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INTEGRATED CIRCUITS
DATA SHEET
TDA8559 Low-voltage stereo headphone amplifier
Product specification Supersedes data of 1996 Jan 02 File under Integrated Circuits, IC01 1997 Jun 27
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
FEATURES * Operating voltage from 1.9 to 30 V * Very low quiescent current * Low distortion * Few external components * Differential inputs * Usable as a mono amplifier in Bridge-Tied Load (BTL) or stereo Single-Ended (SE) * Single-ended mode without loudspeaker capacitor * Mute and standby mode * Short-circuit proof to ground, to supply voltage (<10 V) and across load * No switch on or switch off clicks * ESD protected on all pins. GENERAL DESCRIPTION APPLICATIONS * Portable telephones * Walk-mans * Portable audio * Mains fed equipment.
TDA8559
The TDA8559 is a stereo amplifier that operates over a wide supply voltage range from 1.9 to 30 V and consumes a very low quiescent current. This makes it suitable for battery fed applications (2 x 1.5 V cells). Because of an internal voltage buffer, this device can be used with or without a capacitor connected in series with the load. It can be applied as a headphone amplifier, but also as a mono amplifier with a small speaker (25 ), or as a line driver in mains applications.
QUICK REFERENCE DATA SYMBOL Supplies VP Iq(tot) Istb Po THD Gv fss Po THD Gv operating supply voltage total quiescent current standby supply current 1.9 - - 3 2.75 - 30 4 10 - 0.15 - 27 - - 0.1 - 33 V mA A PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Stereo application output power total harmonic distortion voltage gain small signal roll-off frequency -1 dB THD = 10% Po = 20 mW; fi = 1 kHz Po = 20 mW; fi = 10 kHz 30 - - 25 - 35 0.075 0.1 26 750 mW % % dB kHz
BTL application output power total harmonic distortion voltage gain THD = 10% Po = 70 mW; fi = 1 kHz Po = 70 mW; fi = 10 kHz 125 - - 31 140 0.05 0.2 32 mW % % dB
ORDERING INFORMATION TYPE NUMBER TDA8559 TDA8559T PACKAGE NAME DIP16 SO16 DESCRIPTION plastic dual in-line package; 16 leads (300 mil); long body plastic small outline package; 16 leads; body width 3.9 mm VERSION SOT38-1 SOT109-1
1997 Jun 27
2
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
BLOCK DIAGRAM
TDA8559
VP2
handbook, full pagewidth
VP1 16
15 STANDBY 1 REFERENCE
VP +IN1 -IN1 2 3 50 k MUTE MODE +IN2 -IN2 7 8 5 6 50 k INPUT LOGIC + - 50 k V/I + - OA 50 k 11 OUT2 + - V/I 50 k - + OA 14 OUT1
50 k DQC
VP 100 k SVRR 4 100 k
BUFFER
12
BUFFER
TDA8559
9,10 13
MGD115
n.c.
GND
Fig.1 Block diagram.
1997 Jun 27
3
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
PINNING SYMBOL STANDBY +IN1 -IN1 SVRR +IN2 -IN2 MUTE MODE n.c. n.c. OUT2 BUFFER GND OUT1 VP2 VP1 PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 DESCRIPTION standby select non-inverting input 1 inverting input 1 supply voltage ripple rejection non-inverting input 2 inverting input 2 mute select input mode select not connected not connected output 2 buffer output (0.5VP) ground output 1 high supply voltage low supply voltage V/I converters Fig.2 Pin configuration.
handbook, halfpage
TDA8559
STANDBY +IN1 -IN1 SVRR +IN2 -IN2 MUTE MODE
1 2 3 4
16 VP1 15 VP2 14 OUT1 13 GND
TDA8559
5 6 7 8
MGD114
12 BUFFER 11 OUT2 10 n.c. 9 n.c.
FUNCTIONAL DESCRIPTION The TDA8559 contains two amplifiers with differential inputs, a 0.5VP output buffer and a high supply voltage stabilizer. Each amplifier consists of a voltage-to-current converter (V/I), an output amplifier and a common dynamic quiescent current controller. The gain of each amplifier is internally fixed at 26 dB (= 20 x). The 0.5VP output can be used as a replacement for the single-ended capacitors. The two amplifiers can also be used as a mono amplifier in a BTL configuration thereby resulting in more output power. With three mode select pins, the device can be switched into the following modes: 1. Standby mode (IP < 10 A) 2. Mute mode 3. Operation mode, with two input selections (the input source is directly connected or connected via coupling capacitors at the input). The ripple rejection in the stereo application with a single-ended capacitor can be improved by connecting a capacitor between the 0.5VP capacitor pin and ground. The device is fully protected against short-circuiting of the output pins to ground, to the low supply voltage pin and across the load.
