solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com designer?s data sheet features: rugged construction with poly silicon gate low rds(on) a nd high transconductance excellent high temperature stability very fast switching speed fast recovery and superior dv/dt performance increased reverse energy capability low input and transfer capacitance for easy paralleling hermetically sealed tx, txv, an d space level screening available. consult factory. replaces rfg60p05e types SFF60P05M sff60p05z - 60 amp/ - 50 volts 33 m w p - channel power mosfet to - 254 (m) to - 254z (z) maximum ratings symbol value units drain - source voltage v ds - 50 v gate ? source voltage v gs + 20 v continuous drain current i d - 60 a operating & storage temperature t op & t stg - 55 to +150 oc thermal resistance, junction to case r q jc 0.8 oc/w total device power dissipation t c = 25oc t c = - 55oc p d 156 118 watts package outline: to - 254 (m) pin 1 pin 3 pin 2 package outline: to - 254z (z) pin 1 pin 2 pin 3 available with glass or ceramic seals. contact factory for details. note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: fp0045d doc
solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 177 3 ssdi@ssdi - power.com * www.ssdi - power.com SFF60P05M sff60p05z electrical characteristics 4 / symbol min typ max units drain to source breakdown voltage (v gs = 0v, i d = 250 m a) bv dss - 50 ?? ?? volts drain to source on state resistance (v gs = - 10v, i d = 60a) r ds(on) ?? ?? 0.033 w on state drain current (v ds > i d(on) x r ds(on) max, v gs = - 10v) r ds(on) ?? ?? ?? amps gate threshold voltage (v ds = v gs , i d = - 250 m a) v gs(th) - 2.0 ?? - 4.0 volts forward transconductance (v ds > i d(on) x r ds(on) max, i ds = 60% of rated i d ) g fs ?? ?? ?? s zero gate voltage drain current (v ds = max rated voltage, v gs = 0v) (v ds = 80% rated v ds , v gs = 0v) t a = 25 o c t a = 125 o c i dss ?? ?? ?? ?? 1 50 m a gate to source leakage (for gate to source leakage at rated v gs i gss ?? ?? ?? ?? - 100 100 m a total gate charge gate to source charge gate to drain charge v gs = - 10v v dd = 40v i d = 60a r l = 0.67 w q g q gs q gd ?? ?? ?? ?? ?? ?? 450 225 15 nc t (on) t d(on) t r ?? ?? ?? ?? 20 70 125 ?? ?? turn on delay time rise time turn off delay time fall time v dd = 50% rated v ds 50 % rated i d i g1 = i g2 = 2a r l = 0.83 w v gs(clamp) = - 10v/+0.6v t (off) t d(off) t f ?? ?? ?? ?? 65 20 125 ?? ?? ns diode forward voltage i s = rated i d v gs = 0v t j = 25oc v sd ?? ?? - 1.9 volts diode reverse re covery time i f = 10a di/dt = 100a/usec t rr q rr ?? ?? 140 ?? 200 ?? ns m c input capacitance output capacitance reverse transfer capacitance v gs = 0v v ds = - 25v f = 1 mhz c iss c oss c rss ?? ?? ?? 6000 1800 500 ?? ?? ?? pf available part numbers: sff6 0p05m, SFF60P05Mub, SFF60P05Mdb; sff60p05z, sff60p05zub, sff60p05zdb pin assignment (standard) package drain source gate to - 254 (m) pin 1 pin 2 pin 3 to - 254z (z) pin 1 pin 2 pin 3
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