The SS6612 is a high-efficiency step-up DC/DC converter, with a start-up voltage as low as 0.8V, and an operating voltage down to 0.7V. Consuming only 20A of quiescent current, this device includes a built-in synchronous rectifier that reduces size and cost by eliminating the need for an external Schottky diode, and improves overall efficiency by minimizing losses. The switching frequency can range up to 500KHz depending on the load and input voltage. The output voltage can be easily set; by two external resistors for 1.8V to 5.5V; con- APPLICATIONS Palmtop & Notebook Computers. PDAs Wireless Phones Pocket Organizers. Digital Cameras. Hand-Held Devices with 1 to 3 Cells of NiMH/NiCd Batteries. necting FB to OUT to get 3.3V; or connecting to GND to get 5.0V. For additional design flexibility, the peak current of the internal switch is selectable (0.65A or 1.0A). The SS6612 also features a circuit that eliminates noise caused by inductor ringing. TYPICAL APPLICATION CIRCUIT VIN + 47F OFF SHDN CLSEL SS6612 LBI REF 0.1F GND LBO FB 200 BATT ON LX OUT Output 3.3V, 5.0V or Adj. (1.8V to + 5.5V) up to 300mA 47F Low-battery Detect Out 22H Selectable Current Limit (1.0A or 0.65A) Low Battery Detection Rev.2.02 12/06/2003 www.SiliconStandard.com 1 of 16 SS6612 ORDERING INFORMATION SS6612CXXX PIN CONFIGURATION MSOP-10 FB 1 Packing TR: Tape and reel Package type O: MSOP-10 TOP VIEW 10 OUT LBI 2 LBO 3 CLSEL 4 REF 5 9 LX 8 GND 7 BATT 6 SHDN Example: SS6612COTR in MSOP-10 package supplied on tape and reel. ABSOLUTE MAXIMUM RATINGS Supply Voltage (OUT to GND) Switch Voltage (LX to GND) Battery Voltage (BATT to GND) SHDN , LBO to GND 8.0V VOUT+ 0.3V 6.0V 6.0V VOUT+0.3V -1.5A to +1.5A -1.5A to +1.5A -40C ~ +85C -65C ~150C LBI, REF, FB, CLSEL to GND Switch Current (LX) Output Current (OUT) Operating Temperature Range Storage Temperature Range TEST CIRCUIT Refer to the typical application circuit. Rev.2.02 12/06/2003 www.SiliconStandard.com 2 of 16 SS6612 ELECTRICAL CHARACTERISTICS (VIN = 2.0V, VOUT = 3.3V (FB = VOUT), RL = , TA = 25C, unless otherwise specified.) PARAMETER Minimum Input Voltage Operating Voltage Start-Up Voltage Start-Up Voltage Temp. Coeff. Output Voltage Range Output Voltage TEST CONDITIONS MIN. TYP. 0.7 MAX. UNIT V 1.1 RL=3k (Note1) 0.8 -2 VIN V V mV/C 5.5 3.43 V Steady State Output Current (Note 2) (VOUT =3.3V) CLSEL=GND CLSEL=OUT mA FB=GND (VOUT 230 160 1.23 0.024 1.261 V mV/C 30 10 1.261 0.6 1.25 A 0.85 1 35 1 A A A % 85 mV mV/V V =5.0V) CLSEL=GND Reference Voltage Reference Voltage Temp. Coeff. Reference Load Regulation Reference Line Regulation FB, LBI Input Threshold IREF= 0 IREF = 0 to 100A VOUT = 1.8V to 5.5V 1.199 10 5 1.23 0.3 0.80 0.50 1.0 0.65 0.05 20 0.1 90 Internal switch On-Resistance ILX = 100mA CLSEL=OUT LX Switch Current Limit CLSEL=GND LX Leakage Current Operating Current into OUT (Note 3) Shutdown Current into OUT Efficiency VFB = 1.4V , VOUT = 3.3V VLX=0V~4V; VOUT=4V SHDN = GND VOUT= 3.3V ,ILOAD = 200mA VOUT = 2V ,ILOAD = 1mA Rev.2.02 12/06/2003 www.SiliconStandard.com 3 of 16 SS6612 ELECTRICAL CHARACTERISTICS PARAMETER LX Switch On-Time LX Switch Off-Time FB