CMPT5086 cmpt5087 surface mount pnp silicon transistor description: the central semiconductor CMPT5086 and cmpt5087 are pnp silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise. marking codes: CMPT5086: c2p cmpt5087: c2q maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 3.0 v continuous collector current i c 50 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics: (t a =25c unless otherwise noted) CMPT5086 cmpt5087 symbol test conditions min max min max units i cbo v cb =10v - 10 - 10 na i cbo v cb =35v - 50 - 50 na bv cbo i c =100a 50 - 50 - v bv ceo i c =1.0ma 50 - 50 - v bv ebo i e =100a 3.0 - 3.0 - v v ce(sat) i c =10ma, i b =1.0ma - 0.30 - 0.30 v v be(sat) i c =10ma, i b =1.0ma - 0.85 - 0.85 v h fe v ce =5.0v, i c =0.1ma 150 500 250 800 h fe v ce =5.0v, i c =1.0ma 150 - 250 - h fe v ce =5.0v, i c =10ma 150 - 250 - f t v ce =5.0v, i c =500a, f=20mhz 40 - 40 - mhz c ob v cb =5.0v, i e =0, f=1.0mhz - 4.0 - 4.0 pf h fe v ce =5.0v, i c =1.0ma, f=1.0khz 150 600 250 900 nf v ce =5.0v, i c =20ma, r s =10k, f=10hz to 15.7khz - 3.0 - 2.0 db nf v ce =5.0v, i c =100a, r s =3.0k, f=1.0khz - 3.0 - 2.0 db sot-23 case r5 (1-february 2010) www.centralsemi.com
CMPT5086 cmpt5087 surface mount pnp silicon transistor lead code: 1) base 2) emitter 3) collector marking codes: CMPT5086: c2p cmpt5087: c2q sot-23 case - mechanical outline www.centralsemi.com r5 (1-february 2010)
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