savantic semiconductor product specification silicon npn power transistors BUY49P d escription with to-126 package high breakdown voltage:v c eo =200v(min) applications for high voltage,medium current switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 250 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 6 v i c collector current 3 a i cm collector current-peak 5 a p t total power dissipation ta 1 25 15 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 8.33 /w
savantic semiconductor product specification 2 silicon npn power transistors BUY49P characteristics tj=25 unles otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =20ma ;i b =0 200 v v ebo emitter-base breakdown voltage i e =1ma ;i c =0 6 v cbo collector-base breakdown voltage i c =100a ;i e =0 250 v cesat collector-emitter saturation voltage i c =0.5a; i b =50ma 0.2 v v besat base-emitter saturation voltage i c =0.5a; i b =50ma 1.1 v i cbo collector cut-off current v c b =200v; i e =0 0.1 a h fe-1 dc current gain i c =20ma ; v ce =2v 30 h fe-2 dc current gain i c =20ma ; v ce =5v 40 h fe-3 dc current gain i c =0.5ma ; v ce =5v 40 f t transition frequency i c =0.1a ; v ce =10v 30 mhz c ob collector outoput capacitance i e =0;f=1mhz ; v cb =10v 50 pf switching times resistive load t on turn-on time 0.8 s t off turn-off time v cc =20v ,i c =0.5a i b1 =-i b2 =50ma 2.5 s
savantic semiconductor product specification 3 silicon npn power transistors BUY49P package outline fig.2 outline dimensions
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