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| inchange semiconductor product specification silicon npn power transistors 2N5612A description ? with to-66 package ? excellent safe operating area ? low collector saturation voltage applications ? for general-purpose amplifier ; and switching applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a p d total power dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 4.37 ?? /w fig.1 simplified outline (to-66) and symbol ?? inchange semiconductor
inchange semiconductor product specification 2 silicon npn power transistors 2N5612A characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =50ma ;i b =0 100 v v cesat collector-emitter saturation voltage i c =1a; i b =0.1a 0.5 v v be base-emitter on voltage i c =2.5a ; v ce =5v 1.5 v i cbo collector cut-off current v cb =rated v cbo ; i e =0 0.1 ma i ceo collector cut-off current v ce = rated v ceo ,i b =0 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe dc current gain i c =2.5a ; v ce =5v 30 150 f t transition frequency i c =0.5a ; v ce =10v 60 mhz ?? inchange semiconductor inchange semiconductor product specification 3 silicon npn power transistors 2N5612A package outline fig.2 outline dimensions ?? inchange semiconductor |
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