? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gsm transient 40 v v gsm continuous 30 v i d25 t c = 25 c80a i l lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 200 a i ar t c = 25 c80a e ar t c = 25 c80mj e as t c = 25 c 3.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 1040 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c f c mounting force (plus247) 20..120/4.5..25 n/lb m d mounting torque (to-264) 1.13/10 nm/lb.in. weight to-264 10 g ds99437e(03/06) symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 500 a 500 v v gs(th) v ds = v gs , i d = 8 ma 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 i d25 65 m ? polarhv tm hiperfet power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode features l international standard package l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density ixfk 80n50p ixfx 80n50p v dss = 500 v i d25 = 80 a r ds(on) 65 m ? ? ? ? ? t rr 200 ns to-264 (ixfk) s g d d (tab) plus247 (ixfx) d (tab) d g = gate s = source d = drain tab = collector s plus247 6 g
ixys reserves the right to change limits, test conditions, and dimensions. ixfk 80n50p ixfx 80n50p symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , note 1 45 70 s c iss 12.7 nf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1280 pf c rss 120 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 27 ns t d(off) r g = 1 ? (external) 70 ns t f 16 ns q g(on) 197 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 70 nc q gd 64 nc r thjc 0.12 cw r thcs 0.15 c/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 80 a i sm repetitive 200 a v sd i f = i s , v gs = 0 v, 1.5 v t rr i f = 25 a, -di/dt = 100 a/ s 200 ns q rm v r = 100 v, v gs = 0 v 0.6 c i rm 6a notes: 1. pulse test, t 300 s, duty cycle d 2 % ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 to-264 (ixfk) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm (ixfx) outline
? 2006 ixys all rights reserved ixfk 80n50p ixfx 80n50p fig. 2. extended output characteristics @ 25 c 0 20 40 60 80 100 120 140 160 180 0 3 6 9 12 15 18 2 1 2 4 2 7 v d s - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 3. output characteristics @ 125 c 0 10 20 30 40 50 60 70 80 0 2 4 6 8 101214 v d s - volts i d - amperes v gs = 10v 7v 6v 5v fig. 1. output characteristics @ 25 c 0 10 20 30 40 50 60 70 80 012 3456 v d s - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 80a i d = 40a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) no r m aliz e d t o 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 0 20 40 60 80 100 120 140 160 180 i d - amperes r d s ( o n ) - normalize d t j = 125 c t j = 25 c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixfk 80n50p ixfx 80n50p fig. 11. capacitance 10 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarad s c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v g s - volts v ds = 250v i d = 40a i g = 10ma fig. 7. input admittance 0 20 40 60 80 100 120 140 44.5 55.5 66.5 77.5 v g s - volts i d - amperes t j = 125 c 25 c -40 c fig. 8. transconductance 0 20 40 60 80 100 120 140 0 20406080100120140 i d - amperes g f s - siemens t j = -40 c 25 c 125 c fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 125 c t j = 25 c fig. 12. for w ar d-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150 c t c = 25 c r ds(on) limit 10ms 25s
? 2006 ixys all rights reserved ixfk 80n50p ixfx 80n50p fig. 13. maxim um transient therm al resistance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - o c / w
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