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LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
FOUR DIGIT LED DISPLAY (0.39 Inch)
LFD415/63-XX/KP126
DATA SHEET
DOC. NO REV. DATE
: :
QW0905- LFD415/63-XX/KP126 A
: 17 - May. - 2005
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD415/63-XX/KP126 Page 1/7
Package Dimensions
40.18(1.582")
7.0 (0.276")
DP1
10.0 (0.39")
DIG.1
DIG.2
DIG.3
DP3
DIG.4
DP2
12.8 (0.504")
10.16 (0.4")
0.3
LFD415/63-XX/KP126 LIGITEK
A F E
12.60.5 0.5
G
B C
D
DP
PIN NO.1
2.54X7=17.78 (0.7")
Note : 1.All dimension are in millimeters and (lnch) tolerance is O 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD415/63-XX/KP126 Page 2/7
Internal Circuit Diagram
LFD4153-XX/KP126
14 16 13 3 5 11 15 7
A B DIG. C D 1 E F G DP A B DIG. C D 2 E F G DP DP1
LFD4163-XX/KP126
14 16 13 3 5 11 15 7
A B DIG. C D 1 E F G DP A B DIG. C D 2 E F G DP DP1
1
1
2
2
12
4
12 3
4
DP2 A B DIG. C D 6 E F G DP
DP2 A B DIG. C D 6 E F G DP
3
9
DP3
A B DIG. C D 8 E F G DP
10
9 4
DP3 10 A B DIG. C D 8 E F G DP
4
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD415/63-XX/KP126 Page 3/7
Electrical Connection
PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 LFD4153-XX/KP126 Common Cathode Dig.1 Common Cathode Dig.2 Anode D Cathode DP1,DP2 Anode E Common Cathode Dig.3 Anode DP Common Cathode Dig.4 Anode DP3 Cathode DP3 Anode F Anode DP1,DP2 Anode C Anode A Anode G Anode B PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 LFD4163-XX/KP126 Common Anode Dig.1 Common Anode Dig.2 Cathode D Anode DP1,DP2 Cathode E Common Anode Dig.3 Cathode DP Common Anode Dig.4 Cathode DP3 Anode DP3 Catode F Cathode DP1,DP2 Cathode C Cathode A Cathode G Cathode B
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD415/63-XX/KP126 Page 4/7
Absolute Maximum Ratings at Ta=25 J
Ratings Parameter Symbol Y Forward Current Per Chip Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Reverse Current Per Any Chip Operating Temperature Storage Temperature IF IFP 20 80 mA mA UNIT
PD Ir Topr Tstg
60 10 -25 ~ +85 -25 ~ +85
mW
g A J J
Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 J
Part Selection And Application Information(Ratings at 25J )
Electrical Vf(v) Iv(mcd) Min. Typ. Max. Min. Typ.
PART NO
Common Cathode Material Emitted or Anode CHIP
Common Cathode
GaAsP/GaP
f P (nm)
f
(nm)
IV-M
LFD4153-XX/KP126
Yellow Common Anode
585
35
1.7
2.1 2.6 1.0 2.35
2:1
LFD4163-XX/KP126
Note : 1.The forward voltage data did not including O 0.1V testing tolerance. 2. The luminous intensity data did not including O 15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD415/63-XX/KP126 Page 5/7
Test Condition For Each Parameter
Parameter Forward Voltage Per Chip Luminous Intensity Per Chip Peak Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio
Symbol Vf Iv
Unit volt mcd nm nm
Test Condition If=20mA If=10mA If=20mA If=20mA Vr=5V
f p f
Ir IV-M
g A
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD415/63-XX/KP126 Page6/7
Typical Electro-Optical Characteristics Curve
Y CHIP
Fig.1 Forward current vs. Forward Voltage
1000
Fig.2 Relative Intensity vs. Forward Current
3.0
Forward Current(mA)
100 10 1.0
Relative Intensity Normalize @20mA
1.0
2.5 2.0 1.5 1.0 0.5 0.0
0.1 2.0 3.0 4.0 5.0
1.0
10
100
1000
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
1.2
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
Forward Voltage@20mA Normalize @25J
Relative Intensity@20mA Normalize @25J
-40 -20 0 20 40 60
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
1.1
1.0 0.9 0.8 80 100
Ambient Temperature(J )
Ambient Temperature(J )
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity@20mA
1.0
0.5
0.0 500 550 600 650 700
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD415/63-XX/KP126 Page 7/7
Reliability Test:
Test Item
Test Condition
1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs)
Description
This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed.
Reference Standard
MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1
Operating Life Test
High Temperature Storage Test
1.Ta=105 JO 5J 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours.
MIL-STD-883:1008 JIS C 7021: B-10
Low Temperature Storage Test
1.Ta=-40JO 5J 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of low temperature for hours.
JIS C 7021: B-12
High Temperature High Humidity Test
1.Ta=65JO 5J 2.RH=90 %~95% 3.t=240hrs O 2hrs
The purpose of this test is the resistance of the device under tropical for hous.
MIL-STD-202:103B JIS C 7021: B-11
Thermal Shock Test
1.Ta=105 J O 5J &-40JO (10min) (10min) 2.total 10 cycles
5J
The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire.
MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011
Solder Resistance Test
1.T.Sol=260 J O 5J 2.Dwell time= 10 O 1sec.
MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1
Solderability Test
1.T.Sol=230 J O 5J 2.Dwell time=5 O 1sec
This test intended to see soldering well performed or not.
MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2

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