vishay byw82 to byw86 document number 86051 rev. 5, 07-jan-03 vishay semiconductors www.vishay.com 1 949588 standard avalanche sinterglass diode \ features ? glass passivated junction hermetically sealed package controlled avalanche characteristics low reverse current high surge current loading applications rectification, general purpose mechanical data case: sintered glass case, sod 64 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: 860 mg, (max. 1000 mg) parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation package byw82 v r = 200 v; i fav = 3 a sod64 byw83 v r = 400 v; i fav = 3 a sod64 BYW84 v r = 600 v; i fav = 3 a sod64 byw85 v r = 800 v; i fav = 3 a sod64 byw86 v r = 1000 v; i fav = 3 a sod64 parameter te s t c o n d i t i o n sub type symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics byw82 v r = v rrm 200 v see electrical characteristics byw83 v r = v rrm 400 v see electrical characteristics BYW84 v r = v rrm 600 v see electrical characteristics byw85 v r = v rrm 800 v see electrical characteristics byw86 v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sinewave i fsm 100 a repetitive peak forward current i frm 18 a average forward current i fav 3 a pulse avalanche peak power t p = 20 s, half sine wave, t j = 175 c p r 1000 w
www.vishay.com 2 document number 86051 rev. 5, 07-jan-03 vishay byw82 to byw86 vishay semiconductors maximum thermal resistance t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics (t amb = 25 c unless otherwise specified) pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r = 1 a, t j = 175 c e r 20 mj i 2 *t-rating i 2 *t 40 a 2 *s junction and storage temperature range t j = t stg - 55 to +175 c parameter test condition sub type symbol value unit junction ambient l = 10 mm, t l = constant r thja 25 k/w on pc board with spacing 25mm r thja 70 k/w parameter test condition sub type symbol min ty p. max unit forward voltage i f = 3 a v f 1.0 v reverse current v r = v rrm i r 0.1 1 a v r = v rrm , t j = 100 c i r 5 10 a breakdown voltage i r = 100 a, t p /t = 0.01, t p = 0.3 ms v (br) 1600 v diode capacitance v r = 4 v, f = 1 mhz c d 40 60 pf reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr 2 4 s i f = 1 a, d i /d t = 5 a/ s, v r = 50 v t rr 3 6 s reverse recovery charge i f = 1 a, d i /d t = 5 a/ s q rr 6 10 c parameter test condition sub type symbol value unit figure 1. max. thermal resistance vs. lead length 0 5 10 15 25 0 10 20 30 40 r ? therm. resist. junction / ambient ( k/w ) thja l ? lead length ( mm ) 30 94 9563 20 ll t l =constant figure 2. forward current vs. forward voltage i ? forward current ( a) 0.001 0.010 0.100 1.000 10.000 100.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f ? forward voltage ( v ) 16360 f t j =25 c t j =175 c
vishay byw82 to byw86 document number 86051 rev. 5, 07-jan-03 vishay semiconductors www.vishay.com 3 figure 3. max. average forward cu rrent vs. ambient temperature figure 4. reverse current vs . junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 20 40 60 80 100 120 140 160 180 t amb ? ambient temperature ( c ) 16361 i ? average forward current ( a ) fav v r =v rrm half sinewave r thja =25k/w l=10mm r thja =70k/w pcb: d=25mm 1 10 100 1000 25 50 75 100 125 150 175 t j ? junction temperature ( c ) 16362 v r = v rrm i ? reverse current ( a ) r figure 5. max. reverse power dissipation vs. junction temperature figure 6. diode capacitance vs. reverse voltage 0 50 100 150 200 250 300 350 25 50 75 100 125 150 175 t j ? junction temperature ( c ) 16363 v r = v rrm p ? reverse power dissipation ( mw ) r p r ?limit @100%v r p r ?limit @80%v r 0 10 20 30 40 50 60 70 80 90 100 0.1 1.0 10.0 100.0 v r ? reverse voltage ( v ) 16364 c ? diode capacitance ( pf ) d f=1mhz 1 10 100 1000 z ? thermal resistance for pulse cond. (k/ w thp t p ? pulse length ( s ) 94 9568 i frm ? repetitive peak forward current ( a ) 10 ?4 10 ?3 10 ?2 10 ?1 10 0 10 1 10 ?1 10 0 10 1 t p /t=0.05 v rrm =1000v r thja =70k/w t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.01 t amb =25 c 45 c 70 c 100 c 60 c t p /t=0.02 figure 7. thermal response
www.vishay.com 4 document number 86051 rev. 5, 07-jan-03 vishay byw82 to byw86 vishay semiconductors package dimensions in mm cathode identification ? 4.3 max. ? 1.35 max. 4.2 max. sintered glass case sod 64 weight max. 1.0g technical drawings according to din specifications 94 9587 26 min. 26 min.
vishay byw82 to byw86 document number 86051 rev. 5, 07-jan-03 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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