SSM6L13TU 2007-11-01 1 0.3-0.05 6 1.70.1 2.10.1 1.30.1 1 2 0.65 0.65 3 2.00.1 0.16-0.05 5 4 0.70.05 +0.1 +0.06 1.source1 2.gate1 3.drain2 4.source2 5.gate2 6.drain1 toshiba field-effect transistor silicon p / n channel mos type SSM6L13TU power management switch applications high-speed switching applications ? 1.8 v drive ? p?ch , n?ch 2?in?1 ? low on?resistance: pch r on = 460 m ? (max) (@v gs = ? 1.8 v) ? r on = 306 m ? (max) (@v gs = ? 2.5 v) ? : nch r on = 235 m ? (max) (@v gs = 1.8 v) ? r on = 178 m ? (max) (@v gs = 2.5 v) q1 absolute maximum ratings (ta = 25 c) characteristic symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gss 12 v dc i d 0.8 drain current pulse i dp 1.6 a q2 absolute maximum ratings (ta = 25 c) characteristic symbol rating unit drain-source voltage v ds ?20 v gate-source voltage v gss 8 v dc i d ?0.8 drain current pulse i dp ?1.6 a absolute maximum ratings (q1 , q2 common) (ta = 25 c) characteristic symbol rating unit drain power dissipation p d (note 1) 500 mw channel temperature t ch 150 c storage temperature range t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper ature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on an fr4 board (total dissipation) (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) marking equivalent circuit (top view) handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing , and containers and other objects that come into direct contact with devices should be made of antistatic materials. unit: mm uf6 jedec D jeita D toshiba 2-2t1b weight: 7 mg (typ.) q1 q2 654 123 6 kv 4 1 2 3 5
SSM6L13TU 2007-11-01 2 q1 electrical characteristics (ta = 25c) characteristic symbol test conditions min typ. max unit v (br) dss i d = 1 ma, v gs = 0 20 ? ? drain-source breakdown voltage v (br) dsx i d = 1 ma, v gs = ? 12 v 10 ? ? v drain cutoff current i dss v ds = 20 v, v gs = 0 ? ? 1 a gate leakage current i gss v gs = 12 v, v ds = 0 ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 1 ma 0.4 ? 1.0 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 0.6 a (note 2) 2.3 3.75 ? s i d = 0.6 a, v gs = 4.0 v (note 2) ? 116 143 i d = 0.4 a, v gs = 2.5 v (note 2) ? 134 178 drain-source on-resistance r ds (on) i d = 0.2 a, v gs = 1.8 v (note 2) ? 160 235 m input capacitance c iss v ds = 10 v, v gs = 0, f = 1 mhz ? 268 ? pf output capacitance c oss v ds = 10 v, v gs = 0, f = 1 mhz ? 44 ? pf reverse transfer capacitance c rss v ds = 10 v, v gs = 0, f = 1 mhz ? 34 ? pf turn-on time t on ? 9 ? switching time turn-off time t off v dd = 10 v, i d = 0.25 a, v gs = 0 to 2.5 v, r g = 4.7 ? 16 ? ns drain-source forward voltage v dsf i d = ? 0.8 a, v gs = 0 v (note 2) ? ? 0.8 ? 1.15 v note 2 : pulse test q2 electrical characteristics (ta = 25c) characteristic symbol test conditions min typ. max unit v (br) dss i d = ? 1 ma, v gs = 0 ? 20 ? ? drain-source breakdown voltage v (br) dsx i d = ? 1 ma, v gs = + 8 v ? 12 ? ? v drain cutoff current i dss v ds = ? 20 v, v gs = 0 ? ? ? 10 a gate leakage current i gss v gs = 8 v, v ds = 0 ? ? 1 a gate threshold voltage v th v ds = ? 