Input Current LBI Input Current CLSEL Input Current (Continued) TEST CONDITIONS VFB =1V , VOUT = 3.3V VFB =1V , VOUT = 3.3V VFB = 1.4V VLBI = 1.4V CLSEL = OUT MIN. 2 0.6 TYP. 4 0.9 0.03 1 1.4 MAX. 7 1.4 50 50 3 UNIT s s nA nA A SHDN Input Current LBO Low Output Voltage LBO Off Leakage Current LBI Hystereisis Damping Switch Resistance SHDN Input Voltage V SHDN = 0 or VOUT VLBI = 0, ISINK = 1mA V LBO = 5.5V, VLBI = 5.5V 0.07 0.2 0.07 50 50 0.4 1 nA A mV 100 0.2VOUT V VBATT = 2V VIL VIH VIL 0.8VOUT 50 0.2VOUT V 0.8VOUT CLSEL Input Voltage VIH Note 1: Start-up voltage operation is guaranteed without the addition of an external Schottky diode between the input and output. Note 2: Steady-state output current indicates that the device maintains output voltage regulation under load. Note 3: Device is bootstrapped (power to the IC comes from OUT). This correlates directly with the actual battery supply. Rev.2.02 12/06/2003 www.SiliconStandard.com 4 of 16 SS6612 TYPICAL PERFORMANCE CHARACTERISTICS 160 140 0.4 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.5 Input Battery Current (A) Shutdown Current (A) VOUT=5V (FB=GND) 0.3 0.2 0.1 VOUT=3.3V (FB=OUT) 0.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Fig. 1 1.8 1.6 Input battery voltage (V) No-Load Battery Current vs. Input Battery CCM/DCM Boundary Output Current (mA) Supply Voltage (V) Fig. 2 400 350 300 250 200 150 100 50 0 0.5 Shutdown Current vs. Supply Voltage Start-Up Voltage (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.01 VOUT=5V (FB=GND) L=22H CIN=100F COUT=100F VOUT=3.3V (FB=OUT) VOUT=3.3V (FB=OUT) VOUT=5.0V (FB=GND) 0.1 1 10 100 Output Current (mA) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Input Voltage (V) Fig. 3 100 90 80 Start-Up Voltage vs. Output Current 220 200 180 Fig. 4 Turning Point between CCM & DCM CLSEL=OUT (ILIMIT =1A) Ripple Voltage (mV) Efficiency (%) 70 60 50 40 30 20 10 0 0.01 0.1 VIN=1.2V VIN=2.4V VIN=3.6V VOUT=5V (FB=GND) CLSEL=OUT (ILIMIT =1A) 1 10 100 1000 160 140 120 100 80 60 40 20 0 0 50 100 150 200 250 300 350 400 450 500 550 600 650 VIN=3.6V VIN=2.4V VIN=1.2V VOUT=5.0V L=22H CIN=47F COUT=47F Output Current (mA) Output Current (mA) Fig. 5 Efficiency vs. Output Current (ref. to Fig.35) Fig. 6 Ripple Voltage (ref. to Fig.35) Rev.2.02 12/06/2003 www.SiliconStandard.com 5 of 16 SS6612 TYPICAL PERFORMANCE CHARACTERISTICS 240 (Continued) 100 90 80 CLSEL=OUT (ILIMIT =1A) 200 Ripple Voltage (mV) VIN=3.6V VIN=2.4V VIN=1.2V 160 Efficiency (%) VIN=3.6V VIN=2.4V VOUT=5.0V L=22H CIN=100F COUT=100F 400 500 600 700 800 70 60 50 40 30 20 10 0 0.01 0.1 120 80 VOUT=5V (FB=GND) CLSEL=GND (ILIMIT =0.65A) 1 10 100 1000 40 VIN=1.2V 0 0 100 200 300 Output Current (mA) Output Current (mA) Fig. 7 160 Ripple Voltage (ref. to Fig.35) CLSEL=GND (ILIMIT =0.65A) Fig. 8 120 Efficiency vs. Output Current (ref. to Fig.35) CLSEL=GND (ILIMIT =0.65A) 100 140 120 100 80 60 40 VIN=3.6V Ripple Voltage (mV) VIN=3.6V Ripple Voltage (mV) 80 60 VIN=2.4V VIN=1.2V 20 0 0 50 100 150 200 250 300 350 VOUT=5.0V L=22H CIN=47F COUT=47F 400 450 500 550 40 VIN=2.4V VIN=1.2V 0 100 200 300 20 VOUT=5.0V L=22H CIN=100F COUT=100F 