The V/I converters have a transconductance of 400 S. The inputs are completely symmetrical and the two amplifiers can be used in opposite phase. The mute mode causes the V/I converters to block the input signal. The input mode pin selects two applications in which the V/I converters can be used. The first application (input mode pin floating) is used with a supply voltage below 6 V. The input DC level is at ground level (the unused input pin connected to ground) and no input coupling capacitors are necessary. The maximum converter output current is sufficient to obtain an output swing of 3 V (peak). In the second application with a supply voltage greater than 6 V (input mode pin HIGH), the input mode pin is connected to VP. In this configuration (input DC level = 0.5VP + 0.6 V) the input source must be coupled with a capacitor and the two unused input pins must be connected via a capacitor to ground, to improve noise performance. This application has a higher quiescent current, because the maximum output current of the V/I converter is higher to obtain an output voltage swing of 9 V (peak).
1997 Jun 27
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Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
Output amplifiers The output amplifiers have a transresistance of 50 k, a bandwidth of approximately 750 kHz and a maximum output current of 100 mA. The mid-tap output voltage equals the voltage applied at the non-inverting pin of the output amplifier. This pin is connected to the output of the 0.5VP buffer. This reduces the distortion when the load is connected between an output amplifier and the buffer (because feedback is applied over the load). Buffer The buffer delivers 0.5VP to the output with a maximum output (sink and source) current of 200 mA (peak). Dynamic quiescent controller The Dynamic Quiescent Current controller (DQC) gives the advantage of low quiescent current and low distortion. When there are high frequencies in the output signal, the DQC will increase the quiescent current of the two output amplifiers and the buffer. This will reduce the cross-over distortion that normally occurs at high frequencies and low quiescent current. The DQC gives output currents that are linear with the amplitude and the frequency of the output signals. These currents control the quiescent current. Stabilizer
TDA8559
The TDA8559 has a voltage supply range from 1.9 to 30 V. This range is divided over two supply voltage pins. Pin 16 is 1.9 to 18 V (breakdown voltage of the process); this pin is preferred for supply voltages less than 18 V. Pin 15 is used for applications where VP is approximately 6 to 30 V. The stabilizer output is internally connected to the supply voltage pin 16. In the range from 6 to 18 V, the voltage drop to pin 16 is 1 V. In the range from 18 to 30 V the stabilizer output voltage (to pin 16) is approximately 17 V. Input logic The MUTE pin (pin 7) selects the mute mode of the V/I converters. LOW (TTL/CMOS) level is mute. A voltage between 0.5 V (low level) and 1.5 V (high level) causes a soft mute to operate (no plops). When pin 7 is floating or greater than 1.5 V it is in the operating condition. The input mode pin must be connected to VP when the supply voltage is greater than 6 V. The input mode logic raises the tail current of the V/I converters and enables the two buffers to bias the inputs of the V/I converters. Reference This circuit supplies all currents needed in this device. With the standby mode pin 1 (TTL/CMOS), it is possible to switch to the standby mode and reduce the total quiescent current to below 10 A.
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Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VP2(max) VP1(max) Vi(max) IORM Ptot Tamb Tstg Tvj tsc PARAMETER maximum supply voltage (pin 15) maximum supply voltage (pin 16) maximum input voltage peak output current total power dissipation operating ambient temperature storage temperature virtual junction temperature short-circuiting time VP < 10 V repetitive SO16 DIP16 CONDITIONS - - - - - - -40 -55 - - MIN.
