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| inchange semiconductor isc product specification isc silicon pnp power transistor BD738 description dc current gain - : h fe = 40(min.)@ i c = - 20ma collector-emitter breakdown voltage- : v (br)ceo = -45v(min.) complement to type bd737 applications designed for amplifier and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -45 v v ceo collector-emitter voltage -45 v v ebo emitter-base voltage -5 v i c collector current-continuous -4 a i cm collector current-peak -7 a i b b base current-continuous -1 a collector power dissipation @ t a =25 2 p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor BD738 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = -30ma; i b = 0 -45 v v (br)cbo collector-base breakdown voltage i c = -0.1ma; i e = 0 -45 v v (br)ebo emitter-base breakdown voltage i e = -1ma; i c = 0 -5 v v ce( sat ) collector-emitter saturation voltage i c = -2a; i b = -0.2a b -0.6 v v be( on ) base-emitter on voltage i c = -2a; v ce = -1v -1.1 v i ces collector cutoff current v ce = -45v; v be = 0 -0.2 ma h fe-1 dc current gain i c = -20ma; v ce = -4v 40 h fe-2 dc current gain i c = -2a; v ce = -1v 40 isc website www.iscsemi.cn 2 www.iscsemi.cn |
Price & Availability of BD738
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