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Freescale Semiconductor Technical Data
Document Number: MRFE6S9046N Rev. 0, 5/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier applications. * Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout = 35.5 Watts CW, f = 960 MHz Power Gain -- 19 dB Drain Efficiency -- 57% * Capable of Handling 5:1 VSWR, @ 32 Vdc, 940 MHz, 70 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness * Typical Pout @ 1 dB Compression Point ] 45 Watts CW * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 285 mA, Pout = 17.8 Watts Avg., Full Frequency Band (920 - 960 MHz) Power Gain -- 19 dB Drain Efficiency -- 42.5% Spectral Regrowth @ 400 kHz Offset = - 62.5 dBc Spectral Regrowth @ 600 kHz Offset = - 72 dBc EVM -- 2.1% rms Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRFE6S9046NR1 MRFE6S9046GNR1
920 - 960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRFE6S9046NR1
CASE 1487 - 05, STYLE 1 TO - 270 WB - 4 GULL PLASTIC MRFE6S9046GNR1 PARTS ARE SINGLE - ENDED
RFin/VGS
3
2 RFout/VDS
RFin/VGS
4
1 RFout/VDS
(Top View) Note: Exposed backside of the package is the source terminal for the transistor.
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDSS VGS VDD Tstg TC TJ
Value - 0.5, +66 - 6.0, +10 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc C C C
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
(c) Freescale Semiconductor, Inc., 2009. All rights reserved.
MRFE6S9046NR1 MRFE6S9046GNR1 1
RF Device Data Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 45 W CW, 28 Vdc, IDQ = 300 mA Case Temperature 80C, 18 W CW, 28 Vdc, IDQ = 300 mA Symbol RJC Value (1,2) 1.3 1.8 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 300 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Dynamic Characteristics (3) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 0.6 318 120 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1 2 0.1 2.2 3.1 0.3 3 4 0.4 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 35.5 W CW, IDQ = 300 mA, f = 960 MHz Characteristic Symbol Min Typ Max Power Gain Drain Efficiency Input Return Loss Gps D IRL 17.5 54 -- 19 57 - 13 -- -- -7
Unit dB % dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part internally matched both on input and output. 4. Measurement made with device in straight lead configuration before any lead forming operation is applied. (continued)
MRFE6S9046NR1 MRFE6S9046GNR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 300 mA, 920-960 MHz Bandwidth Pout @ 1 dB Compression Point IMD Symmetry @ 44 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 40 MHz Bandwidth @ Pout = 35.5 W CW Average Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 45 W CW Average Group Delay @ Pout = 45 W CW, f = 940 MHz Part - to - Part Insertion Phase Variation @ Pout = 45 W CW, f = 940 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) P1dB IMDsym -- -- 45 55 -- -- W MHz
VBWres GF Delay G P1dB
-- -- -- -- -- -- --
65 0.2 0.9 3.1 20 0.021 0.006
-- -- -- -- -- -- --
MHz dB ns dB/C dBm/C
Typical GSM EDGE Performances (In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 285 mA, Pout = 17.8 W Avg., 920 - 960 MHz EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM SR1 SR2 -- -- -- -- -- 19 42.5 2.1 - 62.5 - 72 -- -- -- -- -- dB % % rms dBc dBc
MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 3
