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| ON Semiconductort SWITCHMODETM NPN Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state-of-the-art die designed for use in 220 V line-operated SWITCHMODE Power supplies and electronic ballast ("light ballast"). These high voltage/high speed transistors exhibit the following main features: MJE18009 MJF18009 POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS * Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE Fast Switching No Coil Required in Base Circuit for Turn-Off (No Current Tail) Full Characterization at 125_C ON Semiconductor "6 SIGMA" Philosophy Provides Tight and Reproducible Parametric Distributions Specified Dynamic Saturation Data Two Package Choices: Standard TO-220 or Isolated TO-220 * * * * II IIIIIIIIIIIIIIIIIIIIIII I I II I II III I I I IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I I I I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I II I I II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II I I I I I II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol VCEO VCES MJE18009 MJF18009 450 Unit Vdc Vdc Vdc Vdc Adc Adc Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Voltage 1000 1000 9 VCBO VEBO IC ICM IB IBM PD Collector Current -- Continuous -- Peak (1) Base Current -- Continuous -- Peak (1) 10 20 4 8 *Total Device Dissipation @ TC = 25C *Derate above 25_C Operating and Storage Temperature 150 1.2 50 0.4 Watt W/_C _C V TJ, Tstg VISOL1 VISOL2 VISOL3 -65 to 150 RMS Isolation Voltage (2) Per Figure 22 (1s, 25C, Humidity 30%) Per Figure 23 Per Figure 24 TC = 25C 4500 3500 1500 CASE 221A-06 TO-220AB THERMAL CHARACTERISTICS Rating Symbol RJC RJA TL MJE18009 MJF18009 0.83 62.5 2.5 62.5 Unit Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds _C/W _C CASE 221D-02 TO-220 FULLPACK 260 (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. (2) Proper strike and creepage distance must be provided. (c) Semiconductor Components Industries, LLC, 2001 1 April, 2001 - Rev. 2 Publication Order Number: MJE18009/D II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I II I I I I III I I I I I I I I I II I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII IIIIIII I I II I I I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I II I I I I II I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I I II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I II I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I II I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) DYNAMIC SATURATION VOLTAGE DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Input Capacitance (VEB = 8 Vdc) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) Dynamic Saturation Voltage: Determined 1 s and 3 s respectively after rising IB1 reaches 90% of final IB1 Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Collector Cutoff Current (VCE = 800 V, VEB = 0) DC Current Gain (IC = 1.5 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 3 Adc, IB = 0.3 Adc) Base-Emitter Saturation Voltage (IC = 3 Adc, IB = 0.3 Adc) (IC = 5 Adc, IB = 1 Adc) (IC = 7 Adc, IB = 1.4 Adc) Emitter-Cutoff Current (VEB = 9 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) (IC = 10 mAdc, VCE = 5 Vdc) (IC = 7 Adc, VCE = 1 Vdc) (IC = 5 Adc, VCE = 1 Vdc) (IC = 7 Adc, IB = 1.4 Adc) (IC = 5 Adc, IB = 1 Adc) IC = 3 Adc IB1 = 300 mAdc VCC = 300 V Characteristic @ 1 s @ TC = 25C IC = 7 Adc @ TC = 125C IB1 = 1.4 Adc 14 @ 3 s @ VCC = 300 VIIII TC = 25C @ TC = 125C @ 3 s @ 1 s MJE18009 MJF18009 http://onsemi.com @ TC = 25C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 125C VCEO(sus) VCE(dsat) Symbol VCE(sat) VBE(sat) ICEO IEBO ICES Cob hFE Cib fT Min 450 14 10 10 8 7 5 2750 8 13.5 0.35 0.4 13 11.5 Typ 150 0.3 0.3 0.8 0.9 0.9 2 2.7 0.3 0.3 10 7.5 15 21 29 12 25 4 8 