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Type
BSZ42DN25NS3 G
$(*'#$%TM3 Power-Transistor
Features 9 /2* * &% ' % $ % $ $ .- 4&0 * , 7 .0 1.9 $ )" - - &+ - .0 " ++ , &4&+ 9 6 &+&- 2 (" 2& $ )" 0 6 R DS(on) product (FOM) $+ (& 9 .5 .- 0 * 2" - $ & R DS(on) &11 9
8 ./&0 2* ( 2&, /&0 230 ""& 9 # ' && + % /+ 2* ( . 0 &" "$ ., /+" - 2 *
1)
Product Summary VDS RDS(on),max ID 250 425 5 V m# A
PG-TSDSON-8
9 3" +'&% " $ $ .0 * ( 2. ** %-
for target application
9 " + .(&- ' && " $ $ .0 * ( 2. 0 %-
Type BSZ42DN25NS3 G
Package PG-TSDSON-8
Marking 42DN20N
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1) 2)
Value 5 3.5 20 40 20
Unit A
I D,pulse E AS V GS P tot T j, T stg
T C=25 C I D=2.5 A, R GS=25 #
mJ V W C
T C=25 C
33.8 -55 ... 150 55/150/56
J-STD20 and JESD22 see figure 3
Rev. 2.1
page 1
2010-09-01
BSZ42DN25NS3 G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area3) 3.7 60 K/W Values typ. max. Unit
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=13 A V DS=200 V, V GS=0 V, T j=25 C V DS=200 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=2.5 A V GS=20 V, V DS=0 V V GS=10 V, I D=2.5 A 250 2 3 0.1 4 1 A V
3
10 1 371 1.7 6
100 100 425 nA m# # S
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air.
3)
Rev. 2.1
page 2
2010-09-01
BSZ42DN25NS3 G
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
4)
Values typ. max.
Unit
C iss C oss C rss t d(on) tr t d(off) tf V DD=100 V, V GS=10 V, I D=2.5 A, R G=1.6 # V GS=0 V, V DS=100 V, f =1 MHz
-
320 21 5.1 3 2 8 5
430 28 -
pF
ns
Q gs Q gd Q sw Qg V plateau Q oss V DD=100 V, V GS=0 V V DD=101 V, I D=2.5 A, V GS=0 to 10 V
-
1.4 0.8 1.2 4.2 4.4 7
5.5 9
nC
V nC
IS I S,pulse V SD t rr Q rr
T C=25 C V GS=0 V, I F=5 A, T j=25 C V R=100 V, I F=I S, di F/dt =100 A/s -
0.9 70 159
5.0 20 1.2 -
A
V ns nC
See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2010-09-01
BSZ42DN25NS3 G
1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS:
!
40
6
5 30 4
Ptot [W]
ID [A]
20
3
2 10 1
0 0 40 80 120 160
0 0 40 80 120 160
TC [&C]
TC [&C]
3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p
102
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
1 s
101
10 s
0.5
ZthJC [K/W]
100 s
ID [A]
100
0.2
0.1 0.05
1 ms
100
0.02 0.01
10 ms
single pulse
DC
10-1 10-1 100 101 102 103
10-1 10-5 10-4 10-3 10-2 10-1 100
VDS [V]
tp [s]
Rev. 2.1
page 4
2010-09-01
BSZ42DN25NS3 G
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
10
6V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
600
7V
500 8
10 V 5.5 V 5V 5V 5.5 V
400
10 V 6V
RDS(on) [m ]
6
8V
ID [A]
300
4
200
4.5 V
2 100
0 0 1 2 3 4 5
0 0 1 2 3 4 5 6
VDS [V]
ID [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
10
8 Typ. forward transconductance g fs=f(I D); T j=25 C
12
8
10
8 6
gfs [S]
4 2
150 C 25 C
ID [A]
6
4
2
0 0 2 4 6 8
0 0 2 4 6 8 10
VGS [V]
ID [A]
Rev. 2.1
page 5
2010-09-01
BSZ42DN25NS3 G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=2.5 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
1200 4
3.5 1000
130 A
3 800
13 A
RDS(on) [m ]
2.5
600
98 %
VGS(th) [V]
typ
2
1.5
400
1 200 0.5
0 -60 -20 20 60 100 140 180
0 -60 -20 20 60 100 140 180
Tj [&C]
Tj [&C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
103
100
Ciss
Coss
102
10
25 C
C [pF]
IF [A]
150 C, 98%
101
Crss
1
150 C 25 C, 98%
100 0 40 80 120 160 200
0.1 0 0.5 1 1.5 2
VDS [V]
VSD [V]
Rev. 2.1
page 6
2010-09-01
BSZ42DN25NS3 G
13 Avalanche characteristics I AS=f(t AV); R GS=25 # parameter: T j(start) 14 Typ. gate charge V GS=f(Q gate); I D=2.5 A pulsed parameter: V DD
10 9 8 7
125 V 200 V
6
VGS [V]
50 V
5 4 3 2 1 0 0 1 2 3 4 5
Qgate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
280
270
VBR(DSS) [V]
260
250
240
230 -60 -20 20 60 100 140 180
Tj [&C]
BSZ42DN25NS3 G
Package Outline:PG-TSDSON-8
Rev. 2.1
page 8
2010-09-01
BSZ42DN25NS3 G
' $ (,%-0 2 & (4$ , (, 2 (1 # -" 3 + $ ,2 * (, ,- $ 4$ ,2 $ 0 & 0 $ # + (-, ' 1' * !$ # 4 * $ 1 12 2 # ' $ 0 (, ,# -0 ,7 (,%-0 2 0 & 0 (,& 2 $ 3 $ $ + (-, $ # ' ,%(,$ -, $ " ' ,-* ($ 1 ' $ 0 ! 7 # (1" * (+ 1 ,7 ,# -& $ -% ,7 2 (0 . 07 '# 2
1
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(," * # (,& 5(2 -3 2(+ (2 2 5 0 ,2 1 -% ,-,
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13 ..-0 # $ 4(" $ 1 -01712 + 1 -,* 5(2 -& 1 (%$ 2 $ 7' 2 $ $ 6 $ 11 50 2 , ..0 *-% ,%(,$ -, $ " ' ,-* ($ 1 (% ' .0 (2 $ -4 -& % (* 0 -% 13 " ' " -+ .-,$ ,2 " , 3$ 1 0 1-, ! * ! $ $ 6 " 2 # 2 " 3 1$ 2 $ % (* 0 -% 2 2(%$
13 ..-0 # $ 4(" $ -01712 + -02 %%$ " 2 $ 7 .$ $ ' 3$ '* 2 $ 2 $ 1 %$ 2 -0$ %%$ " 2 ,$ 11 -% 2 2 $ 4(" $ -01712 + (%$ 13 ..-0 # $ 4(" $ 1 -01712 + 1 0 ' 7 (4$ '# $ 2 $ $ (,2 ,# $ # 2 ! $ (+ .* ,2 # (, 2 $ ' 3 + , ! -# 7 -02 13 ..-0 ,# -0+ (,2 (, ,# 13 12 (, $ $ ' 2
Rev. 2.1
page 9
2010-09-01

