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| IDP30E120 Fast Switching Diode Features * 1200 V diode technology * Fast recovery * Soft switching * Low reverse recovery charge * Low forward voltage * Easy paralleling * Pb-free lead plating; RoHS compliant * Halogen-free according to IEC61249-2-21 * Qualified according to JEDEC for target applications Type IDP30E120 Package PG-TO220-2 Ordering Code - Product Summary VRRM IF VF T jmax 1200 30 1.65 150 PG-TO220-2 V A V C Marking D30E120 Pin 1 C PIN 2 A PIN 3 - Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current TC=25C TC=90C Symbol VRRM IF Value 1200 50 30 Unit V A Surge non repetitive forward current TC=25C, tp=10 ms, sine halfwave I FSM I FRM Ptot 102 76.5 W 138 66 Maximum repetitive forward current TC=25C, tp limited by Tjmax, D=0.5 Power dissipation TC=25C TC=90C Operating and storage temperature Soldering temperature wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg TS -55...+150 260 C C Rev.2.3 Page 1 2009-08-19 IDP30E120 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA RthJA - Values typ. 35 max. 0.9 62 62 - Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Reverse leakage current V R=1200V, T j=25C V R=1200V, T j=150C Symbol min. IR VF - Values typ. max. Unit A 1.65 1.7 100 2500 V 2.15 - Forward voltage drop IF=30A, T j=25C IF=30A, T j=150C 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.3 Page 2 2009-08-19 IDP30E120 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time V R=800V, IF=30A, diF/dt=850A/s, Tj =25C V R=800V, IF=30A, diF/dt=850A/s, Tj =125C V R=800V, IF=30A, diF/dt=850A/s, Tj =150C Symbol min. t rr I rrm Q rr S - Values typ. max. Unit ns 243 355 380 23.7 28.3 29.5 2630 4700 5200 6 7.4 7.5 A nC - Peak reverse current V R=800V, IF = 30 A, di F/dt=850A/s, T j=25C V R=800V, IF =30A, diF/dt=850A/s, Tj=125C V R=800V, IF =30A, diF/dt=850A/s, Tj=150C Reverse recovery charge V R=800V, IF=30A, diF/dt=850A/s, Tj =25C V R=800V, IF =30A, diF/dt=850A/s, Tj=125C V R=800V, IF =30A, diF/dt=850A/s, Tj=150C Reverse recovery softness factor V R=800V, IF=30A, diF/dt=850A/s, Tj =25C V R=800V, IF=30A, diF/dt=850A/s, Tj =125C V R=800V, IF=30A, diF/dt=850A/s, Tj =150C Rev.2.3 Page 3 2009-08-19 IDP30E120 1 Power dissipation Ptot = f (TC) parameter: Tj 150C W 140 2 Diode forward current IF = f(TC) parameter: Tj 150C 55 A 45 40 120 110 100 P tot 80 70 60 50 40 30 20 10 0 25 50 75 100 IF 150 90 35 30 25 20 15 10 5 C TC 0 25 50 75 100 C TC 150 3 Typ. diode forward current IF = f (VF) 90 4 Typ. diode forward voltage VF = f (Tj) 2.4 60A A V 70 60 -55C 25C 100C 150C 50 1.8 40 30 20 1.4 10 0 0 1.2 -60 1.6 15A 30A 0.5 1 1.5 2 V VF 3 VF 2 IF -20 20 60 100 160 C Tj Rev.2.3 Page 4 2009-08-19 IDP30E120 5 Typ. reverse recovery time trr = f (diF/dt) parameter: V R = 800V, T j = 125C 1100 6 Typ. reverse recovery charge Qrr =f(diF/dt) parameter: VR = 800V, Tj = 125 C 6500 ns 900 800 nC 60A 5500 60A 30A 15A Q rr 5000 30A trr 700 4500 600 4000 500 400 300 200 200 3500 15A 3000 300 400 500 600 700 800 A/s 1000 di F/dt 2500 200 300 400 500 600 700 800 A/s 1000 diF/dt 7 Typ. reverse recovery current Irr = f (diF/dt) parameter: V R = 800V, T j = 125C 35 8 Typ. reverse recovery softness factor S = f(diF /dt) parameter: VR = 800V, Tj = 125C 18 A 60A 30A 15A 14 25 12 20 10 15 8 10 60A 30A 15A Irr S 6 5 200 300 400 500 600 700 800 A/s 1000 di F/dt 4 200 300 400 500 600 700 800 A/s 1000 diF/dt Rev.2.3 Page 5 2009-08-19 IDP30E120 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP30E120 K/W 10 0 ZthJC 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 10 -3 single pulse 10 -4 -7 10 0.02 0.01 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2.3 Page 6 2009-08-19 IDP30E120 TO-220-2 Rev.2.3 Page 7 2009-08-19 IDP30E120 Published by Infineon Technologies AG 81726 Munich, Germany 81726 Munchen, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information Warnings For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.3 Page 8 2009-08-19 |
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