3500 0.6 0.65 1.1 1.15 1.25 Max 0.6 0.65 100 100 500 100 100 200 0.7 0.9 34 Adc Adc Adc MHz Unit Vdc Vdc Vdc pF pF -- -- -- V 2 II I IIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I III I I I I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I I II I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I I I III I I I I I I I II I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I I II I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I I II I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII II I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I II I I I I II I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 s) Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time IC = 7 Adc, IB1 = 1.4 Adc IB2 = 3.5 Adc 35 VCC = 300 Vdc IC = 3 Adc, IB1 = 0.3 Adc IB2 = 1.5 Adc 15 VCC = 300 Vdc Characteristic IC = 5 Adc, IB1 = 1 Adc IB2 = 2.5 Adc 25 VCC = 300 Vdc IC = 7 Adc IB1 = 1.4 Adc IB2 = 3.5 Adc IC = 5 Adc IB1 = 1 Adc IB2 = 2.5 Adc IC = 3 Adc IB1 = 0.3 Adc IB2 = 1.5 Adc MJE18009 MJF18009 http://onsemi.com @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C Symbol ton ton ton toff toff toff tc ts tc ts tc ts tf tf tf Min 1.75 2.25 1.75 2.1 1.28 1.6 Typ 110 135 110 125 225 300 105 150 260 300 250 300 175 500 120 350 220 220 2.4 3.1 2.2 2.6 2 2.6 2.75 2.75 Max 350 200 350 200 350 200 300 250 300 3.5 2.5 2.5 2.5 Unit s s s s s s ns ns ns ns ns ns ns ns ns 3 MJE18009 MJF18009 TYPICAL STATIC CHARACTERISTICS 100 VCE = 1 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125C TJ = 25C TJ = 125C 10 100 VCE = 5 V 10 TJ = -20C TJ = 25C 1 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) 100 1 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volt 2 TJ = 25C VCE , VOLTAGE (VOLTS) 5A 3A 1 IC = 1 A VCE , VOLTAGE (VOLTS) 8A 10 1 IC/IB = 10 0.1 TJ = 125C TJ = 25C 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 0.01 0.01 IC/IB = 5 Figure 3. Collector Saturation Region Figure 4. Collector-Emitter Saturation Voltage 1.1 IC/IB = 5 IC/IB = 10 VBE , VOLTAGE (VOLTS) C, CAPACITANCE (pF) 0.9 TJ = -20C 0.7 TJ = 25C 0.5 TJ = 125C 0.3 0.01 1 0.1 IC, COLLECTOR CURRENT (AMPS) 10 10 Cib 1 TJ = 25C f(test) = 1 MHz 0.1 Cob 0.01 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 5. Base-Emitter Saturation Region Figure 6. Capacitance http://onsemi.com 4 MJE18009 MJF18009 TYPICAL SWITCHING CHARACTERISTICS 2 IBoff = IC/2 VCC = 300 V PW = 20 s t, TIME ( s) TJ = 125C TJ = 25C 5 4 t, TIME ( s) 3 2 1 0 IC/IB = 5 1 7 4 IC, COLLECTOR CURRENT (AMPS) 10 0 TJ = 125C TJ = 25C 1 7 4 IC, COLLECTOR CURRENT (AMPS) 10 IBoff = IC/2 VCC = 300 V PW = 20 s IC/IB = 5 1 IC/IB = 10 IC/IB = 10 Figure 7. Resistive Switching, ton Figure 8. Resistive Switching, toff 5 4 3 2 1 0 IC/IB = 5 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 6 5 t si , STORAGE TIME (s) 4 3 2 1 IC/IB = 10 9 10 IC = 6.5 A 0 3 5 7 TJ = 125C TJ = 25C IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H IC = 3 A t, TIME (ns) TJ = 125C TJ = 25C 1 2 3 5 6 7 8 4 IC, COLLECTOR CURRENT (AMPS) 9 11 hFE, FORCED GAIN 13 15 Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time 350 300 250 200 150 100 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C TJ = 25C tc t, TIME (ns) 300 200 tc IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H t, TIME (ns) 100 tfi TJ = 125C TJ = 25C 1 2 3 tfi 1 3 5 9 7 IC, COLLECTOR CURRENT (AMPS) 11 0 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) 9 10 Figure 11. Inductive Switching, tc and tfi @ IC/IB = 5 http://onsemi.com 5 Figure 12. Inductive Switching, tc and tfi @ IC/IB = 10 MJE18009 MJF18009 TYPICAL SWITCHING CHARACTERISTICS 160 140 t fi , FALL TIME (ns) 120 100 80 60 40 3 IC = 6.5 A IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 4 5 6 7 8 9 10 11 hFE, FORCED GAIN 12 13 14 15 IC = 3 A TJ = 125C TJ = 25C