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Price & Availability of BSZ42DN25NS3G

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BSZ42DN25NS3GATMA1 47Y8009	Infineon Technologies AG	Mosfet, N-Ch, 250V, 5A, Tsdson; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Qualification:-Rohs Compliant: Yes \|Infineon BSZ42DN25NS3GATMA1	1000: USD0.433 500: USD0.433 250: USD0.433 100: USD0.433 50: USD0.433 25: USD0.433 10: USD0.433 1: USD0.433	80
BSZ42DN25NS3GATMA1 86AK4598	Infineon Technologies AG	Mosfet, N-Ch, 250V, 5A, Tsdson Rohs Compliant: Yes \|Infineon BSZ42DN25NS3GATMA1	10000: USD0.551 5000: USD0.565	0

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BSZ42DN25NS3GATMA1 BSZ42DN25NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 250V 5A TSDSON-8	10000: USD0.47015 5000: USD0.4929 2000: USD0.51755 1000: USD0.54977 500: USD0.6749 100: USD0.7962 10: USD1.024 1: USD1.25	21960

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BSZ42DN25NS3GATMA1 47Y8009	Infineon Technologies AG	Trans MOSFET N-CH 250V 5A 8-Pin TSDSON T/R - Product that comes on tape, but is not reeled (Alt: 47Y8009)	100: USD0.935 50: USD1.02 25: USD1.11 10: USD1.21 1: USD1.47	0

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BSZ42DN25NS3GATMA1 726-BSZ42DN25NS3GATM	Infineon Technologies AG	MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3	1: USD1.27 10: USD0.986 100: USD0.81 500: USD0.695 1000: USD0.57 2500: USD0.564 5000: USD0.556 10000: USD0.53	27568
BSZ42DN25NS3 G 726-BSZ42DN25NS3G	Infineon Technologies AG	MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3	1: USD1.41 10: USD1.16 100: USD0.9 500: USD0.762 1000: USD0.621 2500: USD0.585 5000: USD0.556 10000: USD0.53	10862

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BSZ42DN25NS3GATMA1 E02:0323_03079019	Infineon Technologies AG	Trans MOSFET N-CH 250V 5A 8-Pin TSDSON EP T/R	10000: USD0.4685 5000: USD0.4883	5000
BSZ42DN25NS3GATMA1 V72:2272_06384498	Infineon Technologies AG	Trans MOSFET N-CH 250V 5A 8-Pin TSDSON EP T/R	1000: USD0.5436 500: USD0.585 250: USD0.6454 100: USD0.6493 25: USD0.728 10: USD0.732 1: USD0.827	1245

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BSZ42DN25NS3GATMA1 69264220	Infineon Technologies AG	Trans MOSFET N-CH 250V 5A 8-Pin TSDSON EP T/R	10000: USD0.5388 5000: USD0.565 2000: USD0.5813 1000: USD0.6013 500: USD0.6575 200: USD0.6888 100: USD0.73 50: USD0.8188 38: USD0.8225	12405
BSZ42DN25NS3GATMA1 80942363	Infineon Technologies AG	Trans MOSFET N-CH 250V 5A 8-Pin TSDSON EP T/R	10000: USD0.4673 5000: USD0.4871	5000
BSZ42DN25NS3GATMA1 69221459	Infineon Technologies AG	Trans MOSFET N-CH 250V 5A 8-Pin TSDSON EP T/R	1000: USD0.5436	1245

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BSZ42DN25NS3GATMA1 C1S322000233388	Infineon Technologies AG	Trans MOSFET N-CH 250V 5A 8-Pin TSDSON EP T/R	10000: USD0.431 5000: USD0.452 2000: USD0.465 1000: USD0.481 500: USD0.543 200: USD0.576 100: USD0.61 50: USD0.683 10: USD0.687 1: USD0.785	12405

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