TDA8559
MAX. 30 18 18 150 1.19 2.4 +85 +150 150 1 V V V
UNIT
mA W W C C C hour
QUALITY SPECIFICATION Quality in accordance with "SNW-FQ-611E", if this type is used as an audio amplifier. The number of the quality specification can be found in the "Quality Reference handbook". The handbook can be ordered using the code 9397 750 00192. THERMAL CHARACTERISTICS SYMBOL Rth j-a DIP16 SO16 CHARACTERISTICS VP = 3 V; Tamb = 25 C; fi = 1 kHz; unless otherwise specified. SYMBOL DC characteristics VP Iq(tot) Istb V1 V7 Ibias operating supply voltage total quiescent current standby supply current standby mode voltage mute mode voltage input bias current note 1 open load open load standby operating mute operating 1.9 - - 0 1.5 0 1.5 - 3 2.75 - - - - - 100 30 4 10 0.5 18 0.5 18 300 V mA A V V V V nA PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DESCRIPTION thermal resistance from junction to ambient in free air 52 105 K/W K/W VALUE UNIT
1997 Jun 27
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Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Single-ended stereo application (RL = 32 ) Po THD Gv fss cs Gv Vno Vno(mute) Vo(mute) Vmt Zi Vos SVRR output power total harmonic distortion voltage gain small signal roll-off frequency channel separation channel unbalance noise output voltage noise output voltage in mute output voltage in mute mid-tap voltage input impedance DC output offset voltage supply voltage ripple rejection note 5 note 6 note 3 note 3 note 4 -1 dB Rs = 5 k THD = 10% Po = 20 mW; fi = 1 kHz; note 2 Po = 20 mW; fi = 10 kHz; note 2 30 - - 25 - 40 - - - - 1.4 75 - 45 35 0.075 0.1 26 750 - - 70 20 - 1.5 100 - 55 - 0.15 - 27 - - 1 85 30 30 1.6 125 100 - - 0.1 - 33 - 120 40 40 150 - 61 mW % % dB kHz dB dB V V V V k mV dB
BTL application (RL = 25 ) Po THD Gv fss Vno Vno(mute) Vo(mute) Vos SVRR Zi output power total harmonic distortion voltage gain small signal roll-off frequency noise output voltage noise output voltage in mute output voltage in mute DC output offset voltage supply voltage ripple rejection input impedance -1 dB note 3 note 3 note 4 note 7 note 6 THD = 10% Po = 70 mW; fi = 1 kHz; note Po = 70 mW; fi = 10 kHz; note 2 125 - - 31 - - - - - 39 39 140 0.05 0.1 32 750 100 25 - - 49 50 - mW % % dB kHz V V V mv dB k
Line driver application (RL 1 k) Vo Notes 1. The supply voltage range at pin VP1 is from 1.9 to 18 V. Pin VP2 is used for the voltage range from 6 to 30 V. 2. Measured with low-pass filter 30 kHz. 3. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz, unweighted. Rs = 5 k. 4. RMS output voltage in mute is measured with Vi = 200 mV (RMS); f = 1 kHz. 5. DC output offset voltage is measured between the signal output and the 0.5VP output. 6. The ripple rejection is measured with a ripple voltage of 200 mV (RMS) applied to the positive supply rail (Rs = 0 k). 7. DC output offset voltage is measured between the two signal outputs. line output voltage 0.1 2.9 V
1997 Jun 27
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Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
APPLICATION INFORMATION General For applications with a maximum supply voltage of 6 V (input mode LOW) the input pins need a DC path to ground (see Figs 3 and 4). For applications with supply voltages in the range from 6 to 18 V (input mode HIGH) the input DC level is 0.5VP + 0.6 V. In this situation the input configurations illustrated in Figs 5 and 6 have to be used. The capacitor Cb is recommended for stability improvement. The value may vary between 10 and 100 nF. This capacitor should be placed close to the IC between pin 12 and pin 13. Heatsink design The standard application is stereo headphone single-ended with a 32 load impedance to buffer (see Fig.9). The headphone amplifier can deliver a peak output current of 150 mA into the load. For the DIP16 envelope Rth j-amb = 52 K/W; the maximum sine wave power dissipation for Tamb = 25 C is: 150 - 25 2.4 W = --------------------52 For Tamb = 60 C the maximum total power dissipation is: 150 - 60 1.7 W = --------------------52 For the SO16 envelope Rth j-amb = 105 K/W; the maximum sinewave power dissipation for Tamb = 25 C is: 150 - 25 1.2 W = --------------------105 For Tamb = 60 C the maximum total power dissipation is: 150 - 60 0.85 W = --------------------105 Test conditions