t c , CROSSOVER TIME (ns) 400 IC = 3 A IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 300 200 TJ = 125C TJ = 25C 3 5 7 IC = 6.5 A 100 9 11 hFE, FORCED GAIN 13 15 Figure 13. Inductive Fall Time Figure 14. Inductive Crossover Time TYPICAL CHARACTERISTICS 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 5 ms 10 1 ms 10 s EXTENDED SOA MJE18009-DC 1 s 12 TC 125C GAIN 4 LC = 500 H 8 1 4 -5 V 0V 200 -1.5 V 1100 0.1 MJF18009-DC 0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 0 500 800 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe Operating Area http://onsemi.com 6 MJE18009 MJF18009 1.0 0.8 0.6 0.4 0.2 0 THERMAL DERATING 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 SECOND BREAKDOWN DERATING Figure 17. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figures 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base-to-emitter junction reverse biased. The safe level is specified as a reverse- biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. POWER DERATING FACTOR TYPICAL SWITCHING CHARACTERISTICS (IB = IC/2 FOR ALL CURVES) 10 VCE dyn 1 s dyn 3 s 0V 9 8 7 6 5 4 90% IB 1 s IB 3 s TIME 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 Vclamp 10% Vclamp tc IC tsi 90% IC tfi 10% IC Figure 18. Dynamic Saturation Voltage Measurements Figure 19. Inductive Switching Measurements http://onsemi.com 7 MJE18009 MJF18009 Table 1. Inductive Load Switching Drive Circuit +15 V 1 F 100 3W MTP8P10 100 F VCE PEAK MTP8P10 MPF930 MUR105 RB1 Iout A 50 COMMON 500 F 150 3W MJE210 MTP12N10 RB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA VCE IB1 IB IB2 Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 IC PEAK 150 3W MPF930 +10 V 1 F -Voff http://onsemi.com 8 MJE18009 MJF18009 TYPICAL THERMAL RESPONSE (IB = IC/2 FOR ALL CURVES) 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.1 1 t, TIME (ms) t1 P(pk) RJC(t) = r(t) RJC RJC = 0.83C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) t2 DUTY CYCLE, D = t1/t2 10 0.01 0.01 100 1000 Figure 20. Typical Thermal Response (ZJC(t)) for MJE18009 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 t1 P(pk) RJC(t) = r(t) RJC RJC = 2.5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 1 10 t, TIME (ms) 100 1000 0.01 0.01 10000 100000 Figure 21. Typical Thermal Response (ZJC(t)) for MJF18009 http://onsemi.com 9 MJE18009 MJF18009 TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE LEADS CLIP MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS 0.107 MIN 0.107 MIN HEATSINK 0.110 MIN HEATSINK HEATSINK Figure 22. Clip Mounting Position for Isolation Test Number 1 Figure 23. Clip Mounting Position Figure 24. Screw Mounting Position for Isolation Test Number 2 for Isolation Test Number 3 *Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION** 4-40 SCREW PLAIN WASHER CLIP HEATSINK COMPRESSION WASHER NUT HEATSINK Figure 25a. Screw-Mounted Figure 25b. Clip-Mounted Figure 25. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. http://onsemi.com 10 MJE18009 MJF18009 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 F T S C Q 123 A U K H Z L V G D N R J CASE 221D-02 (ISOLATED TO-220 TYPE) UL RECOGNIZED: FILE #E69369 ISSUE D -T- F Q A 123 SEATING PLANE -B- C S U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES DIM MIN MAX A 0.621 0.629 B 0.394 0.402 C 0.181 0.189 D 0.026 0.034 F 0.121 0.129 G 0.100 BSC H 0.123 0.129 J 0.018 0.025 K 0.500 0.562 L 0.045 0.060 N 0.200 BSC Q 0.126 0.134 R 0.107 0.111 S 0.096 0.104 U 0.259 0.267 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 H K -Y- G N L D 3 PL M J R 0.25 (0.010) B M Y http://onsemi.com 11 MJE18009 MJF18009 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 1-303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 MJE18009/D |
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