inchange semiconductor isc product specification isc silicon npn power transistor MJ424 description high collector-emitter voltage-v cex = 700v dc current gain-h fe =10(min)@ i c =2.5a low collector-emitter saturation voltage- v ce(sat) =0.8vdc(max)@i c =1adc applications designed for use in high voltage ap plications in deflection circuits, swithing regulators , inverters, and tine operated amplifiers. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 700 v v ceo collector-emitter voltage 350 v v ebo emitter-base voltage 5 v i c collector current-continuous 5 a i b b base current-continuous 2 a p c collector power dissipation@t c =25 100 w t j junction temperature 150 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.75 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor MJ424 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 350 v v ce (sat) collector-emitter saturation voltage i c = 1a; i b = 0.1a b 0.8 v v be (sat) base-emitter saturation voltage i c = 1a; i b = 0.1a b 1.2 v i ceo collector cutoff current v ce =350v; v eb(off) =1.5v 0.25 ma i cex collector cutoff current v ce =700v; v eb(off) =1.5v 0.5 ma i ebo emitter cutoff current v eb =6v; i c = 0 5.0 ma h fe-1 dc current gain i c = 1a; v ce =5v 30 90 h fe-2 dc current gain i c = 2.5a; v ce =5v 10 f t current-gain?bandwidth product i c = 0.2a; v ce =10v; f=1.0mhz 2.5 mhz isc website www.iscsemi.cn
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