3 v, i d = ? 1 ma ? 0.3 ? ? 1.0 v forward transfer admittance ? y fs ? v ds = ? 3 v, i d = ? 0.6 a (note 2) 1.5 2.5 ? s i d = ? 0.6 a, v gs = ? 4.0 v (note 2) ? 175 234 i d = ? 0.4 a, v gs = ? 2.5 v (note 2) ? 230 306 drain-source on-resistance r ds (on) i d = ? 0.1 a, v gs = ? 1.8 v (note 2) ? 300 460 m input capacitance c iss v ds = ? 10 v, v gs = 0, f = 1 mhz ? 250 ? pf output capacitance c oss v ds = ? 10 v, v gs = 0, f = 1 mhz ? 45 ? pf reverse transfer capacitance c rss v ds = ? 10 v, v gs = 0, f = 1 mhz ? 35 ? pf turn-on time t on ? 12 ? switching time turn-off time t off v dd = ? 10 v, i d = ? 0.25 a, v gs = 0 to ? 2.5 v, r g = 4.7 ? 18 ? ns drain-source forward voltage v dsf i d = 0.8 a, v gs = 0 v (note 2) ? 0.85 1.2 v note 2: pulse test
SSM6L13TU 2007-11-01 3 q1 switching time test circuit (a) test circuit (b) v in q2 switching time test circuit q1 precaution v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = 1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th, and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) take this into consideration when using the device. q2 precaution v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = ? 1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th, and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) take this into consideration when using the device. (c) v out v dd = 10 v r g = 4.7 d.u. < = 1% v in : t r , t f < 5 ns common source ta = 25 c v dd out in 2.5 v 0 10 s r g t f t on 90 % 10 % 2.5 v 0 v 10 % 90 % t off t r v dd v ds ( on ) v dd = - 10 v r g = 4.7 d.u. < = 1 % v in : t r , t f < 5 ns common source ta = 25 c in 0 ? 2.5 v 10 s v dd out r g r l (c) v out t on 90 % 10 % ?2.5 v 0 v 90 % 10 % t off t r t f v ds ( on ) v dd (b) v in (a) test circuit
SSM6L13TU 2007-11-01 4 q1 data i d - v gs 0.0001 0.001 0.01 0.1 1 10 012 gate-source voltage v gs (v) drain current i d (a) ta = 85 c 25 c - 25 c common source v ds = 3 v vth - ta 0 0.2 0.4 0.6 0.8 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 ambient temperature ta(c) gate threshold voltage vth(v) common source id = 1 ma vds = 3 v i d - v ds 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 drain-source voltage v ds (v) drain current i d (a) v gs = 1.2 v 1.5 1.8 2.54.010 common source ta = 25 c r ds (on) - i d 0 20 40 60 80 100 120 140 160 180 200 012345 drain current i d (a) drain-source on-resistance r ds (on) (m ? ) v gs = 4 v 2.5 v 1.8 v common source ta = 25 c r ds (on) - v gs 0 20 40 60 80 100 120 140 160 180 200 012345678910 gate-source voltage v gs (v) drain-source on-resistance r ds (on) (m ? ) id = 0.2 a 1 a 0.5 a common source ta = 25 c r ds (on) - ta 0 50 100 150 200 250 300 -60 -40 -20 0 20 40 60 80 100 120 140 160 ambient temperature ta( ) drain-source on-resistance r ds (on) (m ? ) v gs = 4 v , i d = 1 a 2.5 v , 0.5 a 1.8 v , 0.2 a common source