TDA8559
Tamb = 25 C; unless otherwise specified: VP = 3 V, f = 1 kHz, RL = 32 , Gain = 26 dB, low input mode, band-pass filter: 22 Hz to 30 kHz. The total harmonic distortion as a function of frequency was measured with low-pass filter of 80 kHz. The quiescent current has been measured without any load impedance. In applications with coupling capacitors towards the load, an electrolytic capacitor has to be connected to pin 4 (SVRR). * The graphs for the single-ended application have been measured with the application illustrated in Fig.9; input configuration for input mode low (Fig.4) and input configuration for input mode high (Fig.6). * The graphs for the BTL application `input mode low' have been measured with the application circuit illustrated in Fig.11 and the input configuration illustrated in Fig.4. * The graphs for the line-driver application have been measured with the application circuit illustrated in Fig.13 and the input configuration illustrated in Fig.6; input mode high. Input configurations The IC can be applied in two ways, `input mode low' and `input mode high'. This can be selected by the input mode at pin 8: 1. Input mode low: pin 8 floating: The DC level of the input pins has to be between 0 V and (VP - 1.8 V). A DC path to ground is needed. The maximum output voltage is approximately 2.1 V (RMS). Input configurations illustrated in Figs 3 and 4 should be used. 2. Input mode high: pin 8 is connected to VP: This mode is intended for supply voltages >6 V. It can deliver a maximum output voltage of approximately 6 V (RMS) at THD = 0.5%. The DC voltage level of the input pins is (0.5VP + 0.6 V). Coupling capacitors are necessary. Input configurations illustrated in Figs 5 and 6 should be used.
1997 Jun 27
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Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
2.2 F pins 2 and 5 VIN 5 k INPUT pins 3 and 6
MGD123
handbook, halfpage
pins 2 and 5 VIN INPUT pins 3 and 6
MGD124
Fig.3
Input configuration; with input capacitor (VP < 6 V).
Fig.4
Input configuration; without input capacitor (VP < 6 V).
pin 2 100 nF 220 nF pins 2 and 5 VIN INPUT 220 nF pins 3 and 6
MGD125
VIN
pin 3
220 nF VIN 100 nF
pin 6
pin 5
MGD126
Fig.6 Fig.5 Input configuration (VP > 6 V).
Input configuration (at VP > 6 V, combined negative inputs).
Standby/mute * The standby mode (V1 < 0.5 V) is intended for power saving purpose. Then the total quiescent current is <10 A. * To avoid `pop-noise' during switch-on or switch-off the IC can be muted (V7 < 0.5 V). This can be achieved by a `soft-mute' circuit or by direct control from a microcontroller.
VP 620 k 7 220 nF mute
MGL135
47 k
Fig.7 Soft mute.
1997 Jun 27
9
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
Application 1: SE with loudspeaker capacitor (see Fig.8) The value of capacitor Cr influences the behaviour of the Supply Voltage Ripple Rejection (SVRR) at low frequencies; increasing the value of Cr increases the performance of the SVRR. Application 2: SE to buffer (without loudspeaker capacitor) (see Fig.9) This is the basic headphone application. The advantage of this application with respect to application 1, is that it needs only one external component (Cb) in the event of stability problems. Application 3: Improved SE to buffer (without loudspeaker capacitor) (see Fig.10) This application is an improved configuration of application 2. The distinction between the two is connecting the loads in opposite phase. This lowers the average current through the SE buffer. It should be noted that a headphone cannot be used because the load requires floating terminals. Application 4: Bridge tied load mono amplifier (see Fig.11) This configuration delivers four times the output power of the SE application with the same supply and load conditions. The capacitor Cr is not required. Application 5: Line driver application 1.9 V < VP < 6 V (see Fig.12) The TDA8559 delivers a virtual rail-to-rail output voltage and is also usable in a low voltage environment, as a line driver. In this application the input needs a DC path to ground, input configurations illustrated in Figs 3 and 4 should be used. The value of capacitor Cr influences the behaviour of the SVRR at low frequencies; increasing the value of Cr increases the performance of the SVRR.
