specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www. triquint.com january 2009 HMJ5 high dynamic range fet mixer product features ? +35 dbm iip3 ? no external matching element required ? rf 40 - 1000 mhz ? lo 30 - 900 mhz ? if 5 - 250 mhz ? +17 dbm lo drive level ? +3v at 35ma dc power supply ? low cost surface mount j-lead package product description the HMJ5 is a high dynamic range gaas fet mixer. this active fet mixer realizes a typical third order intercept point of +35 dbm at an lo drive level of +17 dbm. the HMJ5 comes in a low cost, j-lead package. typical applications include frequency up/down conversion, modulation and demodulation for receivers and transmitters used in communications systems. functional diagram function pin no. if 2 lo 13 rf 21 +3v 10 ground all other pins specifications (1) parameter units min typ max condition rf frequency range mhz 40 ? 1000 lo frequency range mhz 30 ? 900 if frequency range mhz 5 ? 250 ssb conversion loss db 7.5 9.0 noise figure db 9.5 lo-rf isolation db 20 28 lo-if isolation db 24 30 input ip3 dbm 31 35 rf = 900 mhz @ 0 dbm rf return loss db 11.7 lo return loss db 6.0 if return loss db 10.9 input p1db dbm +23 lo drive level dbm +17 dc current at +3v bias ma 35 60 notes: 1. test conditions unless otherwise noted: 25 oc, rf = 905 mhz @ -10 dbm, lo = 900mhz @ +17 dbm, if = 5 mhz. 2. measured in a 50-ohm system with nominal lo dri ve in a downconverter application only, unless othe rwise specified. 3. lo frequency must be separated from if frequenc y by a minimum of 2 mhz (i.e., | f lo ? f if | 2 mhz). absolute maximum rating ordering information parameters rating part no. description operating case temperature -40 to +85 c HMJ5 high dynamic range fet mixer storage temperature -65 to +100 c device voltage +7 v device current 69 ma maximum input power +25 dbm operation of this device above any of these paramet ers may cause permanent damage. total sum of lo port and rf port power should not e xceed 25 dbm. if rf lo +3vdc
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www. triquint.com january 2009 HMJ5 high dynamic range fet mixer typical performance data
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www. triquint.com january 2009 HMJ5 high dynamic range fet mixer outline drawing dimensions are expressed in inches. tolerance .xxx [ .015 .xx [ .02 drawing is illustrated at max dimensions. land pattern / mounting configuration product marking the component will be marked with an ?hmj7? designator with a four-digit alphanumeric lot number xxxx. tape and reel specifications for this part are located on the website in the ?application notes? section. esd information esd rating: class 2 value: passes at 2000 v test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes at 2000 v test: charged device model (cdm) standard: jedec standard jesd22-c101 mounting config. notes 1. ground vias are critical for thermal and rf groundi ng considerations. 2. a minimum of 36 ground vias are required for 14 mil fr4 boards. 3. if your pcb design rules allow, ground vias should be placed under the land pattern for better rf and the rmal performance. otherwise ground vias should be place d as close to the land pattern as possible. 4. trace width depends on the pcb material.
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