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| HFA08TB60S Vishay High Power Products HEXFRED(R) Ultrafast Soft Recovery Diode, 8 A FEATURES * * * * * * Base cathode + 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level BENEFITS * * * * * Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count N/C 1 3 - Anode D2PAK DESCRIPTION HFA08TB60S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 8 A continuous current, the HFA08TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED(R) product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08TB60S is ideally suited for applications in power supplies (PFC boost diode) and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY VR VF at 8 A at 25 C IF(AV) trr (typical) TJ (maximum) Qrr (typical) dI(rec)M/dt (typical) IRRM 600 V 1.7 V 8A 18 ns 150 C 65 nC 240 A/s 5.0 A ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current Single pulse forward current Maximum repetitive forward current Maximum power dissipation Operating junction and storage temperature range SYMBOL VR IF IFSM IFRM PD TJ, TStg TC = 25 C TC = 100 C TC = 100 C TEST CONDITIONS VALUES 600 8.0 60 24 36 14 - 55 to + 150 W C A UNITS V Document Number: 93045 Revision: 22-Oct-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 HFA08TB60S Vishay High Power Products HEXFRED(R) Ultrafast Soft Recovery Diode, 8 A ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR IR = 100 A IF = 8.0 A Maximum forward voltage VFM IF = 16 A IF = 8.0 A, TJ = 125 C Maximum reverse leakage current Junction capacitance Series inductance IRM CT LS VR = VR rated TJ = 125 C, VR = 0.8 x VR rated VR = 200 V See fig. 2 See fig. 3 See fig. 1 TEST CONDITIONS MIN. 600 TYP. 1.4 1.7 1.4 0.3 100 10 8.0 MAX. 1.7 2.1 1.7 5.0 500 25 A pF nH V UNITS Measured lead to lead 5 mm from package body DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 6 SYMBOL trr trr1 trr2 Peak recovery current Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 IRRM1 IRRM2 Qrr1 Qrr2 dI(rec)M/dt1 dI(rec)M/dt2 TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/s, VR = 30 V TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C IF = 8.0 A dIF/dt = 200 A/s VR = 200 V MIN. TYP. 18 37 55 3.5 4.5 65 124 240 210 MAX. 55 90 5.0 8.0 138 360 A/s A ns UNITS nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Lead temperature Thermal resistance, junction to case Thermal resistance, junction to ambient Weight Marking device Case style D2PAK SYMBOL Tlead RthJC RthJA Typical socket mount TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s MIN. TYP. 2.0 0.07 MAX. 300 3.5 K/W 80 g oz. UNITS C HFA08TB60S www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 93045 Revision: 22-Oct-08 HFA08TB60S HEXFRED(R) Vishay High Power Products Ultrafast Soft Recovery Diode, 8 A IF - Instantaneous Forward Current (A) 100 1000 TJ = 150 C IR - Reverse Current (A) 100 TJ = 125 C 10 1 0.1 TJ = 25 C 0.01 0.001 10 TJ = 150 C TJ = 125 C TJ = 25 C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 100 VR - Reverse Voltage (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 TJ = 25 C 1 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 ZthJC - Thermal Response 1 PDM 0.1 Single pulse (thermal response) 0.01 0.00001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 0.0001 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93045 Revision: 22-Oct-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 HFA08TB60S Vishay High Power Products 80 IF = 16 A IF = 8 A IF = 4 A HEXFRED(R) Ultrafast Soft Recovery Diode, 8 A 500 VR = 200 V TJ = 125 C TJ = 25 C 400 60 Qrr (nC) trr (ns) 300 40 200 IF = 16 A IF = 8 A IF = 4 A 20 VR = 200 V TJ = 125 C TJ = 25 C 1000 100 0 100 0 100 1000 dIF/dt (A/s) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt dIF/dt (A/s) Fig. 7 - Typical Stored Charge vs. dIF/dt 20 VR = 200 V TJ = 125 C TJ = 25 C 10 000 IF = 16 A IF = 8 A IF = 4 A 10 IF = 16 A IF = 8 A IF = 4 A dI(rec)M/dt (A/s) 15 Irr (A) 1000 5 VR = 200 V TJ = 125 C TJ = 25 C 1000 100 100 1000 0 100 dIF/dt (A/s) Fig. 6 - Typical Recovery Current vs. dIF/dt dIF/dt (A/s) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 93045 Revision: 22-Oct-08 HFA08TB60S HEXFRED(R) Vishay High Power Products Ultrafast Soft Recovery Diode, 8 A VR = 200 V 0.01 L = 70 H D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information http://www.vishay.com/doc?95046 http://www.vishay.com/doc?95054 http://www.vishay.com/doc?95032 Document Number: 93045 Revision: 22-Oct-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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