400 500 600 0 Output Current (mA) Output Current (mA) Fig. 9 100 90 80 70 Ripple Voltage (ref. to Fig.35) 260 240 220 Fig. 10 Ripple Voltage (ref. to Fig.35) CLSEL=OUT (ILIMIT =1A) Ripple Voltage (mV) VIN=1.2V VIN=2.4V 200 180 160 140 120 100 80 60 40 20 0 Efficiency (%) 60 50 40 30 20 10 0 0.01 0.1 1 VIN=2.4V VOUT=3.3V L=22H CIN=47F COUT=47F 300 350 400 450 500 550 600 VOUT=3.3V (FB=OUT) CLSEL=OUT (ILIMIT =1A) 10 100 1000 VIN=1.2V 0 50 100 150 200 250 Output Current (mA) Output Current (mA) Fig. 11 Efficiency vs. Output Current (ref. to Fig.34) Fig. 12 Ripple Voltage (ref. to Fig.34) Rev.2.02 12/06/2003 www.SiliconStandard.com 6 of 16 SS6612 TYPICAL PERFORMANCE CHARACTERISTICS 100 140 120 (Continued) 90 80 CLSEL=OUT (ILIMIT =1A) Ripple Voltage (mV) Efficiency (%) 100 80 60 40 20 0 0 70 60 50 40 30 20 10 VIN=1.2V VIN=2.4V VIN=1.2V VIN=2.4V VOUT=3.3V CIN=100F COUT=100F 50 100 150 200 250 300 350 400 450 500 550 VOUT=3.3V (FB=OUT) CLSEL=GND (ILIMIT =0.65A) 0 0.01 1 10 100 1000 Output Current (mA) Output Current (mA) Fig. 13 140 Ripple Voltage (ref. to Fig.34) Fig. 14 120 Efficiency vs. Output Current (ref. to Fig.34) CLSEL=GND (ILIMIT =0.65A) 120 110 100 CLSEL=GND (ILIMIT =0.65A) Ripple Voltage (mV) 100 Ripple Voltage (mV) 90 80 70 60 50 40 30 20 10 0 80 VIN=2.4V 60 40 VIN=2.4V VOUT=3.3V L=22H CIN=100F COUT=100F 200 250 300 350 400 450 500 VIN=1.2V 20 0 0 50 100 150 200 250 300 VOUT=3.3V L=22H CIN=47F COUT=47F 350 400 450 500 VIN=1.2V 0 50 100 150 Output Current (mA) Output Current (mA) Fig. 15 1.26 Ripple Voltage (ref. to Fig.34) 0.50 0.45 Fig. 16 Ripple Voltage (ref. to Fig.34) 1.25 P-Channel 0.40 Reference Voltage (V) 1.24 Resistance () 0.35 0.30 0.25 0.20 0.15 1.23 N-Channel 1.22 1.21 0.10 IREF=0 1.20 -40 -20 0 20 40 60 80 0.05 0.00 -60 VOUT=3.3V ILX=100mA -40 -20 0 20 40 60 80 100 Temperature (C) Temperature (C) Fig. 17 Reference Voltage vs. Temperature Fig. 18 Switch Resistance vs. Temperature Rev.2.02 12/06/2003 www.SiliconStandard.com 7 of 16 SS6612 TYPICAL PERFORMANCE CHARACTERISTICS 800 900 (Continued) Maximum Output Current (mA) Maximum Output Current (mA) 700 600 500 400 300 200 100 0 800 700 600 500 400 300 200 100 0 VOUT=3.3V (FB=OUT) CLSEL=OUT (ILIMIT=1A) VOUT=5V (FB=GND) CLSEL=OUT (ILIMIT=1A) CLSEL=GND (ILIMIT=0.65A) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 CLSEL=GND (ILIMIT=0.65A) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Fig 19 . 1.2 Input Voltage (V) Maximum Output Current vs. Input Voltage Fig. 20 160 Input Voltage (V) Maximum Output Current vs. Input Voltage Switching Frequency fosc (kHz) CLSEL=OUT (ILIMIT=1A) 1.0 140 120 100 80 60 40 20 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VOUT=5.0V 0.8 ILIM (A) 0.6 CLSEL=GND (ILIMIT=0.65A) 0.4 VOUT=3.3V 0.2 IOUT=100mA 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 21 220 Output Voltage (V) Inductor Current vs. Output Voltage Supply Voltage (V) Fig. 22 Switching Frequency vs. Supply Voltage Switching Frequency fosc (kHz) 200 180 160 140 120 100 80 60 40 20 0 1 10 VIN=1.2V VOUT=3.3V VIN=2.4V VOUT=3.3V W /o Anti-Ringing V IN =2.4V V OUT =3.3V VIN=2.4V VOUT=5V VIN=3.6V VOUT=5V 100 1000 