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| FDD8426H Dual N & P-Channel PowerTrench(R) MOSFET September 2009 FDD8426H Dual N & P-Channel PowerTrench(R) MOSFET N-Channel: 40 V, 12 A, 12 m P-Channel: -40 V, -10 A, 17 m Features Q1: N-Channel Max rDS(on) = 12 m at VGS = 10 V, ID = 12 A Max rDS(on) = 15 m at VGS = 4.5 V, ID = 11 A Q2: P-Channel Max rDS(on) = 17 m at VGS = -10 V, ID = -10 A Max rDS(on) = 27 m at VGS = -4.5 V, ID = -8.3 A 100% UIL Tested RoHS Compliant Inverter H-Bridge General Description These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench(R) process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Applications D1 D1/D2 D2 G1 G2 S2 G1 S1 Dual DPAK 4L S1 N-Channel G2 S2 P-Channel www..com MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (Package Limited) ID - Continuous (Silicon Limited) - Continuous - Pulsed Power Dissipation for Single Operation PD EAS TJ, TSTG Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range TC = 25C (Note 1) TA = 25C (Note 1a) TA = 25C (Note 1b) (Note 3) 112 TC = 25C TA = 25C Q1 40 20 17 56 12 40 56 3.1 1.3 162 mJ C -55 to +150 Q2 -40 20 -17 -48 -10 -40 65 W A Units V V Thermal Characteristics RJC RJC Thermal Resistance, Junction to Case, Single Operation for Q1 Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) (Note 1) 1.4 1.4 C/W Package Marking and Ordering Information Device Marking FDD8426H Device FDD8426H Package TO-252-4L 1 Reel Size 13" Tape Width 12mm Quantity 2500units www.fairchildsemi.com (c)2009 Fairchild Semiconductor Corporation FDD8426H Rev.C FDD8426H Dual N & P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = -250 A, VGS = 0 V ID = 250 A, referenced to 25 C ID = -250 A, referenced to 25 C VDS = 32 V, VGS = 0 V VDS = -32 V, VGS = 0 V VGS = 20 V, VDS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 40 -40 35 -32 1 -1 100 100 V mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250 A VGS = VDS, ID = -250 A ID = 250 A, referenced to 25 C ID = -250 A, referenced to 25 C VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 11 A VGS = 10 V, ID = 12 A, TJ = 125 C VGS = -10 V, ID = -10 A VGS = -4.5 V , ID = -8.3 A VGS = -10 V, ID = -10 A, TJ = 125 C VDD = 5 V, ID = 12 A VDD = -5 V, ID = -10 A Q1 Q2 Q1 Q2 Q1 1.5 -1.5 2 2 -6 6 9.3 11 14 13 19 19 53 31 12 15 22 17 27 30 3.0 -3.0 V mV/C rDS(on) Static Drain to Source On Resistance m Q2 Q1 Q2 gFS Forward Transconductance S Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Q1 VDS = 20 V, VGS = 0 V, f = 1MHZ Q2 VDS = -20 V, VGS = 0 V, f = 1MHZ Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 2055 1900 255 330 165 200 1.1 3.3 2735 2650 335 440 245 300 pF pF pF www..com Switching td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge Q1 VDD = 20 V, ID = 12 A, VGS = 10 V, RGEN = 6 Q2 VDD = -20 V, ID = -10 A, VGS = -10 V, RGEN = 6 VGS = 0 V to 10 V Q1 VGS = 0 V to -10 V V = 20 V, DD VGS = 0 V to 5 V ID = 12 A VGS = 0 V to -5 V Q2 VDD = -20 V, ID = -10 A Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 9.7 9.7 4.9 6.9 27 32 3.7 7.5 38 37 20 20 6.3 6.6 7.1 8 20 20 10 14 43 51 10 15 53 52 28 28 ns ns ns ns nC nC nC nC (c)2009 Fairchild Semiconductor Corporation FDD8426H Rev.C 2 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Drain-Source Diode Characteristics VSD trr Qrr Notes: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 12 A VGS = 0 V, IS = -10 A Q1 IF = 12 A, di/dt = 100 A/s Q2 IF = -10 A, di/dt = 100 A/s (Note 2) (Note 2) Q1 Q2 Q1 Q2 Q1 Q2 0.8 -0.8 22 25 11 14 1.2 -1.2 35 40 20 22 V ns nC Q1 a. 40 C/W when mounted on a 1 in2 pad of 2 oz copper b. 96 C/W when mounted on a minimum pad of 2 oz copper Q2 a. 40 C/W when mounted on a 1 in2 pad of 2 oz copper b. 96 C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Starting TJ = 25 C, N-ch: L = 1 mH, IAS = 15 A, VDD =36 V, VGS = 10 V; P-ch: L = 1 mH, IAS = -18 A, VDD = -36 V, VGS = -10 V. www..com (c)2009 Fairchild Semiconductor Corporation FDD8426H Rev.C 3 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25C unless otherwise noted 40 VGS = 6 V ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 2.5 30 2.0 VGS = 3.5 V VGS = 4.5 V VGS = 6 V 20 VGS = 4.5 V VGS = 4 V 1.5 VGS = 4 V 10 VGS = 3.