SSM6L13TU 2007-11-01 5 |yfs| - i d 0.1 1.0 10.0 -0.01 -0.1 -1 -10 drain current i d (a) forward transfer admittance |yfs| (s) common source vds = - 3 v ta = 25 c c - v ds 10 100 1000 0.1 1 10 100 drain-source voltage v ds (v) capacitance c (pf ) ciss coss crss common source vgs = 0 v f = 1 mhz ta = 25 c ta = 85 c 25 c - 25 c t - i d 1 10 100 1000 -0.01 -0.1 -1 -10 drain current i d (a) switching time t (ns) toff tr ton tf common source vdd = 10 v vgs = 0 to 2.5 v ta = 25 c i dr - v ds -0.001 -0.01 -0.1 -1 -10 0 0.2 0.4 0.6 0.8 1 drain-source voltage v ds (v) drain reverse current i dr (a) common source vgs = 0 v ta = 25 c ta = 85 c 25 c - 25 c
SSM6L13TU 2007-11-01 6 q2 data i d - v gs 0.0001 0.001 0.01 0.1 1 10 012 gate-source voltage v gs (v) drain current i d (a) ta = 85 c 25 c - 25 c common source vds = - 3 v vth - ta -0 -0.2 -0.4 -0.6 -0.8 -1 -60 -40 -20 0 20 40 60 80 100 120 140 160 ambient temperature ta(c) gate threshold voltage vth(v) common sour c e id = - 1 ma vds = - 3 v i d - v ds -0 -1 -2 -3 -4 -5 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 drain-source voltage v ds (v) drain current i d (a) vgs = - 1.2 - 1.5 - 1.8 - 2.5 - 4.0 - 10 common sour c e ta = 25 c r ds (on) - i d 0 50 100 150 200 250 300 350 400 -0 -1 -2 -3 -4 -5 drain current i d (a) drain-source on-resistance r ds (on) (m ? ) vgs = - 4 v - 2.5 v - 1.8 v common sour c e ta = 25 c r ds (on) - v gs 0 50 100 150 200 250 300 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 gate-source voltage v gs (v) drain-source on-resistance r ds (on) (m ? ) id = - 0.1 a - 0.8 a - 0.4 a common source ta = 25 c r ds (on) - ta 0 50 100 150 200 250 300 350 400 -60 -40 -20 0 20 40 60 80 100 120 140 160 ambient temperature ta( ) drain-source on-resistance r ds (on) (m ? ) vgs = - 4 v , id = - 0.8 a - 2.5 v , - 0.4 a - 1.8 v , - 0.1 a common source
SSM6L13TU 2007-11-01 7 |yfs| - i d 0.1 1.0 10.0 -0.01 -0.1 -1 -10 drain current i d (a) forward transfer admittance |yfs| (s) common source vds = - 3 v ta = 25 c p d - ta 0 200 400 600 800 1000 0 20406080100120140160 ambient temperature ta (c) drain power dissipation p d (mw) a a : mounted on an fr4 board (25.4mm25.4mm1.6mm) cu pad :25.4mm25.4mm b : mounted on a ceramic board (25.4mm25.4mm0.8mm) cu pad :25.4mm25.4mm b c - v ds 10 100 1000 0.1 1 10 100 drain-source voltage v ds (v) capacitance c (pf ) ciss coss crss common source vgs = 0 v f = 1 mhz ta = 25 c ta = 85 c 25 c - 25 c t - i d 1 10 100 1000 -0.01 -0.1 -1 -10 drain current i d (a) switching time t (ns) toff tr ton tf common source vdd = 10 v vgs = 0 to 2.5 v ta = 25 c i dr - v ds -0.001 -0.01 -0.1 -1 -10 0 0.2 0.4 0.6 0.8 1 drain-source voltage v ds (v) drain reverse current i dr (a) common source vgs = 0 v ta = 25 c ta = 85 c 25 c - 25 c rth - tw 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 pulse width tw (s) transient thermal impedance rth (c/w) sing le pulse a : mounted on an ceramic board ( 25.4mm 25.4mm 0.8mm) cu pad :25.4mm25.4mm b : mounted on a fr4 board ( 25.4mm 25.4mm 1.6mm) cu pad :25.4mm25.4mm c : m ounted on a fr4 board ( 25.4mm 25.4mm 1.6mm) cu pad :0.45mm 0.8mm 3 a b c q1 , q2 data
SSM6L13TU 2007-11-01 8 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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