Output Current (mA) Fig. 23 Switching Frequency vs. Output Current Fig. 24 Without Anti-Ringing Function Rev.2.02 12/06/2003 www.SiliconStandard.com 8 of 16 SS6612 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) LX Pin W aveform W i t h A n t i - Ringing V IN =2.4V V OUT =3.3V V IN =2.4V V O U T =3.3V Loading=200m A Inductor C urrent V O UT A C C ouple Fig. 25 W ith Anti-Ringing Function F ig. 26 H eavy Load W aveform Loading: 1m A 200m A VIN V IN =2.4V V O U T =3.3V V O U T : A C C ouple VIN=2.0V~3.0V VOUT=3.3V, IOUT=100mA VOUT F ig. 27 Load Transient R esponse Fig. 28 Line Transient Response V SHDN V SHDN VOUT VOUT VOUT=3.3V C IN=COUT=47F VOUT=3.3V CIN=COUT=100F Fig. 29 Exiting Shutdown Fig. 30 Exiting Shutdown Rev.2.02 12/06/2003 www.SiliconStandard.com 9 of 16 SS6612 TYPICAL PERFORMANCE CHARACTERISTICS V SHDN (Continued) V SHDN VOUT VOUT=5.0V CIN=COUT=47F V OUT V OUT =5.0V C IN =C OUT =100F Fig. 31 Exiting Shutdown Fig. 32 Exiting Shutdown BLOCK DIAGRAM OUT SHDN CLSEL + OUT 0.1F R1 200 L 47H + Minimum Off-Time One Shot Q1 Q3 Damping Switch BATT LX C3 47F VIN Q2 F/ F S R One Shot Maximum On-Time Q C1 47F GND + Mirror + LBO REF FB + LBI Reference Voltage C4 0.1F Rev.2.02 12/06/2003 www.SiliconStandard.com 10 of 16 SS6612 PIN DESCRIPTIONS PIN 1: FBConnected to OUT to get +3.3V output, connected to GND to get +5.0V output, or using a resistor network to set output voltage ranging from +1.8V to +5.5V. PIN 2: LBILow-battery comparator input internally set at +1.23V to trip. PIN 3: LBO- Open-drain low battery comparator output. Output is low when VLBI is <1.23V. LBO is high impedance during shutdown. PIN 4: CLSEL- Current-limit select input. CLSEL= OUT sets the current limit to 1.0A. CLSEL=GND sets the current limit to 0.65A. PIN 5: REF1.23V reference voltage. Bypass with a 0.1F capacitor. PIN 6: SHDN- Shutdown input. High=operating, low=shutdown. PIN 7: BATT- Battery input and damping switch connection. If damping switch is unused, leave BATT unconnected. PIN 8: GND- Ground. PIN 9: LXN-channel and P-channel power MOSFET drain. PIN 10: OUT- Power output. OUT provides bootstrap power to the IC. APPLICATION INFORMATION Overview The SS6612 is a high-efficiency, step-up DC/DC converter, featuring a built-in synchronous rectifier, which reduces size and cost by eliminating the need for an external Schottky diode. The start-up voltage of the SS6612 is as low as 0.8V and it operates with an input voltage down to 0.7V. Quiescent supply current is only 20A. In addition, the SS6612 features a circuit that eliminates inductor ringing to reduce noise. The internal P-MOSFET on-resistance is typically 0.3 to improve overall efficiency by minimizing AC losses. The output voltage can be easily set; by two external resistors for 1.8V to 5.5V; connecting FB to OUT to get 3.3V; or connecting to GND to get 5.0V. The CLSEL pin offers a selectable current limit (1.0A or 0.65A). The lower current limit allows the use of a physically smaller inductor in spacesensitive applications. BLOCK DIAGRAM) with ultra-low quiescent current. The peak current of the internal N-MOSFET power switch is selectable. The