View IRHLA7970Z4_5012520.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD-97306
2N7630M2 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK)
Product Summary
Part Number Radiation Level RDS(on) ID IRHLA7970Z4 100K Rads (Si) 1.36 -0.56A IRHLA7930Z4 300K Rads (Si) 1.36 -0.56A
IRHLA7970Z4 60V, Quad P-CHANNEL
TECHNOLOGY
14-Lead Flat Pack
International Rectifier's R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
Features:
n n n n n n n n n n
5V CMOS and TTL Compatible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary N-Channel Available IRHLA770Z4
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = -4.5V, TC=25C ID @ VGS = -4.5V, TC=100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -0.56 -0.35 -2.24 0.6 0.005 10 26 -0.56 0.06 -5.79 -55 to 150
Pre-Irradiation
Units
A W
W/C
V mJ A mJ V/ns
C
300 (0.63 in./1.6 mm from case for 10s) 0.52 (Typical)
g
www.irf.com
1
03/17/08
IRHLA7970Z4, 2N7630M2
Pre-Irradiation
Electrical Characteristics For Each P-Channel Device @Tj = 25C (Unless Otherwise specified)
Parameter Min Typ Max Units
-- -0.063 -- -- 3.2 -- -- -- -- -- -- -- -- -- -- -- -- 20 -- -- 1.36 V V/C
Test Conditions
VGS = 0V, ID = -250A Reference to 25C, ID = -1.0mA VGS = -4.5V, ID = -0.35A VDS = VGS, ID = -250A VDS = -10V, IDS = -0.35A A VDS= -48V ,VGS= 0V VDS = -48V, VGS = 0V, TJ =125C VGS = -10V VGS = 10V VGS = -4.5V, ID = -0.56A VDS = -30V VDD = -30V, ID = -0.56A, VGS = -5.0V, RG = 24 A
BVDSS Drain-to-Source Breakdown Voltage -60 BV DSS /T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -1.0 -- VGS(th)/TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance 0.7 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- --
-2.0 V -- mV/C -- S -1.0 -10 A -100 100 2.8 1.7 1.2 22 22 40 32 -- nA nC
ns
nH
Measured from Drain lead (6mm /0.25in from pack.) to Source lead (6mm/0.25in from pack.)with Source wire internally bonded from Source pin to Drain pad
Ciss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
-- -- -- --
144 41 6.6 55
-- -- -- --
pF
VGS = 0V, VDS = -25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -0.56 -2.24 -5.0 35 9.6
Test Conditions
A
V ns nC Tj = 25C, IS = -0.56A, VGS = 0V A Tj = 25C, IF = -0.56A, di/dt -100A/s VDD -25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA Junction-to-Ambient
Min Typ Max Units
-- -- 210
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available International Rectifier Website. For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics Pre-Irradiation
IRHLA7970Z4, 2N7630M2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-state Resistance (14-Lead Flat Pack) Diode Forward Voltage
Up to 300K Rads (Si)1
Min
Max
Units
V nA A V
Test Conditions
VGS = 0V, ID = -250A VGS = VDS, ID = -250A VGS = -10V VGS = 10V VDS= -48V, VGS= 0V VGS = -4.5V, ID = -0.35A VGS = -4.5V, ID = -0.35A VGS = 0V, ID = -0.56A
-60 -1.0 -- -- -- -- -- --
-- -2.0 -100 100 -1.0 1.25 1.36 -5.0
1. Part numbers IRHLA7970Z4, IRHLA7930Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion LET
(MeV/(mg/cm )) Br I Au 37 60 84
2
Energy Range
(MeV) 305 370 390 (m) 39 34 30 0V -60 -60 -60 2V -60 -60 -60 4V -60 -60 -60 5V -60 -60 -60
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
6V -60 -60 -
7V -50 -20 -
8V -35 -
10V -25 -
-70 -60 -50 -40 -30 -20 -10 0 0 1 2 3 4 5 VGS 6 7 8 9 10
Br I Au
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
VDS
3
IRHLA7970Z4, 2N7630M2
Pre-Irradiation
10
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
VGS TOP -10V -5.0V -4.5V -3.25V -2.75V -2.5V -2.25V BOTTOM -2.0V
10
TOP VGS -10V -5.0V -4.5V -3.25V -2.75V -2.5V -2.25V -2.0V
BOTTOM
1
1 -2.0V
-2.0V 60s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
1.5
