vishay siliconix si1967dh document number: 68784 s-81726-rev. a, 04-aug-08 www.vishay.com 1 new product dual p-channel 20-v (d-s) mosfet features ? trenchfet ? power mosfet ? pwm optimized applications ? load switch for portable devices product summary v ds (v) r ds(on) ( ) i d (a) q g (typ.) - 20 0.490 at v gs = - 4.5 v - 1.3 a 1.6 nc 0.640 at v gs = - 2.5 v - 1.2 0.790 at v gs = - 1.8 v - 1.0 marking code df xx lot traceability and date code part # code yy sot-363 sc-70 (6-leads) 6 4 1 2 3 5 top view s 1 g 1 d 2 d 1 g 2 s 2 d 2 s 2 g 2 d 1 s 1 g 1 ordering information: SI1967DH-T1-E3 (lead (pb)-free) notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 220 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d - 1.3 a a t c = 70 c - 1.1 t a = 25 c - 1.0 b, c t a = 70 c - 0.83 b, c pulsed drain current i dm - 3 continuous source-drain diode current t c = 25 c i s - 1 t a = 25 c - 0.6 b, c maximum power dissipation t c = 25 c p d 1.25 w t c = 70 c 0.8 t a = 25 c 0.74 b, c t a = 70 c 0.47 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 5 s r thja 130 170 c/w maximum junction-to-foot (drain) steady state r thjf 80 100 rohs compliant
www.vishay.com 2 document number: 68784 s-81726-rev. a, 04-aug-08 vishay siliconix si1967dh new product notes: a. pulse test; pulse width 300 s, duty cycle 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient v ds /t j i d = - 250 a - 20 mv/c v gs(th) temperature coefficient v gs(th) /t j 2 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.4 - 1.0 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 85 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 3 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 0.91 a 0.390 0.490 v gs = - 2.5 v, i d = - 0.8 a 0.500 0.640 v gs = - 1.8 v, i d = - 0.25 a 0.640 0.790 forward transconductance a g fs v ds = - 10 v, i d = - 0.91 a 2s dynamic b input capacitance c iss v ds = - 10 v, v gs = 0 v, f = 1 mhz 110 pf output capacitance c oss 26 reverse transfer capacitance c rss 16 total gate charge q g v ds = - 10 v, v gs = - 8 v, i d = - 1.1 a 2.6 4.0 nc v ds = - 10 v, v gs = - 4.5 v, i d = - 1.1 a 1.6 2.4 gate-source charge q gs 0.36 gate-drain charge q gd 0.33 gate resistance r g f = 1 mhz 7.5 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 12 i d ? - 0.83 a, v gen = - 4.5 v, r g = 1 12 20 ns rise time t r 27 40 turn-off delay time t d(off) 15 25 fall time t f 10 15 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 12 i d ? - 0.83 a, v gen = - 8 v, r g = 1 25 rise time t r 12 20 turn-off delay time t d(off) 12 20 fall time t f 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 1.0 a pulse diode forward current a i sm - 3.0 body diode voltage v sd i s = - 0.9 a - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 0.83 a, di/dt = 100 a/s, t j = 25 c 25 50 ns body diode reverse recovery charge q rr 15 30 nc reverse recovery fall time t a 12 ns reverse recovery rise time t b 13
document number: 68784 s-81726-rev. a, 04-aug-08 www.vishay.com 3 vishay siliconix si1967dh new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =5thr u 2.5 v v gs =2 v v gs =1 v v gs =1.5 v 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =4.5 v v gs =1. 8v v gs =2.5 v 0 2 4 6 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds =16 v v ds =10 v i d =1a transfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.2 0.4 0.6 0. 8 1.0 0.0 0.4 0. 8 1.2 1.6 2.0 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = 125 c t c = - 55 c 0 40 8 0 120 160 200 036912 c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c oss c rss 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) v gs =4.5 v ,2.5 v ;i d =0.91a v gs =1. 8v ;i d =0.12a
www.vishay.com 4 document number: 68784 s-81726-rev. a, 04-aug-08 vishay siliconix si1967dh new product typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1 v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.1 10 t j = 150 c t j = 25 c 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0. 8 0 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power 0.0 0.4 0. 8 1.2 1.6 2.0 012345 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t j =25 c t j = 125 c i d = - 0.91 a 0 1 5 ) w ( r e w o p time (s) 3 4 1 600 10 0.1 0.01 2 100 safe operating area, junction-to-ambient v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d 10 0.1 0.1 1 10 1 t a = 25 c single p u lse 1ms 10 ms 100 ms 0.01 1s,10s dc b v dss limited 100 limited b yr ds(on) *
document number: 68784 s-81726-rev. a, 04-aug-08 www.vishay.com 5 vishay siliconix si1967dh new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0.0 0.4 0. 8 1.2 1.6 0 255075100125150 t c - case temperat u re (c) i d - drain c u rrent (a) package limited power, junction-to-foot 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 25 50 75 100 125 150 t c - case temperat u re (c) w er dissipation ( w ) o p
www.vishay.com 6 document number: 68784 s-81726-rev. a, 04-aug-08 vishay siliconix si1967dh new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68784 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1. d u ty cycle, d = 2. per unit base = r thja = 220 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm 0.02 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 0.02
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