? ? 2001 fairchild semiconductor corporation ds300281 5/24/01 1 of 4 www.fairchildsemi.com phototransistor optical interrupter switch + e+ d 2 0.129 (3.3) 0.119 (3.0) 0.433 (11.0) 0.422 (10.7) 0.315 (8.0) 0.110 (2.8) 0.091 (2.3) 1 3 4 0.020 (0.51) (sq) 0.472 (12.0) 0.457 (11.6) 0.249 (6.35) 0.243 (6.15) 0.39 (1.00) 0.34 (0.85) 0.103 (2.60) nom 0.125 (3.2) 0.119 (3.0) ? 0.133 (3.4) ? 0.126 (3.2) (2x) 0.755 (19.2) 0.745 (18.9) l c c l l c optical c l 0.972 (24.7) 0.957 (24.3) .295 (7.5) .272 (6.9) pin 1 anode pin 2 cathode pin 3 collector pin 4 emitter package dimensions features opaque housing low cost 0.035? apertures european ?pro electron? registered description the CNY28 is a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. the gap in the housing provides a means of interrupting the signal with tape, cards, shaft encoders or other opaque material, switching the ou tput from an ?on? to an ?off? state. 4 3 1 2 schematic CNY28 notes: 1. dimensions for all drawings are in inches (mm). 2. tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified.
parameter test conditions symbol min typ max units input (emitter) forward voltage i f = 10 ma v f ?? 1.7 v reverse leakage current v r = 2 v i r ?? 10 a output (sensor) emitter-collector breakdown i e = 100 ?, e e = 0 bv eco 5.0 ?? v collector-emitter breakdown i c = 10 ma, e e = 0 bv ceo 30 ?? v collector-emitter leakage v ce = 10 v, e e = 0 i ceo ?? 100 na coupled collector current i f = 20 ma, v ce = 10 v i c(on) 0.20 ?? ma collector emitter i f = 20 ma, i c = 25 ? v ce (sat) ?? 0.40 v saturation voltage turn-on time i f = 30 ma, v cc = 5 v, r l = 2.5 k 1 t on ? 5 ? ? turn-off time i f = 30 ma, v cc = 5 v, r l = 2.5 k 1 t off ? 5 ? ? electrical / optical characteristics (t a = 25 c) www.fairchildsemi.com 2 of 4 5/24/01 ds300281 CNY28 parameter symbol rating units operating temperature t opr -55 to +85 c storage temperature t stg - 55 to +85 c soldering temperature (iron) (2,3,4) t sol-i 240 for 5 sec c soldering temperature (flow) (2,3) t sol-f 260 for 10 sec c input (emitter) continuous forward current i f 50 ma reverse voltage v r 6v power dissipation (1) p d 100 mw output (sensor) collector-emitter voltage v ceo 30 v emitter- collector voltage v eco 4.5 v collector current i c 20 ma power dissipation (1) p d 150 mw absolute maximum ratings (t a = 25 c unless otherwise specified) phototransistor optical interrupter switch notes: 1. derate power dissipation linearly 1.67 mw/ c above 25 c. 2. rma flux is recommended. 3. methanol or isopropyl alcohols are recommended as cleaning agents. 4. soldering iron 1/16 ? (1.6mm) from housing.
1 2 4 6 8 10 20 40 60 80 100 200 -55 -40 0.1 0.2 0.6 0.8 1.0 0.4 -20 0 20406080100 400 600 1000 0.01 0.02 0.04 0.06 0.08 0.1 0.2 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10.0 i f - input current (ma) i ce(on) - normalized output current i ce(on) - normalized output current fig. 1 output current vs. input current t a - temperature (?c) fig. 2 output current vs. temperature normalized to: i f = 20 ma v ce = 5 v pulsed pw = 100 ? prr = 100 pps i f = 60 ma i f = 10 ma i f = 5 ma i f = 30 ma i f = 20 ma 2.0 6.0 8.0 10.0 4.0 normalized to: i f = 20 ma, v ce = 5 v, t a = 25?c input pulsed i f = 100 ma i r - normalized leakage current t a - temperature (?c) fig. 5 normalized leakage current vs. ambient temperature (emitter) 0.1 1.0 10 1 10 2 10 3 25 50 75 100 normalized to: v r = 5 v t a = 25?c 0.1 1.0 10 1 10 2 10 3 i ceo - normalized dark current -50 -25 0 25 50 75 100 0,6 0,8 1.0 2.0 3.0 t a - temperature (?c) v ce - normalized fig. 3 saturation voltage vs. ambient temperature 25 50 75 100 t a - temperature (?c) fig. 4 normalized dark current vs. ambient temperature (detector) normalized to: v ce = 25 v t a = 25?c normalized to: i c = 1.8 ma t a = 25?c i f 30 ma pulsed pw = 100 ?, prr = 100 pps v ce = 25 v v ce = 10 v i c = 3.6 ma i f 60 ma i c = 0.9 ma i f 15 ma i c = 1.8 ma i f 30 ma i c = 1.8 ma i f 20 ma typical performance curves CNY28 phototransistor optical interrupter switch ds300281 5/24/01 3 of 4 www.fairchildsemi.com
i ce (on) - normalized output current d = distance (mm) t on and t off normalized to 2.5 k 1 r l - load resistance ( 1 ) 0.45 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 3.0 4.0 4.5 2k 3k 4k 5k 6k 7k 8k 9k 10k t on t off v cc = 5 v i f = 75 a r l pw = 300 s prr = 100 pps normalized to: rl = 2.5 k 1 i f + v cc r l fig. 6 switching time vs. load resistance fig. 7 output current vs. distance 0 0.0001 0.001 0.01 0.1 1.00 246810 78.7 157.5 236.2 315 393.7 + e + d o black shield o d d black shield normalized to value with shield removed typical performance curves CNY28 phototransistor optical interrupter switch disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild s products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 4 of 4 5/24/01 ds300281
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