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| om .c SOT-89 Plastic-Encapsulate Transistors 4U et he SOT-89 2SD2908 TRANSISTOR (NPN) aS t a 1. D FEATURES . w Power 2. w dissipation 0.5 W (Tamb=25) 1 P: w 2 BASE COLLECTOR CM JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Collector current 5 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance m o .c U t4 e e h S ta a .D w w w 3. EMITTER 3 unless otherwise specified) Test conditions MIN TYP Ic=50A, IE=0 Ic=1mA, IB=0 MAX UNIT V V V 50 20 6 IE=50A, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 0.5 0.5 390 1 A A IEBO hFE(1) VCE=2V, IC=0.5A 120 VCE(sat) IC=4A, IB=100mA V MHz pF fT VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0, f=1MHz 150 30 Cob CLASSIFICATION OF hFE(1) Rank Range Marking Q 120-270 AHQ om R .c 180-390 4U et AHR e Sh ta a D . w w w |
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