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 10 V 0 0.0 0.5 0 10 20 30 40 ID, DRAIN CURRENT (A) 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 300 SOURCE ON-RESISTANCE (m) ID = 12 A VGS = 10 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.5 rDS(on), DRAIN TO ID = 12 A 200 TJ = 125 oC 1.2 100 TJ = 25 oC 0.9 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) www..com Figure 3. Normalized On Resistance vs Junction Temperature 40 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 40 10 VGS = 0 V ID, DRAIN CURRENT (A) 30 VDS = 5 V TJ = 150 oC TJ = 150 oC 1 20 TJ = 25 oC 0.1 TJ = 25 oC 10 TJ = -55 oC 0.01 TJ = -55 oC 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.001 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2009 Fairchild Semiconductor Corporation FDD8426H Rev.C 4 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 12 A VDD = 10 V VDD = 20 V CAPACITANCE (pF) 5000 Ciss 8 6 VDD = 30 V 1000 4 2 0 0 10 20 30 40 Qg, GATE CHARGE (nC) Coss f = 1 MHz VGS = 0 V Crss 100 0.1 1 10 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 80 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT (A) 10 60 VGS = 10 V TJ = 25 TJ = 125 oC oC 40 VGS = 4.5 V 20 RJC = 1.4 C/W o TJ = 150 oC 1 0.01 0.1 1 10 100 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C) www..com Figure 9. Unclamped Inductive Switching Capability 100 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 SINGLE PULSE RJC = 1.4 oC/W TC = 25 oC ID, DRAIN CURRENT (A) 100 us 10 THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms 100 ms 1s 1 SINGLE PULSE TJ = MAX RATED RJC = 1.4 oC/W TC = 25 oC 100 0.1 0.1 1 10 100 200 50 -4 10 10 -3 10 -2 10 -1 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2009 Fairchild Semiconductor Corporation FDD8426H Rev.C 5 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZJC 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJc + TC SINGLE PULSE RJC = 1.4 C/W o 0.001 -4 10 10 -3 10 -2 10 -1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 P DM t1 0.001 SINGLE PULSE RJA = 96 C/W (Note 1b) o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -2 0.0001 -4 10 10 -3 10 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve www..com (c)2009 Fairchild Semiconductor Corporation FDD8426H Rev.C 6 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25 C unless otherwise noted 40 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -10 V 3.0 2.5 2.0 VGS = -4.5 V VGS = -3.5 V VGS = -4 V -ID, DRAIN CURRENT (A) 30 VGS = -6 V VGS = -4.5 V 20 VGS = -4 V 1.5 VGS = -6 V 10 VGS = -3.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = -10 V 0 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4 0.5 0 10 20 -ID, DRAIN CURRENT (A) 30 40 Figure 15. On- Region Characteristics Figure 16. Normalized on-Resistance vs Drain Current and Gate Voltage 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE SOURCE ON-RESISTANCE (m) 80 ID = -10 A VGS = -10 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.5 rDS(on), DRAIN TO 60 ID = -10 A 1.2 40 TJ = 125 oC 0.9 20 TJ = 25 oC 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) www..com Figure 17. Normalized On-Resistance vs Junction Temperature Figure 18. On-Resistance vs Gate to Source Voltage 40 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) 40 VGS = 0 V 10 TJ = 150 