TDA8559
Application 6: Line driver application 6 V < VP < 18 V (see Fig.13) The TDA8559T delivers a virtual rail-to-rail output voltage. Because the input mode has to be high, the input configurations illustrated in Figs 5 and 6 should be used. This application can also be used for headphone application, however, due to the limited output current and the limited output power at the headphone, series resistors have to be used between the output pins and the load. The value of capacitor Cr influences the behaviour of the SVRR at low frequencies; increasing the value of Cr increases the performance of the SVRR. Application 7: Line driver application 6V < VP < 30 V (see Fig.14) With the supply voltage connected to pin 15 it is possible to use the head amplifier above the maximum of 18 V to pin 16. The internal supply voltage will be reduced to a maximum of approximately 17 V. This will be convenient in applications where the supply voltage is higher than 18 V, however an output voltage swing that reaches the higher supply voltage is not required. the input configurations illustrated in Figs 5 and 6 should be used. This application can also be used for headphone applications. However, due to the limited output current, series resistors have to be used between the output pins and the load.
1997 Jun 27
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Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
handbook, full pagewidth
VP2 15 STANDBY 1 REFERENCE
VP1 16
+VP 100 nF 100 F
VP 2 IN1 3 50 k MUTE MODE 7 8 5 IN2 6 50 k INPUT LOGIC + - 50 k V/I + - OA 50 k 11 OUT2 32 - + - V/I 50 k - + OA 14 OUT1 220 F + -
50 k DQC
32
220 F +
VP 100 k SVRR 4 22 F Cr 100 k
BUFFER
12 BUFFER
TDA8559
13
Cb
MGD116
GND
Fig.8 Application 1: single-ended with loudspeaker capacitor.
1997 Jun 27
11
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
handbook, full pagewidth
VP2 15 STANDBY 1 REFERENCE
VP1 16
+VP 100 nF 100 F
VP 2 IN1 3 50 k MUTE MODE 7 8 5 IN2 6 50 k INPUT LOGIC + - 50 k V/I + - OA 50 k 11 OUT2 32 + - + - V/I 50 k - + OA 14 OUT1 + -
32
50 k DQC
VP 100 k SVRR 4 100 k
BUFFER
12 BUFFER
TDA8559
13
Cb
MGD117
GND
Fig.9 Application 2: single-ended to buffer (without loudspeaker capacitor).
1997 Jun 27
12
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
handbook, full pagewidth
VP2 15 STANDBY 1 REFERENCE
VP1 16
+VP 100 nF 100 F
VP 2 IN1 3 50 k MUTE MODE 7 8 5 IN2 6 50 k INPUT LOGIC + - 50 k V/I + - OA 50 k 11 OUT2 - + + - V/I 50 k - + OA 14 OUT1 + - 32
50 k DQC
32
VP 100 k SVRR 4 100 k
BUFFER
12 BUFFER
TDA8559
13
Cb
MGD118
GND
Fig.10 Application 3: Improved single-ended to buffer (without loudspeaker capacitor).
1997 Jun 27
13
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
handbook, full pagewidth
VP2 15 STANDBY 1 REFERENCE
VP1 16
+VP 100 nF 100 F
VP 2 IN1 3 50 k MUTE MODE 7 8 5 IN2 6 50 k INPUT LOGIC + - 50 k V/I + - OA 50 k 11 OUT2 + - V/I 50 k - + OA 14 OUT1
50 k DQC 25
VP 100 k SVRR 4 100 k
BUFFER
12 BUFFER
TDA8559
13
Cb
GND
MGD119
Fig.11 Application 4: BTL mono amplifier.
1997 Jun 27
14
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
handbook, full pagewidth
VP2 15 STANDBY 1 REFERENCE
VP1 16
+VP 100 nF 100 F
VP 2 IN1 3 50 k MUTE MODE 7 8 5 IN2 6 50 k INPUT LOGIC + - 50 k V/I + - OA 50 k 11 OUT2 10 F 1 k + - V/I 50 k - + OA 14 OUT1 10 F 1 k
50 k DQC
VP 100 k SVRR 4 22 F Cr 100 k
BUFFER
12 BUFFER
TDA8559
13
Cb
MGD120
GND
Fig.12 Application 5: Line driver application (VP = 1.9 to 6 V).
