FW344 no.7616-1/6 features ? low on-resistance. ? ultrahigh-speed switching. ? composite type with an n-channel mosfet and a p- channel mosfet driving from a 4v supply voltage contained in a single package. ? high-density mounting. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit n-channel p-channel drain-to-source voltage v dss 30 --30 v gate-to-source voltage v gss 20 20 v drain current (dc) i d 3.5 --4 a drain current (pw 10s) i d duty cycle 1% 4 --4.5 a drain current (pw 100ms) i d duty cycle 1% 6 --6.5 a drain current (pw 10 m s) i dp duty cycle 1% 14 --16 a allowable power dissipation p d mounted on a ceramic board (2000mm 2 5 0.8mm)1unit 1.4 w total dissipation p t mounted on a ceramic board (2000mm 2 5 0.8mm) 1.7 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v marking : w344 continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7616 FW344 package dimensions unit : mm 2129 [FW344] 71003 ts im ta-100756 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. n-channel and p-channel silicon mosfets motor driver applications 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : sop8 14 5 8 4.4 0.3 6.0 0.2 5.0 0.595 1.27 1.5 0.1 1.8max 0.43
FW344 no.7616-2/6 continued from preceding page. ratings parameter symbol conditions min typ max unit forward transfer admittance ? yfs ? v ds =10v, i d =3.5a 3.0 5.3 s r ds (on)1 i d =3.5a, v gs =10v 64 84 m w static drain-to-source on-state resistance r ds (on)2 i d =1.8a, v gs =4v 105 150 m w input capacitance ciss v ds =10v, f=1mhz 180 pf output capacitance coss v ds =10v, f=1mhz 42 pf reverse transfer capacitance crss v ds =10v, f=1mhz 25 pf turn-on delay time t d (on) see specified test circuit. 7 ns rise time t r see specified test circuit. 15 ns turn-off delay time t d (off) see specified test circuit. 19 ns fall time t f see specified test circuit. 5 ns total gate charge qg v ds =10v, v gs =10v, i d =3.5a 5.0 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =3.5a 0.9 nc gate-to-drain miller charge qgd v ds =10v, v gs =10v, i d =3.5a 0.6 nc diode forward voltage v sd i s =3.5a, v gs =0 0.88 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0 --1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.3 v forward transfer admittance ? yfs ? v ds =--10v, i d =--4a 3.5 5 s r ds (on)1 i d =--4a, v gs =--10v 58 78 m w static drain-to-source on-state resistance r ds (on)2 i d =--2a, v gs =--4v 105 147 m w input capacitance ciss v ds =--10v, f=1mhz 510 pf output capacitance coss v ds =--10v, f=1mhz 115 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 78 pf turn-on delay time t d (on) see specified test circuit. 11 ns rise time t r see specified test circuit. 55 ns turn-off delay time t d (off) see specified test circuit. 35 ns fall time t f see specified test circuit. 40 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--4a 11 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--4a 2.4 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--10v, i d =--4a 1.7 nc diode forward voltage v sd i s =--4a, v gs =0 --0.9 --1.5 v electrical connection switching time test circuit [n-channel] [p-channel] pw=10 m s d.c. 1% p. g 50 w g s d i d =3.5a r l =4.3 w v dd =15v v out FW344 v in 10v 0v v in pw=10 m s d.c. 1% p. g 50 w g s d i d = --4a r l =3.75 w v dd = --15v v out FW344 v in 0v --10v v in 8765 1234 (top view) 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1