oC 30 VDS = -5 V 1 TJ = 25 oC 20 TJ = 150 oC 10 TJ = 25 oC TJ = -55 oC 0.1 TJ = -55 oC 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.01 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 19. Transfer Characteristics Figure 20. Source to Drain Diode Forward Voltage vs Source Current (c)2009 Fairchild Semiconductor Corporation FDD8426H Rev.C 7 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25C unless otherwise noted 10 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -10 A 5000 Ciss CAPACITANCE (pF) VDD = -10 V 8 6 VDD = -20 V 1000 Coss 4 VDD = -30 V 2 0 0 10 20 Qg, GATE CHARGE (nC) f = 1 MHz VGS = 0 V Crss 30 40 100 0.1 1 10 40 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 21. Gate Charge Characteristics Figure 22. Capacitance vs Drain to Source Voltage 60 -ID, DRAIN CURRENT (A) 20 -IAS, AVALANCHE CURRENT (A) 10 TJ = 25 oC VGS = -10 V 40 VGS = -4.5 V TJ = 125 oC 20 RJC = 1.4 C/W o TJ = 150 oC 1 0.01 0.1 1 10 100 500 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C) www..com Figure 23. Unclamped Inductive Switching Capability Figure 24. Maximum Continuous Drain Current vs Case Temperature 100 P(PK), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 1000 SINGLE PULSE RJC = 1.4 C/W o 100 us 10 THIS AREA IS LIMITED BY rds(on) 1 ms 10 ms 100 ms 1s 1 SINGLE PULSE TJ = MAX RATED RJC = 1.4 oC/W TC = 25 oC 100 0.1 0.1 1 10 100 200 50 -4 10 10 -3 10 -2 10 -1 -VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 25. Forward Bias Safe Operating Area Figure 26. Single Pulse Maximum Power Dissipation (c)2009 Fairchild Semiconductor Corporation FDD8426H Rev.C 8 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25 C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZJC D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 0.1 SINGLE PULSE RJC = 1.4 C/W o 0.05 -4 10 10 -3 10 -2 10 -1 t, RECTANGULAR PULSE DURATION (sec) Figure 27. Junction-to-Case Transient Thermal Response Curve 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.001 SINGLE PULSE RJA = 96 C/W (Note 1b) o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.0001 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (sec) www..com Figure 28. Junction-to-Ambient Transient Thermal Response Curve (c)2009 Fairchild Semiconductor Corporation FDD8426H Rev.C 9 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout www..com (c)2009 Fairchild Semiconductor Corporation FDD8426H Rev.C 10 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. PowerTrench(R) AccuPowerTM FPSTM The Power Franchise(R) PowerXSTM Auto-SPMTM F-PFSTM (R) (R) Programmable Active DroopTM Build it NowTM FRFET SM (R) QFET Global Power Resource CorePLUSTM TinyBoostTM Green FPSTM QSTM CorePOWERTM TinyBuckTM Green FPSTM e-SeriesTM Quiet SeriesTM CROSSVOLTTM TinyCalcTM GmaxTM RapidConfigureTM CTLTM TinyLogic(R) GTOTM Current Transfer LogicTM (R) TINYOPTOTM IntelliMAXTM EcoSPARK TM TinyPowerTM EfficentMaxTM Saving our world, 1mW /W /kW at a timeTM ISOPLANARTM TinyPWMTM EZSWITCHTM* SmartMaxTM MegaBuckTM TinyWireTM TM* SMART STARTTM MICROCOUPLERTM (R) TriFault DetectTM SPM MicroFETTM TRUECURRENTTM* STEALTHTM MicroPakTM (R) SuperFETTM MillerDriveTM (R) Fairchild SuperSOTTM-3 MotionMaxTM Fairchild Semiconductor(R) SuperSOTTM-6 UHC(R) Motion-SPMTM (R) FACT Quiet SeriesTM Ultra FRFETTM SuperSOTTM-8 OPTOLOGIC FACT(R) OPTOPLANAR(R) UniFETTM SupreMOSTM (R) (R) FAST VCXTM SyncFETTM FastvCoreTM VisualMaxTM Sync-LockTM FETBenchTM XSTM (R)* PDP SPMTM (R)* FlashWriter Power-SPMTM tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions www..com for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c)2009 Fairchild Semiconductor Corporation FDD8426H Rev.C 11 www.fairchildsemi.com |
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