tm april 2006 FDD8451 n-channel powertrench ? mosfet ?2006 fairchild semiconductor corporation FDD8451 rev. b www.fairchildsemi.com 1 FDD8451 n-channel powertrench ? mosfet 40v, 28a, 24m ? features ? max r ds(on) = 24m ? at v gs = 10v, i d = 9a ? max r ds(on) = 30m ? at v gs = 4.5v, i d = 7a ? low gate charge ? fast switching ? high performance trench techno logy for extremely low r ds(on) ? rohs compliant general description this n-channel mosfet has been designed specifically to improve the overall efficien cy of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, fast switching speed and extremely low r ds(on) . application ? dc/dc converter ? backlight inverter mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 40 v v gs gate to source voltage 20 v i d drain current -continuous @t c =25c 28 a -continuous @t a =25c 9 -pulsed (note 1) 78 e as single pulse avalanche energy (note 2) 20 mj p d power dissipation 37 w t j , t stg operating and storage temperature -55 to 150 c r jc thermal resistance, junction to case 4.1 c/w r ja thermal resistance, junction to ambient 40 c/w r ja thermal resistance, junction to ambient 96 c/w device marking device package reel size tape width quantity FDD8451 FDD8451 d-pak(to-252) 13?? 12mm 2500 units d g s l e a d f r e e m t a e l n t i o m p e n i
FDD8451 n-channel powertrench ? mosfet FDD8451 rev. b www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0v 40 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c 33.5 mv/ c i dss zero gate voltage drain current v ds = 32v, v gs = 0v 1 p a i gss gate to source leakage current v gs = 20v, v ds = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 1 1.7 3 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c -5.7 mv/ c r ds(on) drain to source on resistance v gs = 10v, i d = 9a 19 24 m : v gs = 4.5v, i d = 7a 23 30 v gs = 10v, i d = 9a t j = 150 c 32 41 g fs forward transcondductance v ds = 5 v , i d = 9a 29 s dynamic characteristics c iss input capacitance v ds = 20v, v gs = 0v, f = 1mhz 742 990 pf c oss output capacitance 112 150 pf c rss reverse transfer capacitance 72 110 pf r g gate resistance f = 1mhz 1.1 : switching characteristics t d(on) turn-on delay time v dd = 20v, i d = 1a v gs = 10v, r gs = 6 : 7 14 ns t r rise time 2 10 ns t d(off) turn-off delay time 19 34 ns t f fall time 5 10 ns q g total gate charge at 10v v ds = 20v, i d = 9a v gs = 10v 14 20 nc q g total gate charge at 5v 7.7 11 nc q gs gate to source gate charge 2.3 nc q gd gate to drain ?miller?charge 3.2 nc drain-source diode characteristics v sd source to drain diode forward voltage v gs = 0v, i s = 9a 0.87 1.2 v t rr reverse recovery time i f = 9a, di/dt = 100a/ p s 25 38 ns q rr reverse recovery charge i f = 9a, di/dt = 100a/ p s 19 29 nc notes: 1: pulse time < 30 0 p s, duty cycle = 2%. 2: starting t j = 25 o c, l = 0.1mh, i as = 20a ,v dd = 36v, v gs = 10v.
FDD8451 n-channel powertrench ? mosfet FDD8451 rev. b www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 01234 0 10 20 30 40 50 60 pulse duration = 80 p s duty cycle = 0.5%max v gs = 4v v gs = 3v v gs = 3.5v v gs = 4.5v v gs = 10v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. normalized 0 102030405060 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) v gs = 10v v gs = 5v v gs = 4v v gs = 3.5v v gs = 3v on-resistance vs drain current and gate voltage figure 3. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i d = 9a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c) normalized on resistance vs junction temperature figure 4. 246810 0 40 80 120 160 pulse duration = 80 p s duty cycle = 0.5%max t j = 175 o c t j = 25 o c i d = 10a r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage (v) on-resistance vs gate to source voltage figure 5. transfer characteristics 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 175 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1e-3 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 175 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) source to drain diode forward voltage vs source current
FDD8451 n-channel powertrench ? mosfet FDD8451 rev. b www.fairchildsemi.com 4 figure 7. 0481216 0 2 4 6 8 10 v dd = 25v v dd = 15v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 20v gate charge characteristics figure 8. 0.1 1 10 10 100 1000 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 40 3000 capacitance vs drain to source voltage figure 9. 1e-3 0.01 0.1 1 10 100 1 10 100 t j = 25 o c i as , avalanche current(a) t av , time in avalanche(ms) t j = 125 o c t j = 150 o c unclamped inductive switching capability figure 10. 40 60 80 100 120 140 160 0 5 10 15 20 25 30 v gs = 10v i d , drain current (a) t c , case temperature ( o c ) 175 r t jc = 4.1 o c/w v gs =4.5v maximum continuous drain current vs case temperature figure 11. 110 0.1 1 10 100 100us dc 100ms 10ms 1ms i d , drain current (a) v ds , drain-source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c 80 limited by package forward bias safe operating area figure 12. single 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 10000 v gs = 10v single pulse p ( pk ) , peak transient power (w) t, pulse width (s) t c = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 175 t c ? 150 ----------------------- pulse maximum power dissipation typical characteristics t j = 25c unless otherwise noted
FDD8451 n-channel powertrench ? mosfet FDD8451 rev. b www.fairchildsemi.com 5 figure 13. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 duty cycle-descending order 0.005 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t jc x r t jc + t c typical characteristics t j = 25c unless otherwise noted
FDD8451 rev. b www.fairchildsemi.com 6 FDD8451 n-channel powertrench ? mosfet rev. i19 trademarks the following are registered and unregister ed trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to m ake changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its pat ent rights, nor the rights of others. these specifications do not expand the terms of fa irchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sys tems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first produc tion this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
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