1997 Jun 27
15
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
handbook, full pagewidth
VP2 15 STANDBY 1 100 nF IN1 3 50 k 220 nF 7 MUTE MODE 5 IN2 100 nF 6 50 k + - 50 k V/I 8 INPUT LOGIC + - OA 50 k REFERENCE
VP1 16
+VP 100 nF 100 F
VP 2 + - V/I 50 k - + OA 14 OUT1 10 F 1 k
50 k DQC
11 OUT2 10 F 1 k
VP 100 k SVRR 4 22 F Cr 100 k
BUFFER
12 BUFFER
TDA8559
13
Cb
MGD121
GND
Fig.13 Application 6: Line driver application (VP = 6 to 18 V).
1997 Jun 27
16
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
handbook, full pagewidth
+VP VP2 15 STANDBY 1 100 nF IN1 3 50 k REFERENCE VP 2 + - V/I 50 k - + OA 14 OUT1 10 F + - VP1 16 100 nF 100 F
50 k DQC INPUT LOGIC + - V/I + - OA 50 k 11 OUT2 10 F
220 nF
7 MUTE MODE 5 IN2 100 nF 6 50 k 8
POWER AMPLIFIER + -
50 k
VP 100 k SVRR 4 100 k
BUFFER
12 BUFFER
TDA8559
13
Cb
MGD122
GND
Fig.14 Application 7: Line driver application (VP = 6 to 30 V).
1997 Jun 27
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Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
Response curves for low input mode
TDA8559
handbook, halfpage
10
MDA089
Iq
handbook, halfpage
20 VP1 (V) 16
MDA090
(mA) 8
6
(1)
12
4
(2)
8
2
4
0 0 4 8 12 16 VP (V) 20
0 0 10 20 VP2 (V) 30
(1) High mode. (2) Low mode.
Fig.15 Iq as a function of VP (stereo headphone).
Fig.16 VP1 as a function of VP2 (stereo headphone).
102 handbook, halfpage THD (%) 10
MDA091
handbook, halfpage
1
MDA092
THD (%)
(1)
(2)
1
10-1
(1) (2)
10-1
10-2 10-3
10-2
10-1
Po (W)
1
10-2 10
102
103
104
f (Hz)
105
f = 1 kHz. (1) VP = 3 V, RL = 32 . (2) VP = 5 V, RL = 32 .
RL = 32 . (1) VP = 5 V, THD = 50 mW. (2) VP = 3 V, THD = 20 mW.
Fig.17 THD as a function of Po (stereo headphone).
Fig.18 THD as a function of frequency (stereo headphone).
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Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
10-2 handbook, halfpage Iq (A)
MDA093
handbook, halfpage
1 Vo
MDA094
10-3
(V) 10-1
10-4
(1)
(2)
(3)
10-2
(1) (2)
10-5
10-3
10-6
10-4
10-7
0
1
2
Vstb (V)
3
10-5
0
0.5
1
1.5
2 2.5 Vmute (V)
(1) VP = 12 V. (2) VP = 3 and 6 V. (3) VP = 3, 6 and 12 V.
(1) VP = 3 V. (2) VP = 12 V.
Fig.19 Iq as a function of Vstb (stereo headphone).
Fig.20 Vo as a function of Vmute (stereo headphone).
handbook, halfpage
0
MDA095
cs (dB) -20
handbook, halfpage
1
MDA096
Gr (dB) 0.5
-40
0
-60
-0.5
-80 10
102
103
104
f (Hz)
105
-1 10
102
103
104
f (Hz)
105
VP = 3 V, Vi = 20 mV.
VP = 3 V, Vi = 20 mV.
Fig.21 Channel separation as a function of frequency (stereo headphone).
Fig.22 Channel unbalance as a function of frequency (stereo headphone).
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Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
handbook, halfpage
0
MDA097
handbook, halfpage
0.4
MDA098
SVRR (dB) -20
Po (W) 0.3
-40
0.2
(1)
(2)
-60
0.1
-80 10
102
103
104
f (Hz)
105
0 0 4 8 VP (V) 12
VP = 3 V, Rs = 0 , Vr = 0.2 V (RMS).