R1 VBIAS
Z7 + C10 C5 Z9 Z6 C11 C12
VSUPPLY
RF INPUT
Z10 Z1 C1 C2 Z2 Z3 C4 Z4 Z5
Z11
Z12
C6
Z13
Z14 C9
Z15
RF OUTPUT
Z8 C3 DUT C13 C14
C7
C8
Z1 Z2 Z3 Z4 Z5 Z6* Z7 Z8* Z9*
0.200 0.196 0.380 0.321 0.039 0.281 0.892 0.751
x 0.044 x 0.044 x 0.044 x 0.450 x 0.450 x 0.040 x 0.051 x 0.040
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z10 Z11 Z12 Z13 Z14 Z15 PCB
0.040 x 0.450 Microstrip 0.321 x 0.450 Microstrip 0.080 x 0.280 Microstrip 0.372 x 0.044 Microstrip 0.124 x 0.044 Microstrip 0.200 x 0.044 Microstrip Rogers R04350, 0.020, r = 3.66
* Line length includes microstrip bends
Figure 2. MRFE6S9046NR1(GNR1) Test Circuit Schematic -- GSM EDGE Reference Design
Table 6. MRFE6S9046NR1(GNR1) Test Circuit Component Designations and Values -- GSM EDGE Reference Design
Part C1, C9 C2 C3, C4 C5, C11, C14 C6, C7 C8 C10, C13 C12 R1 Description 56 pF Chip Capacitors 2.4 pF Chip Capacitor 6.8 pF Chip Capacitors 10 F, 50 V Chip Capacitors 3.3 pF Chip Capacitors 4.7 pF Chip Capacitor 39 pF Chip Capacitors 470 F, 63 V Electrolytic Capacitor 4.7 K, 1/4 W Chip Resistor Part Number ATC600F560BT500XT ATC600F2R4BT500XT ATC600F6R8BT500XT GRM55DR61H106KA88B ATC600F3R3BT500XT ATC600F4R7BT500XT ATC600F390BT500XT MCGPR63V477M13X26 - RH CRCW12064701FKEA Manufacturer ATC ATC ATC Murata ATC ATC ATC Multicomp Vishay
MRFE6S9046NR1 MRFE6S9046GNR1 4 RF Device Data Freescale Semiconductor
VGS C10 C5 R1
C12
C11 C1 C2 CUT OUT AREA C4
C6
C8
C9
C7
C3
TO270-WB 2 GHz Rev. 3 - Output C13 C14 VDS TO270-WB 2 GHz Rev. 3 - Input
Figure 3. MRFE6S9046NR1(GNR1) Test Circuit Component Layout -- GSM EDGE Reference Design
MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
19.6 19.5 19.4 Gps, POWER GAIN (dB) 19.3 19.2 19.1 19 18.9 18.8 18.7 18.6 920 925 930 935 940 945 950 955 IRL VDD = 28 Vdc, Pout = 35.5 W CW, IDQ = 300 mA Gps D 58 57 D, DRAIN EFFICIENCY (%) 56 55 54 53 52 51 50 49 48 960
-16 -19 -22 -25 -28 -31
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 35.5 Watts CW
19.5 19.4 19.3 Gps, POWER GAIN (dB) 19.2 19.1 19 18.9 18.8 18.7 18.6 18.5 920 925 EVM IRL VDD = 28 Vdc, Pout = 17.8 W (Avg.) IDQ = 285 mA, EDGE Modulation Gps 42 41 40 39 38 6 5 4 3 2 935 940 945 950 955 1 960 D, DRAIN EFFICIENCY (%)
D
IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) IM3-U IM3-L IM5-L 10
EVM, ERROR VECTOR MAGNITUDE (% rms) IM7-L
-15 -20 -25 -30 -35 -40
930
f, FREQUENCY (MHz)
Figure 5. Power Gain, Input Return Loss, EVM and Drain Efficiency versus Frequency @ Pout = 17.8 Watts Avg.
21 IDQ = 450 mA 20 Gps, POWER GAIN (dB) 19 18 150 mA 17 16 15 1 10 Pout, OUTPUT POWER (WATTS) CW 100 VDD = 28 Vdc f = 940 MHz 300 mA 225 mA 375 mA -10 -20 -30 -40 IM5-U -50 -60 IM7-U -70 0.1 1 100 VDD = 28 Vdc, Pout = 44 W (PEP), IDQ = 300 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz
IMD, INTERMODULATION DISTORTION (dBc)
TWO-TONE SPACING (MHz)
Figure 6. Power Gain versus Output Power
Figure 7. Intermodulation Distortion Products versus Two - Tone Spacing
MRFE6S9046NR1 MRFE6S9046GNR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
24 85_C Gps 20 25_C 18 85_C 16 D 14 1 10 Pout, OUTPUT POWER (WATTS) CW 70 VDD = 28 Vdc IDQ = 300 mA f = 940 MHz 15 30 TC = -30_C 25_C 45 EVM, ERROR VECTOR MAGNITUDE (% rms) -30_C 75 6 5 4 3 17.8 W Avg. 2 1 5 W Avg. 0 900 910 920 930 940 950 960 970 980 VDD = 28 Vdc IDQ = 285 mA EDGE Modulation Pout = 26.5 W Avg.
