bfy420 ifag imm rpd d hir 1 of 4 v2, february 2011 hirel npn silicon rf transistor ? hirel discrete and microwave semiconductor ? for high gain low noise amplifiers ? for oscillators up to 10 ghz ? noise figure f = 1.1 db at 1.8 ghz outstanding gms = 21db at 1.8 ghz ? hermetically sealed microwave package ? transition frequency f t = 22 ghz ? sieget ? g rounded e mitter t ransistor - 25 ghz f t - line space qualified esa/scc detail spec. no.: 5611/008 type variant no. 02 esd : e lectro s tatic d ischarge sensitive device, observe handling precautions! type marking ordering code pin configuration 1 2 3 4 package bfy420 (ql) - see below c e b e micro - x (ql) quality level: p: professional quality h: high rel quality s: space quality es: esa space quality (see order instructions for ordering example) 1 2 3 4
bfy420 ifag imm rpd d hir 2 of 4 v2, february 2011 maximum ratings parameter symbol values unit collector - emitter voltage v ceo 4.5 v collector - base voltage v cbo 15 v emitter - base voltage v ebo 1.5 v collector current i c 35 ma base current i b 3.0 ma total power dissipation, t s ? 129c 1), 2) p tot 160 mw junction temperature t j 175 ? c operating temperature range t op - 65...+175 ? c storage tempera ture range t stg - 65...+175 ? c thermal resistance junction - soldering point 2) r th js < 285 k/w notes.: 1) at t s = + 129 c. for t s > + 129 c derating is required. 2) t s is measured on the collector lead at the soldering point to the pcb. electrical characteristics at t a =25c; unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector - base cutoff current v cb = 5 v, i e = 0 i cbo - - 30 na collector - emitter cutoff current 1.) v ce = 4.5 v, i b = 1.0a i cex - - 200 (t.b.d.) a emitter - base cuttoff current v eb = 1.5 v, i c = 0 i ebo - - 20 ? c = 5 ma, v ce = 1 v h fe 50 90 150 - notes: 1.) this test assures v(br) ce0 > 4.5v
bfy420 ifag imm rpd d hir 3 of 4 v2, february 2011 electrical ch aracteristics (continued) parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 30ma, v ce = 3 v, f = 2.0 ghz f t 20 22 - ghz collector - base capacitance v cb = 2 v, v be = vbe = 0, f = 1 mhz c cb - 0.14 0.9 pf collector - emitter capacitance v ce = 2 v, v be = vbe = 0, f = 1 mhz c ce - 0.46 0.85 pf emitter - base capacitance v eb = 0.5v, v cb = vcb = 0, f = 1 mhz c eb - 0.67 3.0 pf noise figure i c = 5 ma, v ce = 2 v, f = 1.8 ghz, z s = z sopt f - 1.1 1.7 db in sertion power gain i c = 20 ma, v ce = 2 v, f = 1.8 ghz z s = z l = 50 ? |s 21e | 2 14 18 - db power gain i c = 20 ma, v ce = 2 v, f = 1.8 ghz z s = z sopt , z l = z lopt gms 1.) - 21 - db 1db compression point i c = 20 ma, v ce = 2 v, f = 1.8 ghz z s = z sopt , z l = z lopt p - 1db - 12 - dbm notes.: 1) g s s ms ? 21 12
bfy420 ifag imm rpd d hir 4 of 4 v2, february 2011 micro - x package edition 20 11 - 0 2 published by infineon technologies ag 85579 neubiberg, germany ? infineon technologies ag 2011 all rights reserve d. attention please! the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non - infringement of intellectual property rights of an th ird party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical require ments components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express writ ten approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 1 2 3 4
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