(1) RL = 32 , THD = 10%. (2) RL = 32 , THD = 0.5%.
Fig.23 SVRR as a function of frequency (stereo headphone).
Fig.24 Po as a function of VP (stereo headphone).
handbook, halfpage
1.5
MDA099
102 handbook, halfpage THD (%) 10
MDA130
P (W)
1
(1) (2)
1
(1) (2)
0.5 10-1
0 0 4 8 VP (V) 12
10-2 10-3
10-2
10-1
Po (W)
1
(1) RL = 25 . (2) RL = 32 .
Fig.25 Total worst case power dissipation as a function of supply voltage (SE) (stereo headphone).
f = 1 kHz. (1) VP = 3 V, RL = 25 . (2) VP = 5 V, RL = 25 .
Fig.26 THD as a function of Po (BTL mono).
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Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
handbook, halfpage
1
MDA131
handbook, halfpage
0
MDA132
SVRR (dB) THD (%) -20
10-1
(1)
-40
(2)
-60
10-2 10
102
103
104
f (Hz)
105
-80 10
102
103
104
f (Hz)
105
(1) VP = 3 V, RL = 25 , THD = 70 mW. (2) VP = 5 V, RL = 25 , THD = 150 mW.
VP = 3 V, Rs = 0 , Vr = 0.2 V (RMS).
Fig.27 THD as a function of frequency (BTL mono).
Fig.28 SVRR as a function of frequency (BTL mono).
handbook, halfpage
1
MDA133
handbook, halfpage
1.6
MDA134
Po (W) 0.75
P (W) 1.2
(1)
(2)
0.5
0.8
(1) (2)
0.25
0.4
0 0 4 8 VP (V) 12
0 0 4 8 VP (V) 12
(1) THD = 10%; RL = 25 . (2) THD = 0.5%, RL = 25 .
(1) RL = 25 . (2) RL = 32 .
Fig.29 Po as a function of supply voltage (BTL mono).
Fig.30 Total worst case power dissipation as a function of supply voltage (BTL mono).
1997 Jun 27
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Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
Response curves for high input mode
MDA119
TDA8559
handbook, halfpage
0.8
handbook, halfpage
Po (W) 0.6
2 P (W) 1.6
MDA120
(1)
(2)
1.2 0.4
(1) (2)
0.8
0.2
0.4
0 0 4 8 12 VP (V) 16
0 0 (1) RL = 25 . (2) RL = 32 . 4 8 12 VP (V) 16
(1) RL = 32 , THD = 10%. (2) RL = 32 , THD = 0.5%.
Fig.31 Po as a function of VP (SE) (stereo headphone).
Fig.32 Total worst case power dissipation as a function of supply voltage (SE) (stereo headphone).
102 handbook, halfpage THD (%) 10
MDA121
handbook, halfpage
1
MDA122
THD (%)
1
10-1
(1) (2)
10-1
10-2 10-3
10-2
10-1
Po (W)
1
10-2 10
102
103
104
f (Hz)
105
VP = 10 V, RL = 32. (1) Po = 100 mW. (2) Po = 50 mW. VP = 10 V, RL = 32 , f = 1 kHz
Fig.33 THD as a function of Po (stereo headphone).
Fig.34 THD as a function of frequency (stereo headphone).
1997 Jun 27
22
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
handbook, halfpage
0
MDA123
handbook, halfpage
0
MDA124
cs (dB) -20
SVRR (dB) -20
-40
-40
-60
-60
-80 10
102
103
104
f (Hz)
105
-80 10
102
103
104
f (Hz)
105
VP = 10 V, Vi = 20 mV.
VP = 10 V, Rs = 0 , Vr = 0.2 V (RMS).
Fig.35 Channel separation as a function of frequency (stereo headphone).
Fig.36 SVRR as a function of frequency (stereo headphone).
102 handbook, halfpage THD (%) 10
MDA125
handbook, halfpage
1
MDA126
THD (%)
1
(1)
(2)
10-1
10-1
10-2 10-2
10-1
1
Vo (V)
10
10-2 10
102
103
104
f (Hz)
105
(1) VP = 12 V, RL = 1 k. (2) VP = 18 V, RL = 1 k.
