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www..com PD- 91878D SMPS MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l IRF830A HEXFET(R) Power MOSFET VDSS 500V Rds(on) max 1.40 ID 5.0A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified ( See AN 1001) l TO-220AB GDS Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 5.0 3.2 20 74 0.59 30 5.3 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V V/ns C Typical SMPS Topologies: l l Two transistor Forward Half Bridge and Full Bridge Notes through are on page 8 www.irf.com 1 3/20/03 www..com IRF830A Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 --- --- 2.0 --- --- --- --- Typ. --- 0.60 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 1.4 VGS = 10V, ID = 3.0A 4.5 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 2.8 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 10 21 21 15 620 93 4.3 886 27 39 Max. Units Conditions --- S VDS = 50V, ID = 3.0A 24 ID = 5.0A 6.3 nC VDS = 400V 11 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 5.0A ns --- RG = 14 --- RD = 49,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 230 5.0 7.4 Units mJ A mJ Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. --- 0.50 --- Max. 1.7 --- 62 Units C/W Diode Characteristics Min. Typ. Max. Units IS ISM VSD trr Qrr ton Conditions D MOSFET symbol --- --- 5.0 showing the A G integral reverse --- --- 20 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 5.0A, VGS = 0V --- 430 650 ns TJ = 25C, IF = 5.0A --- 1.62 2.4 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com www..com IRF830A 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 1 1 4.5V 0.1 4.5V 0.01 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 1 10 20s PULSE WIDTH TJ = 150 C 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 5.0A I D , Drain-to-Source Current (A) 2.0 10 TJ = 150 C 1.5 TJ = 25 C 1 1.0 0.5 0.1 4.0 V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 www..com IRF830A 10000 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + C gd 20 ID = 5.0A VDS = 400V VDS = 250V VDS = 100V 16 C, Capacitance (pF) 1000 Ciss 12 100 Coss 8 10 4 Crss 1 1 10 100 1000 A 0 0 4 8 12 FOR TEST CIRCUIT SEE FIGURE 13 16 20 24 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 10us 10 100us 10 TJ = 150 C 1ms 1 10ms 1 TJ = 25 C 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 0.1 TC = 25 C TJ = 150 C Single Pulse 10 100 1000 10000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com www..com IRF830A 5.0 VDS VGS RD 4.0 ID , Drain Current (A) RG 10V Pulse Width 1 s Duty Factor 0.1 % D.U.T. + -VDD 3.0 2.0 Fig 10a. Switching Time Test Circuit 1.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 www..com IRF830A EAS , Single Pulse Avalanche Energy (mJ) 15V 500 VDS L DRIVER 400 ID 2.2A 3.2A BOTTOM 5.0A TOP RG 20V D.U.T IAS tp + V - DD 300 A 0.01 200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 100 0 25 50 75 100 125 150 Starting T , Junction Temperature( C) J I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS VG QGD V DSav , Avalanche Voltage (V) 790 785 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 780 50K 12V .2F .3F 775 D.U.T. VGS 3mA + V - DS 770 0.0 A 1.0 2.0 3.0 4.0 5.0 I av , Avalanche Current (A) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current 6 www.irf.com www..com IRF830A Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 www..com IRF830A Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO-220AB EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M A INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRF1010 9246 9B 1M DATE CODE (YYWW) YY = YEAR WW = WEEK Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 18mH RG = 25, IAS = 5.0A. (See Figure 12) ISD 5.0A, di/dt 370A/s, VDD V(BR)DSS, TJ 150C IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 3/03 8 www.irf.com |
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