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| ON Semiconductort General Purpose Transistor PNP Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value -40 -40 -5.0 -200 625 5.0 1.5 12 -55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C MPS3906 1 2 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 2 BASE 1 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = -1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = -10 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Collector Cutoff Current (VCE = -30 Vdc, VEB(off) = -3.0 Vdc) Base Cutoff Current (VCE = -30 Vdc, VEB(off) = -3.0 Vdc) 1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBL -40 -40 -5.0 -- -- -- -- -- -50 -50 Vdc Vdc Vdc nAdc nAdc (c) Semiconductor Components Industries, LLC, 2001 1 March, 2001 - Rev. 2 Publication Order Number: MPS3906/D MPS3906 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) hFE 60 80 100 60 30 VCE(sat) -- -- VBE(sat) -0.65 -- -0.85 -0.95 -0.25 -0.4 Vdc -- -- 300 -- -- Vdc -- DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -20 V, f = 100 MHz) Output Capacitance (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Small-Signal Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Output Admittance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Noise Figure (IC = -100 mAdc, VCE = -5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 250 -- -- 2.0 1.0 100 3.0 -- -- 4.5 10 12 10 400 60 4.0 MHz pF pF k X 10-4 -- mmhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = -3.0 Vdc, VBE(off) = +0.5 Vdc, 3.0 IC = -10 mAdc, IB1 = 1.0 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc, IB1 = IB2 = -1.0 mAdc) 1 0 Ad ) td tr ts tf -- -- -- -- 35 50 600 90 ns ns ns ns 1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%. http://onsemi.com 2 MPS3906 TYPICAL NOISE CHARACTERISTICS (VCE = -5.0 Vdc, TA = 25C) 10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 A 30 A 100 A 1.0 mA 300 A BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 300 A 100 A 30 A 10 A 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k IC = 1.0 mA BANDWIDTH = 1.0 Hz RS 3.0 2.0 Figure 1. Noise Voltage Figure 2. Noise Current NOISE FIGURE CONTOURS 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1.0 k (VCE = -5.0 Vdc, TA = 25C) RS , SOURCE RESISTANCE (OHMS) BANDWIDTH = 1.0 Hz 1.0 M 500 k BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1.0 k Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz RS , SOURCE RESISTANCE (OHMS) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 0.5 dB 10 Hz to 15.7 kHz Noise Figure is Defined as: NF + 20 log10 en2 ) 4KTRS ) In 2RS2 1 2 4KTRS 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (A) en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) Figure 5. Wideband http://onsemi.com 3 MPS3906 TYPICAL STATIC CHARACTERISTICS 400 TJ = 125C 25C h FE, DC CURRENT GAIN 200 -55C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 Figure 6. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) IC = 1.0 mA 10 mA 50 mA TA = 25C IC, COLLECTOR CURRENT (mA) 100 TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0% 300 A 60 40 20 0 IB = 400 A 350 A 250 A 200 A 150 A 100 A 50 A 100 mA 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 7. Collector Saturation Region Figure 8. Collector Characteristics 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.1 TJ = 25C V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 1.6 *APPLIES for IC/IB hFE/2 0.8 0 0.8 25C to 125C 1.6 2.4 0.1 qVB for VBE 0.2 -55C to 25C 50 100 *qVC for VCE(sat) 25C to 125C -55C to 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V VCE(sat) @ IC/IB = 10 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 9. "On" Voltages Figure 10. Temperature Coefficients http://onsemi.com 4 MPS3906 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 100 70 50 30 20 10 7.0 5.0 1.0 td @ VBE(off) = 0.5 V tr 1000 700 500 300 200 t, TIME (ns) 100 70 50 30 20 50 70 100 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 ts VCC = 3.0 V IC/IB = 10 TJ = 25C VCC = -3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C t, TIME (ns) tf 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 11. Turn-On Time BANDWIDTH PRODUCT (MHz) Figure 12. Turn-Off Time 500 TJ = 25C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF) 10 7.0 5.0 Cib TJ = 25C 3.0 2.0 Cob f T, CURRENT-GAIN 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current-Gain -- Bandwidth Product Figure 14. Capacitance 20 hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 MPS3906 hfe 200 @ IC = -1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = -10 Vdc f = 1.0 kHz TA = 25C 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 VCE = 10 Vdc f = 1.0 kHz TA = 25C MPS3906 hfe 200 @ IC = 1.0 mA 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 Figure 15. Input Impedance Figure 16. Output Admittance http://onsemi.com 5 MPS3906 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 P(pk) t1 t2 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZqJA(t) = r(t) w RqJA TJ(pk) - TA = P(pk) ZqJA(t) r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.01 0.01 0.02 Figure 17. Thermal Response 400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 TC = 25C TA = 25C TJ = 150C dc 1.0 ms 100 s dc 10 s 1.0 s The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 18. Active-Region Safe Operating Area 104 IC, COLLECTOR CURRENT (nA) 103 102 101 100 10-1 10-2 -40 VCC = 30 V ICEO DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 17 by the steady state value RJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. ICBO AND ICEX @ VBE(off) = 3.0 V -20 0 +20 +40 +60 +80 +100 +120 +140 +160 For more information, see AN-569. TJ, JUNCTION TEMPERATURE (C) Figure 19. Typical Collector Leakage Current http://onsemi.com 6 MPS3906 PACKAGE DIMENSIONS CASE 029-04 (TO-226AA) ISSUE AD A R P SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 7 MPS3906 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MPS3906/D |
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