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inchange semiconductor product specification silicon npn power transistors pmd16k60/80/100 description ? with to-3 package ? high dc current gain ? darlington applications ? designed for use in power switching application. pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit pmd16k60 60 pmd16k80 80 v cbo collector-base voltage PMD16K100 open emitter 100 v pmd16k60 60 pmd16k80 80 v ceo collector-emitter voltage PMD16K100 open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 20 a i cm collector current(peak) 40 a i b base current 0.5 a p d power dissipation t c =25 ?? 200 w t j max. operating junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 0.875 ?? /w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors pmd16k60/80/100 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit pmd16k60 60 pmd16k80 80 v (br)ceo collector-emitter breakdown voltage PMD16K100 i c =0.1a ; i b =0 100 v v cesat collector-emitter saturation voltage i c =10a ;i b =40ma 2.0 v v besat base-emitter saturation voltage i c =10a ;i b =40ma 2.8 v v be base-emitter on voltage i c =10a ; v ce =3v 2.8 v h fe dc current gain i c =10a ; v ce =3v 1000 20000 i cer collector cut-off current v ce =rated v ceo ; r be = |? t c =150 ?? 1.0 5.0 ma i ebo emitter cut-off current v eb =5v; i c =0 2.0 ma f t transition frequency i c =7a ; v ce =3v;f=1.0khz 4.0 mhz c ob output capacitance i e =0 ; v cb =10v;f=1.0mhz 400 pf
inchange semiconductor product specification 3 silicon npn power transistors pmd16k60/80/100 package outline fig.2 outline dimensions ?? inchange semiconductor

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Price & Availability of PMD16K100

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD16K100 07R8806	Solid State Devices Inc (SSDI)	Bjt, Npn, 80V, To-3; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:100V; Power Dissipation Pd:225W; Dc Collector Current:20A; Rf Transistor Case:To-3; No. Of Pins:3Pins; Dc Current Gain Hfe:1000Hfe; Product Range:- Rohs Compliant: Yes \|Solid State PMD16K100		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD16K100 2383-PMD16K100-ND	Solid State Inc	TRANS NPN DARL 100V 20A TO3		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD16K100 70911436	Solid State Manufacturing	NPN-SILICON 20Amp Darlington TO-3 \| Solid State Manufacturing PMD16K100	10: USD4.1 50: USD3.9 100: USD3.69 200: USD3.49	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD16K100	Solid State Devices Inc (SSDI)			52

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD16K100	TDK-Lambda Corporation	Bipolar Junction Transistor, Darlington, NPN Type, TO-3	5: USD9 1: USD12	7
PMD16K100		Bipolar Junction Transistor, Darlington, NPN Type, TO-3	1: USD12	1
PMD16K100	TDK-Lambda Corporation	Bipolar Junction Transistor, Darlington, NPN Type, TO-3	6: USD3.435 2: USD4.58 1: USD6.87	14
PMD16K100	Solid State Devices Inc (SSDI)	Bipolar Junction Transistor, Darlington, NPN Type, TO-3	15: USD5 5: USD5.5 1: USD7.5	41
PMD16K100	Lamb Industries	Bipolar Junction Transistor, Darlington, NPN Type, TO-3	7: USD12 3: USD12.6 1: USD13.5	15

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD16K100	MFG UPON REQUEST			3

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