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| SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors 2N5157 DESCRIPTION *With TO-3 package *High breakdown voltage APPLICATIONS *Switching regulator *Inverters *Solenoid and relay drivers *Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Tc=25 CONDITIONS Open emitter Open base Open collector VALUE 700 500 7 3.5 100 165 -65~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT /W SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2N5157 SYMBOL TYP. MAX UNIT VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE fT Collector-emitter sustaining voltage IC=0.1A ; IB=0 IC=3A; IB=0.5A IC=3A; IB=0.5A VCB=700V; IE=0 TC=125 VCE=500V; IB=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V;f=5.0MHz 500 V Collector-emitter saturation voltage 1.2 V Base-emitter saturation voltage 1.5 0.2 2.0 5.0 V Collector cut-off current mA Collector cut-off current mA Emitter cut-off current 1.0 mA DC current gain 30 90 Transition frequency 2.8 MHz 2 SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5157 Fig.2 Outline dimensions 3 |
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