? semiconductor components industries, llc, 2009 november, 2009 ? rev. 2 1 publication order number: ntk3142p/d ntk3142p small signal mosfet ? 20 v, ? 280 ma, p ? channel with esd protection, sot ? 723 features ? enables high density pcb manufacturing ? 44% smaller footprint than sc ? 89 and 38% thinner than sc ? 89 ? low voltage drive makes this device ideal for portable equipment ? low threshold levels, 1.8 v r ds(on) rating ? low profile (< 0.5 mm) allows it to fit easily into extremely thin environments such as portable electronics ? operated at standard logic level gate drive, facilitating future migration to lower levels using the same basic topology. ? this is a pb ? free device applications ? interfacing, switching ? high speed switching ? cellular phones, pda?s maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss ? 20 v gate ? to ? source voltage v gs 8.0 v continuous drain current (note 1) steady state t a = 25 c i d ? 260 ma t a = 85 c ? 185 t 5 s t a = 25 c ? 280 power dissipation (note 1) steady state t a = 25 c p d 400 mw t 5 s 500 continuous drain current (note 2) steady state t a = 25 c i d ? 215 ma t a = 85 c ? 155 power dissipation (note 2) t a = 25 c p d 280 mw pulsed drain current t p = 10 s i dm ? 310 ma operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) (note 2) i s ? 240 ma lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface ? mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces) 2. surface ? mounted on fr4 board using the minimum recommended pad size. http://onsemi.com v (br)dss r ds(on) typ i d max ? 20 v 2.7 @ ? 4.5 v 4.1 @ ? 2.5 v ? 280 ma device package shipping ? ordering information ntk3142pt1g sot ? 723 (pb ? free) 4000/tape & reel 4 mm pitch case 631aa sot ? 723 marking diagram top view sot ? 723 (3 ? lead) 3 12 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 6.1 @ ? 1.8 v kb m 1 kb = specific device code m = date code 1 ? gate 2 ? source 3 ? drain NTK3142PT5G sot ? 723 (pb ? free) 8000/tape & reel 2 mm pitch
ntk3142p http://onsemi.com 2 thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state (note 3) r ja 315 c/w junction ? to ? ambient ? t = 5 s (note 3) r ja 250 junction ? to ? ambient ? steady state minimum pad (note 4) r ja 440 3. surface ? mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces) 4. surface ? mounted on fr4 board using the minimum recommended pad size. mosfet electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = ? 100 a ? 20 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j i d = ? 100 a, reference to 25 c 14 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ? 16 v t j = 25 c ? 1.0 a t j = 125 c ? 2.0 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 5 v 1 a on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = ? 250 a ? 0.4 ? 1.3 v gate threshold temperature coefficient v gs(th) /t j ? 2.0 mv/ c drain ? to ? source on resistance r ds(on) v gs = ? 4.5v, i d = ? 260 ma 2.9 4.0 drain ? to ? source on resistance r ds(on) v gs = ? 4.5v, i d = ? 10 ma 2.7 3.4 v gs = ? 2.5 v, i d = ? 1 ma 4.1 5.3 v gs = ? 1.8 v, i d = ? 1 ma 6.1 10 forward transconductance g fs v ds = ? 5 v, i d = ? 10 ma 73 ms capacitances input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = ? 10 v 15.3 pf output capacitance c oss 4.3 reverse transfer capacitance c rss 2.3 switching characteristics, v gs = 4.5 v (note 6) turn ? on delay time t d(on) v gs = ? 4.5 v, v dd = ? 5 v, i d = ? 100 ma, r g = 6 8.4 16 ns rise time t r 15.3 28 turn ? off delay time t d(off) 37.5 80 fall time t f 22.7 43 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ? 10 ma t j = 25 c 0.69 ? 1.2 v t j = 125 c 0.56 reverse recovery time t rr v gs = 0 v, v dd = ? 20 v, di sd /dt = 100 a/ s, i s = ? 1.0 a 37 80 ns charge time t a 15.9 30 discharge time t b 21.1 50 reverse recovery charge q rr 20 70 nc 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures.
ntk3142p http://onsemi.com 3 typical performance curves t j = 150 c 0 0.1 1 ? v ds , drain ? to ? source voltage (volts) ? i d, drain current (amps) 0 figure 1. on ? region characteristics 1.5 0.1 0 figure 2. transfer characteristics ? v gs , gate ? to ? source voltage (volts) figure 3. on ? resistance vs. gate ? to ? source voltage r ds(on), drain ? to ? source resistance ( ) ? i d, drain current (amps) figure 4. on ? resistance vs. drain current and gate voltage ? i d, drain current (amps) ? 50 0 ? 25 25 4.0 9.0 2.0 1.0 50 150 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c t j = ? 40 c 75 t j = 25 c r ds(on), drain ? to ? source resistance t j = 25 c r ds(on), drain ? to ? source resistance ( ) v gs = ? 2.5 v 1 figure 6. drain ? to ? source leakage current vs. voltage ? v ds , drain ? to ? source voltage (volts) 15 v gs = 0 v ? i dss , leakage (na) t j = 150 c t j = 125 c ? 2.0 v ? 2.2 v v gs = ? 4.5 v v ds ? 5 v 10 ? 1.4 v 20 v gs = ? 4 v to ? 10 v 0.2 0.4 125 100 2.5 10 ? v gs , gate ? to ? source voltage (volts) 4 6 8 16 2 4 6 2 4 3 5 100 5 3 0.5 12 0 0.3 0.1 3.0 0.2 2 1000 ? 1.6 v ? 2.5 v 10 8 0.2 0.4 i d = ? 0.26 a t j = 25 c 01 10 1.5 ? 1.8 v 27 59 3 5.0 v gs = ? 2.5 v v gs = ? 4.5 v v gs = ? 0.01 v 6.0 7.0 8.0 v gs = ? 1.8 v 3 5 7 1 9 10 8 7 9 0.3 2.5 ? 3.0 v 0.3 3
ntk3142p http://onsemi.com 4 typical performance curves figure 7. capacitance variation 0.1 0 ? v sd , source ? to ? drain voltage (volts) figure 8. resistive switching time variation vs. gate resistance ? i s , source current (amps) v gs = 0 v figure 9. diode forward voltage vs. current 1.1 0.6 0.3 r g , gate resistance (ohms) 1 10 100 100 1 t, time (ns) v dd = ? 5 v i d = ? 10 ma v gs = ? 4.5 v t r t d(on) 1000 t f t d(off) 0.2 0.4 0.7 0.5 10 0.9 0.8 125 c t j = 150 c 25 c ? 40 c ? drain ? to ? source voltage (v) 0 5 10 15 20 30 0 2.5 5 7.5 10 12.5 15 t j = 25 c v gs = 0 v c iss c rss c oss c, capacitance (pf) 25 17.5 20 1.0
ntk3142p http://onsemi.com 5 package dimensions style 3: pin 1. anode 2. anode 3. cathode sot ? 723 case 631aa ? 01 issue d dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.21 0.27 b1 0.25 0.31 0.37 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l e notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. d b1 e b e a l c h ? y ? ? x ? x 0.08 y 2x e 1 2 3 l2 0.15 0.20 0.25 0.29 ref 3x l2 3x 1 2x top view bottom view side view *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* recommended dimensions: millimeters 0.40 1.50 2x package outline 0.27 2x 0.52 3x 0.36 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ntk3142p/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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