T J = 150C 1 T J = 25C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -0.56A
-I D, Drain-to-Source Current (A)
1.0
VDS = -25V 60s PULSE WIDTH 15 0.1 1 1.5 2 2.5 3 -VGS, Gate-to-Source Voltage (V)
VGS = -4.5V
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHLA7970Z4, 2N7630M2
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 2 3 4 5 6 7 8
ID = -0.56A
RDS(on), Drain-to -Source On Resistance ( )
RDS(on), Drain-to -Source On Resistance ()
4.0
2.2 2.0 1.8 1.6 1.4 T J = 25C 1.2 1.0 Vgs = -4.5V 0.8 0 0.5 1.0 1.5 2.0 2.5 -I D, Drain Current (A) T J = 150C
T J = 150C
T J = 25C
9
10 11 12
-V GS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs Gate Voltage
Fig 6. Typical On-Resistance Vs Drain Current
-V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
80
2.5
-V GS(th) Gate threshold Voltage (V)
ID = -1.0mA
2.0
70
1.5
1.0
60
ID = -50A
0.5
ID = -250A
ID = -1.0mA ID = -150mA
-60 -40 -20 0 20 40 60 80 100 120 140 160
50 -60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
T J , Temperature ( C )
T J , Temperature ( C )
Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs Temperature
www.irf.com
5
IRHLA7970Z4, 2N7630M2
Pre-Irradiation
240
C oss = Cds + Cgd
-V GS, Gate-to-Source Voltage (V)
200
VGS = 0V, f = 1 MHz C iss = C gs + Cgd, C ds SHORTED C rss = C gd
12 ID = -0.56A 10 8 6 4 2 0 VDS= -48V VDS= -30V VDS= -12V
C, Capacitance (pF)
160
Ciss
120
80
Coss
40
Crss
0 1 10 100
FOR TEST CIRCUIT SEE FIGURE 17 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-V DS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs.Drain-to-Source Voltage
10
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
0.6 0.5
-I D, Drain Current (A)
-I SD, Reverse Drain Current (A)
0.4 0.3 0.2 0.1
T J = 150C 1
T J = 25C
VGS = 0V 0.10 0.5 1 1.5 2 2.5 3 -V SD , Source-to-Drain Voltage (V)
0 25 50 75 100 125 150 T C , Case Temperature (C)
Fig 11. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current Vs. Case Temperature
6
www.irf.com
Pre-Irradiation
IRHLA7970Z4, 2N7630M2
10 OPERATION IN THIS AREA LIMITED BY R DS(on)
EAS , Single Pulse Avalanche Energy (mJ)
60
-I D, Drain-to-Source Current (A)
50
TOP BOTTOM
ID -0.25A -0.35A -0.56A
40
100s 1
30
20
1ms Tc = 25C Tj = 150C Single Pulse 1 10 -V DS , Drain-to-Source Voltage (V) 10ms 100
10
0.1
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy Vs. Drain Current
1000
Thermal Response ( Z thJA )
100
D = 0.50 0.20 0.10 SINGLE PULSE ( THERMAL RESPONSE )
P DM t1 t2
10
0.05 0.02 0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1 1 10 100 1000
1 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
7
IRHLA7970Z4, 2N7630M2
Pre-Irradiation
VDS
L
I AS
VDD A
RG
D.U.T.
IAS
-20V VGS
DRIVER
0.01
tp
tp
15V
V(BR)DSS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
-4.5V
QG
12V .2F
50K .3F
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
RD V DS VGS
Fig 17b. Gate Charge Test Circuit
td(on)
tr
t d(off)
VGS
D.U.T. V DD
10%
VGS
Pulse Width 1 s Duty Factor 0.1 %
Fig 18a. Switching Time Test Circuit
8
+
-
RG
90% VDS
Fig 18b. Switching Time Waveforms
www.irf.com
+
D.U.T.
-
QGS
QGD
VDS
tf
Pre-Irradiation
IRHLA7970Z4, 2N7630M2
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = -25V, starting TJ = 25C, L= 166mH Peak IL = -0.56A, VGS = -10V A ISD -0.56A, di/dt -161A/s, VDD -60V, TJ 150C -10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- 14-Lead Flat Pack
LEAD ASSIGNMENT
D1 S1 G1 NC G2 S2 D2 Q2 Q3 Q1 Q4 D4 S4 G4 NC G3 S3 D3
LEGEND
D = DRAIN, S = SOURCE , G = GATE, NC = NO CONNECTION
CHANNELS
P Channel = Q1,Q2, Q3 and Q4
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2008
www.irf.com
9

▲Up To Search▲

Price & Availability of IRHLA7970Z4

	To Download IRHLA7970Z4 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .