tm october 2008 fdc5661n_f085 n-channel logic level powertrench ? mosfet ? 2008 fairchild semiconductor corporation fdc5661n_f085 rev. a www.fairchildsemi.com 1 fdc5661n_f085 n-channel logic level powertrench ? mosfet 60v, 4a, 60 m features ? r ds(on) = 47m at v gs = 10v, i d = 4.3a ? r ds(on) = 60m at v gs = 4.5v, i d = 4a ? typ q g(tot) = 14.5nc at v gs = 10v ? low miller charge ? qualified to aec q101 ? dc/dc converter ? motor drives ? rohs compliant applications
fdc5661n_f085 n-channel logic level powertrench ? mosfet fdc5661n_f085 rev. a www.fairchildsemi.com 2 mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 60 v v gs gate to source voltage 20 v i d drain current continuous (v gs = 10v) 4.3 a pulsed 20 p d power dissipation 1.6 w t j , t stg operating and storage temperature -55 to +150 o c r jc thermal resistance junction to case 30 o c/w r ja thermal resistance junction to ambient to-263, 1in 2 copper pad area 78 o c/w package marking and ordering information device marking device package reel size tape width quantity .661n fdc5661n_f085 ssot -6 7? 8mm 3000 units electrical characteristics t a = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 60 - - v i dss zero gate voltage drain current v ds = 48v, - - 1 a v gs = 0v t a = 150 o c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a12 . 03v r ds(on) drain to source on resistance i d = 4.3a, v gs = 10v - 38 47 m i d = 4a, v gs = 4.5v - 46 60 i d = 4.3a, v gs = 10v t j = 150 o c -6986 c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 763 - pf c oss output capacitance - 68 - pf c rss reverse transfer capacitance - 36 - pf r g gate resistance f = 1mhz - 2.6 - q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 30v i d = 4.3a - 14.5 19 nc q gs gate to source gate charge -2.4-nc q gd gate to drain ?miller? charge - 2.9 - nc
fdc5661n_f085 n-channel logic level powertrench ? mosfet fdc5661n_f085 rev. a www.fairchildsemi.com 3 electrical characteristics t a = 25 o c unless otherwise noted switching characteristics drain-source diode characteristics notes: 1: symbol parameter test conditions min typ max units t on turn-on time v dd = 30v, i d = 4.3a v gs = 10v, r gs = 6 - - 17.6 ns t d(on) turn-on delay time - 7.2 - ns t r rise time - 1.6 - ns t d(off) turn-off delay time - 19.3 - ns t f fall time - 3.1 - ns t off turn-off time - - 36 ns v sd source to drain diode voltage i sd = 4.3a - 0.8 1.25 v i sd = 2.1a - 0.8 1.0 t rr reverse recovery time i sd = 4.3a, di sd /dt = 100a/ s - 18.4 24 ns q rr reverse recovery charge - 10.0 13 nc this product has been designed to meet the extreme test conditi ons and environment demanded by the automotive industry. for a copy of the requirements, see aec q101 at: http://www.aecouncil.com/ all fairchild semiconduc tor products are manufactured, assembled and t ested under iso9000 and qs9000 quality systems certification.
fdc5661n_f085 n-channel logic level powertrench ? mosfet fdc5661n_f085 rev. a www.fairchildsemi.com 4 typical characteristics figure 1. normalized power dissipation vs ambient temperature 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t a , ambient temperature( o c) figure 2. maximum continuous drain current vs ambient temperature 25 50 75 100 125 150 0 1 2 3 4 5 r ja = 78 o c/w v gs = 4.5v v gs = 10v i d , drain current (a) t a , ambient temperature( o c) figure 3. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 r ja = 78 o c/w single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z ja t , rectangular pulse duration ( s ) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 r ja = 78 o c/w v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) t c = 25 o c i = i 2 5 150 - t c 125 for temperatures above 25 o c derate peak current as follows:
fdc5661n_f085 n-channel logic level powertrench ? mosfet fdc5661n_f085 rev. a www.fairchildsemi.com 5 figure 5. 0.01 0.1 1 10 100 300 0.01 0.1 1 10 100 1s 100ms 10us 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t a = 25 o c dc forward bias safe operating area figure 6. 012345 0 4 8 12 16 20 t j = -55 o c t j = 25 o c t j = 150 o c pulse duration = 80 s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 7. 01234 0 4 8 12 16 20 v gs = 4v v gs = 10v v gs = 6v v gs = 3.5v v gs = 4.5v v gs = 5v v gs = 3v pulse duration = 80 s duty cycle = 0.5% max i d , drain current (a) v ds , drain to source voltage (v) saturation characteristics figure 8. 24681 0 30 60 90 120 i d = 4.3a pulse duration = 80 s duty cycle = 0.5% max r ds(on) , drain to source on-resistance ( m ) v gs , gate to source voltage ( v ) t j = 25 o c t j = 150 o c drain to source on-res i stance variation vs gate to source voltage figure 9. -80 -40 0 40 80 120 160 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 pulse duration = 80 s duty cycle = 0.5% max i d = 4.3a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) normalized drain to source on resistance vs junction temperature figure 10. -80 -40 0 40 80 120 160 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v gs = v ds i d = 250 a normalized gate threshold voltage t j , junction temperature( o c) normalized gate threshold voltage vs junction temperature typical characteristics
fdc5661n_f085 n-channel logic level powertrench ? mosfet fdc5661n_f085 rev. a www.fairchildsemi.com 6 figure 11. -80 -40 0 40 80 120 160 0.90 0.95 1.00 1.05 1.10 1.15 i d = 250 a normalized drain to source breakdown voltage t j , junction temperature ( o c ) normalized drain to source breakdown voltage vs junction temperature figure 12. capacitance vs drain to source vol tage 0.1 1 10 50 10 100 1000 2000 f = 1mhz v gs = 0v c rss c oss c iss v ds , drain to source voltage ( v ) capacitance (pf) figure 13. 0 3 6 9 12 15 0 2 4 6 8 10 i d = 4.3a v dd = 40v v dd = 20v v dd = 30v q g , gate charge(nc) v gs , gate to source voltage(v) gate charge vs gate to source voltage figure 14. typical characteristics
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