2sd669, 2sD669A silicon npn epitaxial application low frequency power amplifier complementary pair with 2sb649/a outline 1. emitter 2. collector 3. base to-126 mod 1 2 3
2sd669, 2sD669A 2 absolute maximum ratings (ta = 25?) ratings item symbol 2sd669 2sD669A unit collector to base voltage v cbo 180 180 v collector to emitter voltage v ceo 120 160 v emitter to base voltage v ebo 55v collector current i c 1.5 1.5 a collector peak current i c(peak) 33a collector power dissipation p c 11w p c * 1 20 20 w junction temperature tj 150 150 c storage temperature tstg ?5 to +150 ?5 to +150 c note: 1. value at t c = 25 c.
2sd669, 2sD669A 3 electrical characteristics (ta = 25?) 2sd669 2sD669A item symbol min typ max min typ max unit test conditions collector to base breakdown voltage v (br)cbo 180 180 v i c = 1 ma, i e = 0 collector to emitter breakdown voltage v (br)ceo 120 160 v i c = 10 ma, r be = emitter to base breakdown voltage v (br)ebo 5 5 vi e = 1 ma, i c = 0 collector cutoff current i cbo 1010 m av cb = 160 v, i e = 0 dc current transfer ratio h fe1 * 1 60 320 60 200 v ce = 5 v, i c = 150 ma* 2 h fe2 30 30 v ce = 5 v, i c = 500 ma* 2 collector to emitter saturation voltage v ce(sat) 1 1 v i c = 500 ma, i b = 50 ma* 2 base to emitter voltage v be 1.5 1.5 v v ce = 5 v, i c = 150 ma* 2 gain bandwidth product f t 140 140 mhz v ce = 5 v, i c = 150 ma* 2 collector output capacitance cob 14 14 pf v cb = 10 v, i e = 0, f = 1 mhz notes: 1. the 2sd669 and 2sD669A are grouped by h fe1 as follows. 2. pulse test. bc d 2sd669 60 to 120 100 to 200 160 to 320 2sD669A 60 to 120 100 to 200 maximum collector dissipation curve 30 20 10 0 50 100 150 case temperature t c ( c) collector power dissipation p c (w) 3 1.0 0.3 collector current i c (a) 0.01 0.03 0.1 330 10 300 1 100 collector to emitter voltage v ce (v) area of safe operation dc operation(t c = 25 c) (13.3 v, 1.5 a) (40 v, 0.5 a) (120 v, 0.04 a) (160 v, 0.02a) 2sD669A 2sd669
2sd669, 2sD669A 4 3.5 5.5 4.0 4.5 5.0 typical output characteristecs t c = 25 c p c = 20 w i b = 0 0.5 ma 1.0 1.5 2.0 2.5 3.0 1.0 0.8 0.6 0.4 0.2 01020 collector to emitter voltage v ce (v) 50 40 30 collector current i c (a) typical transfer characteristics 500 200 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 collector current i c (ma) base to emitter voltage v be (v) v ce = 5 v ta = 75 c 25 ?5 300 250 200 150 100 50 1 130 dc current transfer ratio h fe 300 100 10 3 collector current i c (ma) 1,000 3,000 dc current transfer ratio vs. collector current v ce = 5 v ta = 75 c ?5 25 1.2 1.0 0.8 0.6 0.4 0 0.2 1 3 30 300 10 100 1,000 collector to emitter saturation voltage vs. collector current collector current i c (ma) collector to emitter saturation voltage v ce(sat) (v) 25 ?5 t c = 75 c i c = 10 i b
2sd669, 2sD669A 5 1.2 1.0 0.8 0.6 0.4 0 0.2 1 3 30 300 10 100 1,000 base to emitter saturation voltage vs. collector current collector current i c (ma) base to emitter saturation voltage v be(sat) (v) i c = 10 i b 75 25 t c = ?5 c 240 200 160 120 80 40 0 10 300 gain bandwidth product f t (mhz) 1,000 100 30 collector current i c (ma) gain bandwidth product vs. collector current v ce = 5 v ta = 25 c 200 100 50 20 10 5 2 110 collector output capacitance c ob (pf) 50 20 5 2 collector to base voltage v cb (v) 100 collector output capacitance vs. collector to base voltage f = 1 mhz i e = 0
3.1 f +0.15 ?.1 8.0 0.5 2.3 0.3 1.1 3.7 0.7 11.0 0.5 15.6 0.5 0.8 2.29 0.5 2.29 0.5 0.55 1.2 2.7 0.4 120 120 120 hitachi code jedec eiaj weight (reference value) to-126 mod 0.67 g unit: mm
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