inchange semiconductor isc product specification isc silicon npn power transistor MJE51T description collector-emitter sustaining voltage- : v ceo(sus) = 250v(min) applications designed for high voltage inverters, switching regulators and line operated amplifier applic ations. especially well suited for switching power supply applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 350 v v ceo collector-emitter voltage 250 v v ebo emitter-base voltage 6 v i c collector current-continuous 5 a i cm collector current-peak 10 a i b b base current-continuous 2 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.56 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor MJE51T electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 25ma; i b = 0 250 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 2a b 2.0 v v be (on) base-emitter on voltage i c = 5a ; v ce = 10v 2.0 v i ceo collector cutoff current v ce = 150v; i b =0 1.0 ma i ces collector cutoff current v ce = 350v; v be = 0 1.0 ma i ebo emitter cutoff current v eb = 5v; i c =0 1.0 ma h fe-1 dc current gain i c = 0.3a ; v ce = 10v 30 h fe-2 dc current gain i c = 5a ; v ce = 10v 5 c ob output capacitance i e = 0 ; v cb = 10v; f test =0.1mhz 150 pf switching times t on turn-on time 0.5 s t off turn-off time i c = 2.5a , i b1 = -i b2 = 0.5a v be (off) = 5v; v cc = 125v 2.0 s isc website www.iscsemi.cn 2
|