VP = 12 V; Vo = 1 V.
Fig.37 THD as a function of Vo (stereo line driver).
Fig.38 THD as a function of frequency (stereo line driver).
1997 Jun 27
23
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
handbook, halfpage
0
MDA127
handbook, halfpage
0
MDA128
(dB) -20
SVRR (dB) -20
-40
-40
-60
-60
-80 10
102
103
104
f (Hz)
105
-80 10
102
103
104
f (Hz)
105
VP = 12 V; Vi = 20 mV.
VP = 12 V; Rs = 0 ; Vr = 0.2 V (RMS).
Fig.39 Channel separation as a function of frequency (stereo line driver).
Fig.40 SVRR as a function of frequency (stereo line driver).
handbook, halfpage
10 Vo
MDA129
(V) 8
6
(1)
4
(2)
2
0 0 4 8 12 16 VP (V) 20
(1) THD = 10%, RL = 1 k. (2) THD = 0.5%, RL = 1 k.
Fig.41 Vo as a function of VP (stereo line driver).
1997 Jun 27
24
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
INTERNAL PIN CONFIGURATION SYMBOL STANDBY PIN 1 EQUIVALENT CIRCUIT
VP1
TDA8559
10 k
12 k
MGD110
+IN1, -IN1, +IN2 and -IN2
2, 3, 5 and 6
VP1
MGD106
SVRR
4
VP1
50 k
50 k
50 k
50 k
MGD107
1997 Jun 27
25
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
SYMBOL MUTE
PIN 7
EQUIVALENT CIRCUIT
VP1
MGD112
INPUT MODE
8
VP1
1 k
250 k 5 k
MGD113
OUT2 and OUT1
11 and 14
VP1
100
50
buffer output
MGD108
1997 Jun 27
26
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
SYMBOL BUFFER
PIN 12
EQUIVALENT CIRCUIT
VP1
buffer output
MGD109
VP2 and VP1
15 and 16
VP2
VP1
2 k
MGD111
1997 Jun 27
27
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
PACKAGE OUTLINES DIP16: plastic dual in-line package; 16 leads (300 mil); long body
TDA8559
SOT38-1
D seating plane
ME
A2
A
L
A1
c Z e b1 b 16 9 MH wM (e 1)
pin 1 index E
1
8
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 4.7 0.19 A1 min. 0.51 0.020 A2 max. 3.7 0.15 b 1.40 1.14 0.055 0.045 b1 0.53 0.38 0.021 0.015 c 0.32 0.23 0.013 0.009 D (1) 21.8 21.4 0.86 0.84 E (1) 6.48 6.20 0.26 0.24 e 2.54 0.10 e1 7.62 0.30 L 3.9 3.4 0.15 0.13 ME 8.25 7.80 0.32 0.31 MH 9.5 8.3 0.37 0.33 w 0.254 0.01 Z (1) max. 2.2 0.087
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT38-1 REFERENCES IEC 050G09 JEDEC MO-001AE EIAJ EUROPEAN PROJECTION
ISSUE DATE 92-10-02 95-01-19
1997 Jun 27
28
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A X
c y HE vMA
Z 16 9
Q A2 A1 pin 1 index Lp 1 e bp 8 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 10.0 9.8 E (1) 4.0 3.8 0.16 0.15 e 1.27 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 0.039 0.016 Q 0.7 0.6 0.028 0.020 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.7 0.3
0.010 0.057 0.069 0.004 0.049
0.019 0.0100 0.39 0.014 0.0075 0.38
0.244 0.050 0.041 0.228
0.028 0.004 0.012
8 0o
o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT109-1 REFERENCES IEC 076E07S JEDEC MS-012AC EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-01-23 97-05-22
1997 Jun 27
29
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). DIP SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. REPAIRING SOLDERED JOINTS Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. SO REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.
TDA8559
Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. WAVE SOLDERING Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1997 Jun 27
30
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TDA8559
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Jun 27
31
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
547027/1200/02/pp32
Date of release: 1997 Jun 27
Document order number:
9397 750 02066

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