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Shantou Huashan Electronic Devices Co.,Ltd.
H8050
NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION.
ABSOLUTE MAXIMUM RATINGSTa=25
T stg ----Storage Temperature.............................. -55~150 Tj----Juncttion Temperature.......................................150 P C ----Collector Dissipation.......................................1W VCBO----Collector-Base Voltage....................................40V VCEO----Collector-Emitter Voltage.................................25V V EB O ----Emitter-Base Voltage....................................6V I C ----Collector Current.............................................1.5A 1EmitterE 2BaseB 3Collector C TO-92
ELECTRICAL CHARACTERISTICSTa=25
Symbol Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base- Emitter Voltage Base- Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Output Capacacitance Current Gain-Bandwidth Product Min Typ Max Unit Test Conditions
ICBO IEBO HFE VBE VBE(sat) BVCBO BVCEO BVEBO Cob fT
0.1 0.1 85 40 1 0.5 1.2 40 25 6 9.0 100 500
A A
VCB=35V, IE=0 VEB=6V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=800mA
V V V V V V pF MHz
VCE=1V, IC=10mA IC=800mA, IB=80mA IC=800mA,IB=80mA IC=100AIE=0 IC=2mAIB=0 IE=100AIC=0 VCB=10V,IE=0f=1MHz VCE=10V, IC=50mA
VCE(sat Collector- Emitter Saturation Voltage
hFE Classification
B
C 120--200
D 160--300
E 270--500
85--160
Shantou Huashan Electronic Devices Co.,Ltd.
H8050

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