a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 c symbol test conditions minimum typical maximum units bv cbo i c = 1.0 ma 45 v bv cer i c = 1.0 ma 45 v bv ebo i e = 1.0 ma 3.5 v i ces v ce = 30 v 0.5 ma h fe v ce = 5 v i c = 100 ma 10 150 --- p out p g c v cc = 30 v p in = 0.3 w f = 2700 to 3100 mhz pulse width = 100 s duty cycle = 10% 1.0 5.2 27 w db % npn rf power transistor MS2601 description: the asi MS2601 is common base device designed for pulsed s-band radar amplifier applications up to 3.1 ghz. features include: ? ? ? ? input/output matching ? gold metallization ? ? ? ? emitter ballasting maximum ratings i c 0.45 a v cc 34 v p diss 11.5 w @ t c = 25 c t j -65 c to+200 c t stg -65 c to+200 c jc 13.0 c/w package style 400 x 400 2nl flg 1 = collector 2 & 4 = base 3 = emitter 1 2 4 3
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