FW344 no.7616-3/6 gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a drain current, i d -- a forward transfer admittance, ? y fs ? -- s static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v forward current, i f -- a ambient temperature, ta -- c 1.0 7 5 3 2 7 5 3 2 100 10 0.01 2 7 5 3 2 7 5 3 2 7 5 3 1.0 0.1 10 10 2 100 7 5 3 1000 7 5 3 2 50 100 150 200 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 --60 --40 --20 0 20 40 60 80 100 120 160 140 2345678910 r ds (on) -- v gs it06459 0 50 100 150 300 250 200 1 2 3 4 7 6 5 0 0 0.4 0.8 0.9 1.0 0.2 0.6 0.3 0.7 0.1 0.5 i d -- v ds v gs =3v 4v 10v it06457 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i d -- v gs v ds =10v 25 c --25 c ta=75 c it06458 r ds (on) -- ta it06460 0 ta=25 c 3.5a i d =1.8a 5v 6v i d =3.5a, v gs =10v i d =1.8a, v gs =4v [nch] [nch] [nch] [nch] [nch] [nch] [nch] [nch] sw time -- i d t d (on) t d (off) t r t f it06463 ciss, coss, crss -- v ds it06461 0.01 0.1 23 57 23 57 23 57 1.0 10 0.1 23 57 1.0 23 57 10 0.1 2 7 5 3 2 7 5 3 1.0 10 ? y fs ? -- i d v ds =10v ta= --25 c it06462 0.2 0.4 0.3 0.6 0.5 0.8 1.0 0.7 0.9 1.2 1.1 i f -- v sd v gs =0 --25 c 25 c ta=75 c 0 5 10 15 20 25 30 f=1mhz ciss coss crss it06464 v dd =15v v gs =10v 75 c 25 c 8v
FW344 no.7616-4/6 total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v ambient temperature, ta -- c drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v forward current, i f -- a it06472 --0.001 2 --0.01 --0.1 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 --1.0 --10 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 0.1 2 7 5 3 2 7 5 3 1.0 10 50 100 150 200 0 --60 --40 --20 0 20 40 60 80 100 120 160 140 0 --4 --8 --12 --16 --2 --6 --10 --14 50 100 150 200 250 300 0 -- 1 -- 2 -- 3 -- 4 -- 5 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --0.1 --0.3 --0.5 --0.7 --0.9 v gs -- qg it06465 0 2 4 6 8 10 1 3 5 7 9 0123456 r ds (on) -- ta r ds (on) -- v gs it06469 it06470 i d -- v gs --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 0 i d -- v ds it06467 it06468 [pch] [pch] [nch] [pch] [pch] v ds = --10v --25 c ta= 75 c v gs = --2.5v --10.0v -- 4.0v -- 3.5v -- 3.0v --8.0v i d = --2a --4a ta=25 c it06471 ? y fs ? -- i d i f -- v sd v gs =0 [pch] [pch] v ds = --10v 75 c 25 c ta= --25 c --25 c 25 c ta=75 c v ds =10v i d =3.5a --4.5v -- 6.0v 25 c i d = --2a, v gs = --4v i d = --4a, v gs = --10v --0.01 --0.1 23 57 23 57 23 57 --1.0 --10 0.1 1.0 23 57 23 23 57 10 5 0.01 0.1 1.0 10 7 5 3 2 7 5 3 2 7 5 3 2 3 2 a s o it06466 i dp =14a i d =3.5a dc operation 1ms 10ms 10s <10 m s 100 m s [nch] operation in this area is limited by r ds (on). 100ms ta=25 c single pulse mounted on a ceramic board(2000mm 2 5 0.8mm) 1unit
FW344 no.7616-5/6 drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c allowable power dissipation, p d -- w 024681012 0 -- 2 -- 4 -- 6 -- 8 --10 3 100 7 5 3 2 7 5 1000 10 100 7 5 3 2 3 2 5 --0.1 23 57 --1.0 23 57 --10 0 --5 --10 --15 --20 --25 --30 ciss, coss, crss -- v ds sw time -- i d it06473 it06474 [pch] [pch] ciss coss crss f=1mhz t d (on) t d (off) t r t f v gs -- qg v ds = --10v i d = --4a it06475 [pch] [nch, pch] 0 20 40 60 80 100 120 140 160 0 0.5 1.0 1.5 1.4 1.7 2.0 p d -- ta it06477 1unit v dd = --15v v gs = --10v --0.01 --0.1 --1.0 --10 5 23 23 57 23 57 23 57 --0.01 --0.1 --1.0 --10 7 5 3 2 7 5 3 2 7 5 3 2 3 2 a s o it06476 [pch] 100ms dc operation 100 m s 1ms 10ms 10s i dp = --16a <10 m s i d = --4a operation in this area is limited by r ds (on). ta=25 c single pulse mounted on a ceramic board(2000mm 2 5 0.8mm) 1unit total dissipation mounted on a ceramic board(2000mm 2 5 0.8mm)
FW344 no.7616-6/6 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of july, 2003. specifications and information herein are subject to change without notice. ps
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