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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM2362PT CURRENT 3 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 1.7~2.1 (2) (3) SC-59/SOT-346 0.95 2.7~3.1 0.95 (1) CONSTRUCTION * N-Channel Enhancement 0.3~0.51 1.2~1.9 0.89~1.3 0.085~0.2 0.3~0.6 2.1~2.95 (1) G CIRCUIT D (3) 0~0.1 S (2) Dimensions in millimeters SC-59/SOT-346 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM2362PT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 60 V V 20 3.0 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 12.0 1250 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 100 C/W 2006-08 RATING CHARACTERISTIC CURVES ( CHM2362PT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 60 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 60 1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A VGS=10V, ID=3A 1.0 61 77 3.0 80 V RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=2.4A 100 m Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0 MHz 675 75 45 pF SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q gd ton tr toff tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=30V, ID=3A VGS=10V V DD= 30V ID = 1A , VGS = 10 V RGEN= 6 12.7 1.6 2.4 10.6 3.4 30 3.4 16.8 nC 21.2 6.8 60 6.8 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) (Note 2) 3.0 1.2 A V Drain-Source Diode Forward Voltage IS = 3.0A , VGS = 0 V RATING CHARACTERISTIC CURVES ( CHM2362PT ) Typical Electrical Characteristics Figure 1. Output Characteristics 25 7.5 Figure 2. Transfer Characteristics V G S =1 0 , 8 , 6 , 5 V 20 6 I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 15 TJ=25C 4.5 VG S =4 V 10 3 5 TJ=125C 1.5 TJ=-55C 0 0 1.0 4.0 2.0 3.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 5.0 0 0 2.0 1.0 VGS , GATE-TO-SOURCE VOLTAGE (V) 3.0 Figure 3. Gate Charge 10 VDS=30V ID=3A 2.2 Figure 4. On-Resistance Variation with Temperature VGS=10V ID=3A 1.9 VGS , GATE TO SOURCE VOLTAGE (V) 8 DRAIN-SOURCE ON-RESISTANCE R DS(on) , NO RMALIZED 1.6 6 1.3 4 1.0 2 0.7 0 0 5 10 Qg , TOTAL GATE CHARGE (nC) 15 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (C) 150 200 Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 VDS=VGS ID=250uA Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C) 125 150 |
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