SIGC54T60R3 edited by in fineon technologies ai ps dd cls , l7581a , edition 2 , 27 . 0 1 .200 5 igbt 3 chip this chip is used for: power module features: 6 00v trench & field stop technology low v ce(sat) low turn - off losses short tail current positive temperature coefficient easy paralleling applications: drives g c e chip type v ce i cn die siz e package ordering code sigc54 t 6 0 r3 6 00v 100 a 5.97 x 8.97 mm 2 sawn on foil q67050 - a4341 - a101 mechanical parameter: raster size 5.97 x 8.97 emitter pad size ( 2.489 x 1.767 ) x 4 ( 2.789 x 1.995 ) x 4 gate pad size 1. 615 x 0.817 mm 2 area total / a ctive 53.6 / 4 0 mm 2 thickness 70 m wafer size 150 mm flat position 9 0 deg max. possible chips per wafer 245 pcs passivation frontside p hotoimide emitter metallization 3200 nm alsicu collector metallization 1400 nm ni ag ? system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, <500m reject ink d ot s ize ? 0.65mm ; max 1.2mm recommended s torage e nvironment store in original container, in dry nitrogen, < 6 month at an ambient temperatur e of 23c
SIGC54T60R3 edited by in fineon technologies ai ps dd cls , l7581a , edition 2 , 27 . 0 1 .200 5 maximum ratings : parameter symbol value unit collector - emitter voltage , t j = 25 c v ce 600 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 300 a gate emitter volt age v ge 20 v operating junction and storage temperature t j , t stg - 40 ... +1 75 c tvj = 150c 6 sc data, v ge = 15v , v cc = 360v tvj = 25 c t p 8 s 1 ) depending on thermal properties of assembly static characteristics (tested on chip) , t j =25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit collector - emitter breakdown voltage v (br)ces v ge =0v , i c = 4 ma 600 collector - emitter saturation voltage v ce(sat) v ge =15v, i c =100 a 1. 05 1. 4 5 1. 85 gate - emitter threshold voltage v ge(th) i c =1600 a , v ge =v ce 5.0 5.8 6.5 v zero gate voltage collector current i ces v ce =6 00v , v ge =0v 5.1 a gate - emitter leakage current i ges v ce =0v , v ge =2 0v 600 na integrated gate resistor r gint 2 w electrical characteristics ( verified by design/characterization ): value parameter symbol conditions min. typ. max. unit input capacitance c iss 6160 output capacitance c oss 384 reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz 183 p f switc hing characteristics ( verified by design/characterization ), i nductive l oad value 2) parameter symbol conditions min. typ. max. unit turn - on delay time t d(on) 70 rise time t r 25 turn - off d elay time t d(off) 260 fall time t f t j =125 c v cc =3 00v, i c =100 a, v ge = - 15/15v, r g = 3.3 w 60 n s 2 ) values also influenced by parasitic l - and c - in measurement and package.
SIGC54T60R3 edited by in fineon technologies ai ps dd cls , l7581a , edition 2 , 27 . 0 1 .200 5 chip drawing:
SIGC54T60R3 edited by in fineon technologies ai ps dd cls , l7581a , edition 2 , 27 . 0 1 .200 5 further electrical characteristics: this chip data sheet refers to the device data sheet description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag , bereich kommunikation st. - martin - st rasse 53, d - 81541 mnchen ? infineon technologies ag 2004 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to tech nical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information f or further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical require ments components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express writ ten approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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