abb switzerland ltd, semiconductors reserves the right to change specifications without notice. v rsm = 4000 v i f(av)m = 4140 a i f(rms) = 6500 a i fsm = 4610 3 a v f0 = 0.905 v r f = 0.109 m w rectifier diode 5sdd 40h4000 doc. no. 5sya1176-00 march 05 very low on-state losses optimum power handling capability blocking maximum rated values 1) parameter symbol conditions value unit repetitive peak reverse voltage v rrm f = 50 hz, t p = 10ms, t j = -40...160c 4000 v non - repetitive peak reverse voltage v rsm f = 5 hz, t p = 10ms, t j = -40...160c 4000 v characteristic values parameter symbol conditions min typ max unit max. (reverse) leakage current i rrm v rrm , tj = 160c 100 ma mechanical data maximum rated values 1) parameter symbol conditions min typ max unit mounting force f m 45 50 55 kn acceleration a device unclamped 50 m/s 2 acceleration a device clamped 100 m/s 2 characteristic values parameter symbol conditions min typ max unit weight m 0.9 kg housing thickness h f m = 50 kn, t a = 25 c 25.5 26.5 mm surface creepage distance d s 40 mm air strike distance d a 20 mm 1) maximum rated values indicate limits beyond which damage to the device may occur
5sdd 40h4000 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1176-00 march 05 page 2 of 7 on-state maximum rated values 1) parameter symbol conditions min typ max unit max. average on-state current i f(av)m 50 hz, half sine wave, t c = 85 c 4140 a max. rms on-state current i f(rms) 6500 a max. peak non-repetitive surge current i fsm 4610 3 a limiting load integral i 2 t t p = 10 ms, t j = 160c, v r = 0 v 10.5810 6 a 2 s max. peak non-repetitive surge current i fsm 4910 3 a limiting load integral i 2 t t p = 8.3 ms, t j = 160c, v r = 0 v 10.0210 6 a 2 s characteristic values parameter symbol conditions min typ max unit on-state voltage v f i f = 4000 a, t j = 160c 1.310 v threshold voltage v (t0) 0.905 v slope resistance r t t j = 160c i t = 6000...19000 a 0.109 m w switching characteristic values parameter symbol conditions min typ max unit recovery charge q rr di f /dt = -30 a/s, v r = 100 v i frm = 2000 a, t j = 160c 4600 m as
5sdd 40h4000 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1176-00 march 05 page 3 of 7 thermal maximum rated values 1) parameter symbol conditions min typ max unit operating junction temperature range t vj -40 160 c storage temperature range t stg -40 160 c characteristic values parameter symbol conditions min typ max unit thermal resistance junction to case r th(j-c) double-side cooled f m = 45...55 kn 8 k/kw r th(j-c)a anode-side cooled f m = 45...55 kn 14.5 k/kw r th(j-c)c cathode-side cooled f m = 45...55 kn 18.0 k/kw thermal resistance case to heatsink r th(c-h) double-side cooled f m = 45...55 kn 2.5 k/kw r th(c-h) single-side cooled f m = 45...55 kn 5.0 k/kw analytical function for transient thermal impedance: ) e - (1 r = (t) z n 1 i t/ - i th c) - th(j ? = i t i 1 2 3 4 r th i (k/kw) 4.533 2.255 0.868 0.345 t i (s) 0.4406 0.1045 0.0092 0.0022 fig. 1 transient thermal impedance junction-to- case.
5sdd 40h4000 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1176-00 march 05 page 4 of 7 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 0 1 2 3 4 v f ( v ) i f ( a ) 160 c t j = 25 c fig. 2 max. on-state characteristics. 20 40 60 80 100 1 10 100 t ( ms ) i f s m ( k a ) 0 5 10 15 20 i 2 d t ( 1 0 6 a 2 s ) i fsm i 2 dt 0 10 20 30 40 50 1 10 100 number n of cycles at 50 hz i f s m ( k a ) v r = 0 v v r 0.5 v rrm fig. 3 surge forward current vs. pulse length. half sine wave, single pulse, v r = 0 v fig. 4 surge forward current vs. number of pulses. half sine wave, v r = 0 v
5sdd 40h4000 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1176-00 march 05 page 5 of 7 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 0 1000 2000 3000 4000 5000 i fav ( a ) p t ( w ) 120 180 dc y = 60 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 0 1000 2000 3000 4000 5000 i fav ( a ) p t ( w ) y = 30 60 90 120 180 270 dc fig. 5 forward power loss vs. average forward current, sine waveform, f = 50 hz fig. 6 forward power loss vs. average forward current, square waveform, f = 50 hz 60 80 100 120 140 160 0 1000 2000 3000 4000 5000 i fav ( a ) t c ( c ) 180 120 dc y = 60 60 80 100 120 140 160 0 1000 2000 3000 4000 5000 i fav ( a ) t c ( c ) 180 dc 270 120 90 60 y = 30 fig. 7 max. case temperature vs aver. forward current, sine waveform, f = 50 hz fig. 8 max. case temperature vs aver. forward current, square waveform, f = 50 hz
5sdd 40h4000 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1176-00 march 05 page 6 of 7 2000 3000 4000 5000 6000 7000 0 20 40 60 - di f /dt (a/s) q r r ( c ) maximum minimum average 100 200 300 400 500 0 20 40 60 - di f /dt (a/s) i r r m ( a ) max. avg. minimum fig. 9 reverse recovery charge vs. di f /dt, i f = 2000 a, v r = 100 v, t j = t jmax , limit values fig. 10 peak reverse recovery current vs. di f /dt, i f = 2000 a, v r = 100 v, t j = t jmax , limit values
5sdd 40h4000 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. abb switzerland ltd doc. no. 5sya1176-00 march 05 semiconductors fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abb.com/semiconductors fig. 11 outline drawing. all dimensions are in millimeters and represent nominal values unless stated otherwise. related application notes: doc. nr titel 5sya 2020 design of rc-snubbers for phase control applications 5sya 2029 designing large rectifiers with high power diodes 5sya 2036 recommendations regarding mechanical clamping of press pack high power semiconductors please refer to http://www.abb.com/semiconductors for actual versions.
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