switch frequency depends on either loading conditions or input voltage, and can range up to 500KHz. It is governed by a pair of oneshots that set a minimum off-time (1s ) and a maximum on-time (4s ). Synchronous Rectification Using the internal synchronous rectifier eliminates the need for an external Schottky diode, reducing the cost and board space. During the cycle of offtime, the P-MOSFET turns on and shuts the NMOSFET off. Due to the low turn-on resistance of the MOSFET, the synchronous rectifier significantly improves efficiency without an additional external Schottky diode. Thus, the conversion efficiency can be as high as 93%. PFM Control Scheme A key feature of the SS6612 is a unique minimumoff-time, constant-on-time, current-limited, pulsefrequency-modulation (PFM) control scheme (see Reference Voltage The reference voltage (REF) is nominally 1.23V for excellent T.C. performance. In addition, the REF pin can source up to 100A to an external circuit with good load Rev.2.02 12/06/2003 www.SiliconStandard.com 11 of 16 SS6612 regulation (<10mV). A bypass capacitor of 0.1F is required for proper operation and good performance. Low-Battery Detection The SS6612 contains an on-chip comparator with 50mV internal hysteresis (REF, REF+50mV) for low battery detection. If the voltage at LBI falls below the internal reference voltage, LBO (an open-drain output) sinks current to GND. Shutdown The whole circuit is shutdown when V SHDN is low. In shutdown mode, the current can flow from the battery to the output due to the body diode of the P-MOSFET. VOUT falls to approximately (Vin - 0.6V) and LX remains high impedance. The capacitance and load at OUT determine the rate at which VOUT decays. Shutdown can be pulled as high as 6V, regardless of the voltage at OUT. Component Selection 1. Inductor Selection An inductor value of 22H performs well in most applications. The SS6612 also works with inductors in the 10H to 47H range. An inductor with higher peak inductor current creates a higher output voltage ripple (IPEAKxoutput filter capacitor ESR). The inductor's DC resistance significantly affects efficiency. We can calculate the maximum output current as follows: VIN VOUT - VIN IOUT(MAX ) = ILIM - t OFF VOUT 2xL ........................................................................(2) Current Limit Select Pin The SS6612 allows a selectable inductor current limit of either 1.0A or 0.65A, allowing the flexibility to design for higher current or smaller applications. CLSEL draws 1.4A when connecting to OUT. BATT/Damping Switch The SS6612 is designed with an internal damping switch (Fig.33) to reduce ringing at LX. The damping switch supplies a path to quickly dissipate the energy stored in the inductor and reduces the ringing at LX. Damping LX ringing does not reduce VOUT ripple, but does reduce EMI. R1=200 works well for most applications while reducing efficiency by only 1%. Larger R1 values provide less damping, but less impact on efficiency. In principle, a lower value of R1 is needed to fully damp LX when VOUT /VIN ratio is high. where IOUT(MAX)=maximum output current in amps