0
D, DRAIN EFFICIENCY (%)
22 Gps, POWER GAIN (dB)
60
f, FREQUENCY (MHz)
Figure 8. Power Gain and Drain Efficiency versus Output Power
-40 SPECTRAL REGROWTH @ 400 kHz (dBc) -45 -50 TC = 85_C -55 -30_C -60 -65 -70 -75 0 10 20 30 40 50 Pout, OUTPUT POWER (WATTS) VDD = 28 Vdc, IDQ = 285 mA f = 940 MHz, EDGE Modulation SPECTRAL REGROWTH @ 600 kHz (dBc) 25_C -50 -55 -60 -65 -70 -75 -80 -85 0
Figure 9. EVM versus Frequency
VDD = 28 Vdc, IDQ = 285 mA f = 940 MHz, EDGE Modulation
25_C
TC = 85_C -30_C
10
20
30
40
50
Pout, OUTPUT POWER (WATTS)
Figure 10. Spectral Regrowth at 400 kHz versus Output Power
20 18 16 14 12 10 8 6 4 2 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 60 D EVM 85_C -30_C 85_C VDD = 28 Vdc, IDQ = 285 mA f = 940 MHz, EDGE Modulation TC = -30_C 25_C 65 59 D, DRAIN EFFICIENCY (%) 53 47 41 35 29 23 17 11 5 16 900 21 Gps, POWER GAIN (dB) 20 19 22
Figure 11. Spectral Regrowth at 600 kHz versus Output Power
EVM, ERROR VECTOR MAGNITUDE (% rms)
TC = -30_C 25_C
85_C 18 17 VDD = 28 Vdc Pout = 35 W CW IDQ = 300 mA 910 920 930 940 950 960 970 980
f, FREQUENCY (MHz)
Figure 12. EVM and Drain Efficiency versus Output Power
Figure 13. Power Gain versus Frequency
MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
20 Gain 15
0
109 108 MTTF (HOURS)
-6
GAIN (dB)
10
-12 IRL (dB)
107 106 105
5 IRL 0 VDD = 28 Vdc Pout = 9 dBm IDQ = 300 mA 750 850 950 1050 1150 1250 1350
-18
-24
-5 650
-30 1450
104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 35.5 W CW, and D = 57%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
f, FREQUENCY (MHz)
Figure 14. Broadband Frequency Response
Figure 15. MTTF versus Junction Temperature
GSM TEST SIGNAL
-10 -20 -30 -40 -50 (dB) -60 -70 -80 -90 -100 -110 Center 1.96 GHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz
Figure 16. EDGE Spectrum
MRFE6S9046NR1 MRFE6S9046GNR1 8 RF Device Data Freescale Semiconductor
Zo = 10
f = 980 MHz
Zload
f = 820 MHz
f = 980 MHz Zsource f = 820 MHz
VDD = 28 Vdc, IDQ = 285 mA, Pout = 17.8 W Avg. f (MHz) 820 840 860 880 900 920 940 960 980 Zsource W 5.03 - j7.29 4.46 - j6.69 4.00 - j6.11 3.62 - j5.64 3.29 - j5.18 3.03 - j4.75 2.80 - j4.36 2.61 - j3.99 2.46 - j3.64 Zload W 7.68 - j3.45 6.97 - j3.53 6.42 - j3.20 5.98 - j2.87 5.65 - j2.52 5.40 - j2.17 5.21 - j1.82 5.09 - j1.47 5.03 - j1.12
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance -- GSM EDGE Reference Design
MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
53 52 Pout, OUTPUT POWER (dBm) 51 50 49 48 47 46 45 44 43 23 24 25 26 VDD = 28 Vdc, IDQ = 300 mA, Pulsed CW 10 sec(on), 10% Duty Cycle, f = 920 MHz 27 28 29 30 31 32 33 P1dB = 47.57 dBm (57 W) Actual P3dB = 48.22 dBm (66 W) Ideal Pout, OUTPUT POWER (dBm) 52 51 50 49 48 47 46 45 44 43 42 23 24 25 26 VDD = 28 Vdc, IDQ = 300 mA, Pulsed CW 10 sec(on), 10% Duty Cycle, f = 960 MHz 27 28 29 30 31 32 33 P3dB = 47.89 dBm (62 W) Ideal
P1dB = 47.25 dBm (53 W) Actual
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource P1dB 7.83 - j2.01 Zload 1.25 - j0.52 P1dB
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource 3.79 - j6.51 Zload 4.30 - j2.52
Figure 18. Pulsed CW Output Power versus Input Power @ 28 V @ 920 MHz
