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  bf 770a 1 oct-26-1999 npn silicon rf transistor  for if amplifiers in tv-sat tuners and for vcr modulators 1 2 3 vps05161 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package bf 770a lss 1 = b 2 = e 3 = c sot-23 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 12 v collector-emitter voltage v ces 20 collector-base voltage v cbo 20 emitter-base voltage v ebo 2 collector current i c 50 ma base current i b 6 total power dissipation , t s  63 c f) p tot 300 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t stg -65 ... 150 thermal resistance  290 k/w junction - soldering point r thjs 1 t s is measured on the collector lead at the soldering point to the pcb
bf 770a 2 oct-26-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values max. min. typ. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo - - v 12 - - 100 i ces a collector-emitter cutoff current v ce = 20 v, v be = 0 collector-base cutoff current v cb = 10 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 2 v, i c = 0 a 10 - - i ebo h fe 50 100 dc current gain i c = 30 ma, v ce = 8 v 200 -
bf 770a 3 oct-26-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 30 ma, v ce = 8 v, f = 500 mhz f t 4.5 6 - ghz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 0.58 0.9 pf collector-emitter capacitance v ce = 10 v, f = 1 mhz c ce - 0.23 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 1.7 - noise figure i c = 5 ma, v ce = 8 v, z s = z sopt , f = 900 mhz f = 1.8 ghz f - - 2 3.3 - - db power gain, maximum available 1) i c = 30 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 900 mhz f = 1.8 ghz g ma - - 13.5 8.5 - - transducer gain i c = 30 ma, v ce = 8 v, z s = z l = 50  , f = 900 mhz f = 1.8 ghz | s 21e | 2 - - 12 6.5 - - 1 g ma = | s 21 / s 12 | (k-(k 2 -1) 1/2 )


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