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| Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION With TO-220F package High voltage ,high speed Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION MJF18006 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1000 450 9 6 15 4 8 40 150 -65~150 ae ae UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance junction to case Thermal resistance junction to ambient MAX 3.125 62.5 ae UNIT ae /W /W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage CONDITIONS IC=0.1A; L=25mH IC=1.3A ;IB=0.13A TC=125ae IC=3A ;IB=0.6A TC=125ae IC=1.3A; IB=0.13A IC=3A; IB=0.6A VCES=RatedVCES; VEB=0 TC=125ae VCES=800V ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency Collector outoput capacitance VCE=RatedVCEO; IB=0 VEB=9V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=1V IC=1.3A ; VCE=1V IC=10mA ; VCE=5V IC=0.5A ; VCE=10V;f=1.0MHz f=1MHz ; VCB=10V;f=1.0MHz 10%,Pulse Width=20|I s VCC=300V ,IC=3A IB1=0.6A; IB2=1.5A 90 1.7 0.2 1.2 14 6 11 10 14 75 MIN 450 SYMBOL VCEO(SUS) VCEsat-1 MJF18006 TYP. MAX UNIT V 0.6 0.65 0.7 0.8 1.2 1.3 0.1 0.5 0.1 0.1 0.1 34 V VCEsat-2 VBEsat-1 VBEsat-2 Collector-emitter saturation voltage Emitter-base saturation voltage Emitter-base saturation voltage V V V ICES Collector cut-off current mA mA mA MHz pF Switching times resistive load,Duty CycleU ton toff ton toff Turn-on time Turn-off time Turn-on time Turn-off time ns 2.5 0.3 2.5 |I |I |I s s s VCC=300V ,IC=1.3A IB1=0.13A; IB2=0.65A JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE MJF18006 Fig.2 Outline dimensions JMnic |
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