Figure 19. Pulsed CW Output Power versus Input Power @ 28 V @ 960 MHz
MRFE6S9046NR1 MRFE6S9046GNR1 10 RF Device Data Freescale Semiconductor
R1 VBIAS
Z7 + C10 C5 Z9 Z6 C11
VSUPPLY
RF INPUT
Z10 Z1 C1 C2 Z2 Z3 C4 Z4 Z5
Z11
Z12
C6
Z13
Z14 C9
Z15
RF OUTPUT
Z8 C3 DUT C12
C7
C8
Z1 Z2 Z3 Z4 Z5 Z6* Z7 Z8*, Z9*
1.320 0.020 0.378 0.321 0.039 0.306 0.708 0.738
x 0.044 x 0.044 x 0.044 x 0.450 x 0.450 x 0.040 x 0.051 x 0.040
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z10 Z11 Z12 Z13 Z14 Z15 PCB
0.040 x 0.450 Microstrip 0.321 x 0.450 Microstrip 0.080 x 0.280 Microstrip 0.371 x 0.044 Microstrip 0.124 x 0.044 Microstrip 1.332 x 0.044 Microstrip Rogers R04350, 0.020, r = 3.66
* Line length includes microstrip bends
Figure 20. MRFE6S9046NR1(GNR1) Test Circuit Schematic -- Production Test Fixture
Table 7. MRFE6S9046NR1(GNR1) Test Circuit Component Designations and Values -- Production Test Fixture
Part C1, C9 C2 C3, C4 C5 C6, C7 C8 C10, C12 C11 R1 Description 56 pF Chip Capacitors 3.9 pF Chip Capacitor 6.8 pF Chip Capacitors 0.01 F Chip Capacitor 3.3 pF Chip Capacitors 5.1 pF Chip Capacitor 39 pF Chip Capacitors 470 F, 63 V Electrolytic Capacitor 4.7 K, 1/4 W Chip Resistor Part Number ATC600F560BT500XT ATC600F2R4BT500XT ATC600F6R8BT500XT C1825C103K1GAC ATC600F3R3BT500XT ATC600F4R7BT500XT ATC600F390BT500XT MCGPR63V477M13X26 - RH CRCW12064K70FKEA Manufacturer ATC ATC ATC Kemet ATC ATC ATC Multicomp Vishay
MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 11
VGS C10 C5 R1
C11 VDS
CUT OUT AREA
C1
C2
C4
C6 C7 C8
C3
C9
C12 VDS
MRFE6S8046GN/MRFE6S9046GN Rev. 0
Figure 21. MRFE6S9046NR1(GNR1) Test Circuit Component Layout -- Production Test Fixture
MRFE6S9046NR1 MRFE6S9046GNR1 12 RF Device Data Freescale Semiconductor
Zo = 10
f = 980 MHz Zload f = 820 MHz
f = 980 MHz
Zsource
f = 820 MHz
VDD = 28 Vdc, IDQ = 300 mA, Pout = 35.5 W CW f (MHz) 820 840 860 880 900 920 940 960 980 Zsource W 4.37 - j6.23 3.95 - j5.76 3.60 - j5.53 3.29 - j4.95 3.04 - j4.59 2.83 - j4.24 2.63 - j3.92 2.45 - j3.62 2.31 - j3.33 Zload W 6.55 - j3.27 6.26 - j2.98 6.02 - j2.72 5.86 - j2.48 5.74 - j2.24 5.68 - j1.98 5.64 - j1.74 5.65 - j1.49 5.70 - j1.26
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 22. Series Equivalent Source and Load Impedance -- Production Test Fixture
MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 13
PACKAGE DIMENSIONS
MRFE6S9046NR1 MRFE6S9046GNR1 14 RF Device Data Freescale Semiconductor
MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 15
MRFE6S9046NR1 MRFE6S9046GNR1 16 RF Device Data Freescale Semiconductor
MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 17
MRFE6S9046NR1 MRFE6S9046GNR1 18 RF Device Data Freescale Semiconductor
MRFE6S9046NR1 MRFE6S9046GNR1 RF Device Data Freescale Semiconductor 19
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date May 2009 * Initial Release of Data Sheet Description
MRFE6S9046NR1 MRFE6S9046GNR1 20 RF Device Data Freescale Semiconductor
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MRFE6S9046NR1 MRFE6S9046GNR1
Document Number: RF Device Data MRFE6S9046N Rev. 0, 5/2009 Freescale Semiconductor
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