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| SEMICONDUCTOR TECHNICAL DATA For antenna switches in mobile applications. FEATURES Array type (4 Diode in one package) Low Capacitance Low Series resistance TOP VIEW A KDP629UL SILICON EPITAXIAL PIN TYPE DIODE 1 D 6 B 12 C BOTTOM VIEW 7 MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range ) SYMBOL VR IF Tj Tstg RATING 30 100 150 -55 150 UNIT V mA SIDE VIEW DIM A B C D E F G MILLIMETERS _ 2.50 + 0.05 _ 1.20 + 0.05 _ 0.20 + 0.05 _ 0.40 + 0.05 _ 0.25 + 0.05 _ 0.45 + 0.05 Max 0.5 G ULP-12 Marking Lot No. Type Name EQUTVALENT CIRCUIT (TOP VIEW) 12 D4 D1 D2 D3 7 P9 1 6 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Current Forward Voltage Total Capacitance Series Resistance ESD-Capability * * Failure cirterion : IR>100nA at VR=30V. SYMBOL IR VF CT rs TEST CONDITION VR=30V IF=10mA VR=1V, f=1MHz IF=10mA, f=100MHz C=200pF, R=0 , Both forward and reverse direction 1 pulse MIN. 100 TYP. MAX. 0.1 1.0 0.30 1.3 UNIT A V pF 2008. 12. 8 Revision No : 0 E F 1/2 KDP629UL IF - VF 100 IR - V R 10-09 Ta=25 C FORWARD CURRENT IF (A) 10-1 10-2 10-3 10-4 10-5 10-6 REVERSE CURRENT IR (A) Ta=25 C 10-10 10-11 0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) CT - VR TOTAL CAPACITANCE CT (pF) 1.0 rs 100 - IF f=100MHz Ta=25 C SERIES RESISTANCE rS () 2 4 6 8 10 f=1MHz Ta=25 C 10 1 0.1 0 0 0 2 4 6 8 10 REVERSE VOLTAGE VR (V) FORWARD CURRENT IF (mA) 2008. 12. 8 Revision No : 0 2/2 |
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