VIN=input voltage L=inductor value in H =efficiency (typically 0.9) tOFF=LX switch' off-time in s ILIM=1.0A or 0.65A 2. Capacitor Selection Selecting the Output Voltage VOUT can be simply set to 3.3V/5.0V by connecting the FB pin to OUT/GND due to the use of an internal resistor divider in the IC (Fig.34 and Fig.35). In order to adjust the output voltage, a resistor divider is connected to VOUT, FB, GND (Fig.36). Vout can be calculated by the following equation: R5 = R6 [(VOUT / VREF )-1] .....................................(1) where V REF =1.23V and VOUT ranges from 1.8V to 5.5V. The recommended R6 is 240k. The output ripple voltage is related to the peak inductor current and the output capacitor ESR. Besides output ripple voltage, the output ripple current may also be of concern. A filter capacitor with low ESR is helpful to the efficiency and the steady state output current of the SS6612. Therefore a NIPPON MCM series tantalum capacitor of 100F/6V is recommended. A smaller capacitor (down to 47F with higher ESR) is acceptable for light loads or in applications that can tolerate higher output ripple. Rev.2.02 12/06/2003 www.SiliconStandard.com 12 of 16 SS6612 3. PCB Layout and Grounding and efficiency, and minimize output ripple voltage, use a ground plane and solder the IC's GND directly to the ground plane. Fig.37 to 39 are the recommended layout diagrams. Since the SS6612's switching frequency can range up to 500kHz, the SS6612 can be very sensitive. Careful printed circuit layout is important for minimizing ground bounce and noise. The OUT pin should be as clear as possible, and the GND pin should be placed close to the ground plane. Keep the IC's GND pin and the ground leads of the input and output filter capacitors less than 0.2in (5mm) apart. In addition, keep all connections to the FB and LX pins as short as possible. In particular, when using external feedback resistors, locate them as close to the FB as possible. To maximize output power Ripple Voltage Reduction Two or three parallel output capacitors can significantly improve the output ripple voltage of the SS6612. The addition of an extra input capacitor results in a stable output voltage. Fig.40 shows the application circuit with the above features. Fig. 41 to 48 show the performance of Fig.40. APPLICATION EXAMPLES VOUT R1 200 BATT R1 200 VIN L1 22H VIN L 22H LX OUT LBI R4 0.1F C4 REF LBO GND FB LOW BATTERY OUTPUT CLSEL SHDN R2 100K C2 0.1F C3 47F VOUT C1 47F OUT Q1 DAMPING SWITCH Q3 BATT R3 LX Q2 SS6612 GND SS6612 L: TDK SLF7045T-22OMR90 C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER Fig.33 Simplified Damping Switch Diagram VIN R1 200 BATT R3 LBI R4 0.1F C4 GND SS6612 L: TDK SLF7045T-22OMR90 C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER REF LBO FB LOW BATTERY OUTPUT L 22H LX OUT CLSEL SHDN R2 100K 0.1F C4 Fig.34 VOUT = 3.3V Application Circuit. VIN R1 200 BATT R3 CLSEL LBI R4 REF LBO GND SS6612 FB R6 LOW BATTERY OUTPUT SHDN 100K R2 L 22H LX VOUT OUT C1 47F VOUT C1 47F C2 0.1F R5 C2 0.1F C3 47F C3 47F L: TDK SLF7045T-22OMR90 C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER V OUT=V