inchange semiconductor isc product specification isc silicon npn power transistor 2SD2524 description high breakdown voltage- v cbo = 1700v (min) high switching speed low saturation voltage built-in damper diode applications designed for horizontal defle ction output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1700 v v ces collector-emitter voltage 1700 v v ebo emitter-base voltage 5 v i c collector current- continuous 8 a i cm collector current-peak 20 a i bm base current-peak 5 a collector power dissipation @ t c =25 100 p c collector power dissipation @ t a =25 3 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD2524 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e = 500ma ; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 6a; i b = 2a b 3.0 v v be (sat) base-emitter saturation voltage i c = 6a; i b = 2a b 1.5 v v cb = 1000v; i e = 0 50 a i cbo collector cutoff current v cb = 1700v; i e = 0 1.0 ma h fe dc current gain i c = 6a; v ce = 5v 4 10 v ecf c-e diode forward voltage i f = 8a 2.0 v f t current-gain?bandwidth product i c = 0.1a; v ce = 10v 3 mhz resistive load t s storage time 12 s t f fall time i c = 6a, i b( end ) = 2a, l leak = 5 h 0.8 s isc website www.iscsemi.cn 2
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