REF*(1+R5/R6) Fig.35 VOUT = 5.0V Application Circuit. Fig.36 An Adjustable Output Application Circuit Rev.2.02 12/06/2003 www.SiliconStandard.com 13 of 16 SS6612 IIIIIIIIIIIIIIIIII9915H,J IIIIIIIIIIIIIIIIII9915H,J IIIIIIIIIIIIIIIIII9915H,J IIIIIIIIIIIIIIIIII9915H,J IIIIIIIIIIIIIIIIII9915H,J IIIIIIIIIIIIIIIIII9915H,J IIIIIIIIIIIIIIIIII9915H,J IIIIIIIIIIIIIIIIII9915H,J IIIIIIIIIIIIIIIIII9915H,J Fig.37 Top layer Fig.38 Bottom layer Fig.39 Placement VIN Connect to OUT for 3.3V output voltage Connect to GND for 5.0V output voltage Open for adjustable output voltage; VOUT=1.23(1+R5/R6) JU1 R5 VOUT R6 1 2 VIN L1 + 22H VIN C1 6V/100F + C2 6V/100uF R3 VOUT R2 100K FB LBI OUT 10 LX 9 GND 8 R1 200 VIN JU3 D1 is Optional VOUT + + + R4 3 4 LBO CLSEL BATT 7 REF SS6612 SHDN 6 JU2 Connect to OUT for 1.0A limit Connect to GND for 0.8A limit 5 C4 1F C5 C6 C7 6V/100F 6V/100F 6V/100F C3 0.1F L1: TDK SLF7045T-22OMR90 C1~C2, C5~7: NIPPON Tantalum Capacitor 6MCM107MCTER Connect to GND for shutdown Connect to VOUT for normal Fig.40 SS6612 application circuit with small ripple voltage 100 95 90 85 80 60 VIN=3.6V 50 CLSEL=OUT (ILIMIT =1A) Ripple Voltage (mV) VIN=3.6V 40 Efficiency (%) 75 70 65 60 55 50 45 40 35 30 0.01 0.1 VIN=2.4V 30 CLSEL=OUT (ILIMIT =1A) VOUT=5.0V VIN=1.2V 1 10 20 VIN=2.4V VIN=1.2V VOUT=5.0V L=22H 0 100 200 300 400 500 600 700 10 L=22H 0 100 1000 Output Current (mA) Output Current (mA) Fig. 41 Efficiency (ref. to Fig.40) Fig. 42 Ripple Voltage (ref. to Fig.40) Rev.2.02 12/06/2003 www.SiliconStandard.com 14 of 16 SS6612 60 95 90 85 80 60 VIN=3.6V 50 CLSEL=GND (ILIMIT =0.65A) Ripple Voltage (mV) VIN=3.6V 40 Efficiency (%) 75 70 65 60 55 50 45 40 35 30 25 0.01 VIN=2.4V 30 CLSEL=GND (ILIMIT =0.65A) VIN=1.2V VOUT=5.0V 20 VIN=2.4V 10 VOUT=5.0V L=22H L=22H 0 0.1 1 10 100 1000 0 VIN=1.2V 100 200 300 400 500 Output Current (mA) Output Current (mA) Fig. 43 100 95 90 Efficiency (ref. to Fig.40) 50 Fig. 44 Ripple Voltage (ref. to Fig.40) VIN=2.4V Ripple Voltage (mV) 45 40 35 30 25 20 15 10 5 0 CLSEL=OUT (ILIMIT =1A) 85 Efficiency (%) 80 75 70 65 60 55 50 45 40 0.01 0.1 1 10 VIN=1.2V VIN=2.4V VOUT=3.3V L=22H 0 50 100 150 200 250 300 350 400 450 500 550 600 CLSEL=OUT (ILIMIT =1A) VOUT=3.3V L=22H 100 1000 VIN=1.2V Output Current (mA) Output Current (mA) Fig. 45 100 95 90 Efficiency (ref. to Fig.40) 35 Fig. 46 Ripple Voltage (ref. to Fig.40) CLSEL=GND (ILIMIT =0.65A) 30 Ripple Voltage (mV) 85 25 Efficiency (%) 80 75 70 65 60 55 50 45 40 0.01 0.1 VIN=2.4V 20 VIN=2.4V 15 CLSEL=GND (ILIMIT =0.65A) VOUT=3.3V VIN=1.2V 1 10 10 VIN=1.2V 5 VOUT=3.3V L=22H L=22H 100 1000 0 0 50 100 150 200 250 300 350 400 Output Current (mA) Output Current (mA) Fig. 47 Efficiency (ref. to Fig.40) Fig. 48 Ripple Voltage (ref. to Fig.40) Rev.2.02 12/06/2003 www.SiliconStandard.com 15 of 16 SS6612 PHYSICAL DIMENSIONS 10 LEAD MSOP (unit: mm) D SYMBOL A1 A2 E E1 MIN -0.76 0.15 0.13 2.90 4.80 2.90 0.50 0.40 MAX 0.20 0.97 0.30 0.23 3.10 5.00 3.10 0.66 b C D E e A2 C A1 E1 e L L b Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. Rev.2.02 12/06/2003 www.SiliconStandard.com 16 of 16 |
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